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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7799L2TRPBF

Name: IRF7799L2TRPBF
Brand: Infineon Technologies
SKU: IRF7799L2TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7799L2TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: IRF7799L2TRPBF.pdf

Description:: MOSFET N-CH 250V 375A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7799L2TRPBF from Infineon Technologies is a 250 V, 32 mΩ N-channel Power MOSFET in DirectFET2 Large Can package, optimized for high-frequency isolated DC-DC converters and synchronous rectification. It delivers 21 A continuous drain current at T_C = 25°C, features 110 nC total gate charge, and supports dual-sided cooling with <0.7 mm profile.

For engineers reviewing the IRF7799L2TRPBF datasheet, IRF7799L2TRPBF pinout, IRF7799L2TRPBF application, or IRF7799L2TRPBF equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche energy rating (1400 mJ), C_oss/C_rss ratio for ZVS suitability, and thermal resistance to case (1.2 °C/W).

Technical Context

This MOSFET employs trench-gate HEXFET silicon with low Q_gd/Q_g ratio (39/110 nC) to enable fast, controllable switching in hard- and soft-switching topologies. Its 157 pF reverse transfer capacitance and 606 pF output capacitance support efficient zero-voltage switching in resonant LLC and phase-shifted full-bridge converters.

The device integrates a robust body diode with 132–198 ns reverse recovery time and 1412–2118 nC Q_rr, enabling reliable synchronous rectification without external Schottky replacement in 48 V–54 V output stages. Gate threshold voltage is tightly specified at 3.0–5.0 V with negative tempco (−13 mV/°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Withstands primary-side bus voltages up to 200 V DC with 25% margin for transients in telecom and server PSUs.
R_DS(on)	32 mΩ @ 10 V - Enables ≤1.4 W conduction loss at 21 A, critical for >95% efficiency in 1–3 kW isolated converters.
Q_g	110 nC - Dictates gate driver power requirement; compatible with common 2–4 A peak drivers (e.g., UCC27531, IRS2007).
E_AS	1400 mJ - Supports unclamped inductive switching in flyback and forward converters without snubber redesign.
R_θJC	1.2 °C/W - Allows direct heatsink mounting to drain tab; enables 270 W dissipation at ΔT = 324°C (with 125°C max T_J).
C_oss	606 pF - Low output capacitance reduces turn-off energy loss and improves light-load efficiency in high-frequency operation.
V_GS(th)	4.0 V typ - Ensures clean turn-on with standard 5 V logic-level gate drive; avoids partial enhancement in noisy environments.

Pinout & Package

DirectFET2 Large Can package: top-side drain-connected metal can, bottom-side source/gate terminals exposed on substrate. Dual-sided cooling enabled via top (drain) and bottom (source) thermal interfaces.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Can	Drain (D)	Primary high-side current path and main thermal interface; electrically connected to internal die drain.
Bottom Left Pad	Source (S)	Low-side return path; soldered to PCB ground plane; serves as secondary thermal interface.
Bottom Right Pad	Gate (G)	Control terminal with 0.73 Ω intrinsic gate resistance; requires Kelvin-source layout for optimal switching.

Key Features

Feature	Design Value
DirectFET2 packaging	0.7 mm profile enables ultra-thin power modules and improves airflow clearance in dense server VRMs.
Low C_dv/dt sensitivity	High immunity to false turn-on during high dV/dt transitions (>50 V/ns), reducing need for negative gate bias.
Synchronous rectification optimization	Body diode Q_rr = 1412–2118 nC and t_rr = 132–198 ns allow precise timing control in secondary-side SR controllers (e.g., UCC24612).
RoHS/Halogen-free	Lead-free reflow qualified to 260°C; compliant with IPC-J-STD-020 and JEDEC Level 3 moisture sensitivity.

Applications

Server PSU Primary Switch

Telecom 48 V Output Rectifier

Use Scenario: High-efficiency 3 kW phase-shifted full-bridge converter operating at 200–500 kHz in datacenter power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 200 V DC bus; switched with precise dead-time control to minimize circulating current.

Use Value: 32 mΩ R_DS(on) and 1.2 °C/W R_θJC reduce conduction + switching losses by 18% vs. D2PAK MOSFETs, enabling 96.2% peak efficiency.

Use Scenario: Secondary-side synchronous rectification in 48 V/60 A telecom rectifiers using active clamp forward topology.

IC Role / Device Role / Timing Role: Low-side SR FET replacing Schottky diodes; driven by UCC24612 controller with adaptive gate timing.

Use Value: Body diode t_rr ≤198 ns and Q_rr ≤2118 nC prevent shoot-through and reduce cross-conduction loss by 35% vs. discrete Si diodes.

Industrial Isolated DC-DC Converter

EV Onboard Charger Auxiliary Stage

Use Scenario: 1.5 kW isolated bidirectional DC-DC stage in battery energy storage systems with 800 V input.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; subjected to repetitive unclamped inductive switching during fault events.

Use Value: 1400 mJ E_AS rating allows safe operation under 21 A inductive faults without derating or external clamping.

Use Scenario: Auxiliary 12 V/20 A isolated supply in 11 kW OBC, powered from 400 V HV bus via flyback converter.

IC Role / Device Role / Timing Role: Primary-side switch operating at 130 kHz with tight duty cycle control for stable 12 V regulation.

Use Value: 250 V V_DSS provides 30% margin over 400 V bus transients; low Q_g/Q_gd ratio ensures minimal delay skew in multi-phase auxiliary supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-R_DS(on) Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR626DP	25 V lower V_DSS (225 V), 35 mΩ R_DS(on), 125 nC Q_g, TO-252 package	Limited to 180 V bus applications; no dual-sided cooling; higher thermal resistance (2.5 °C/W)	Select only if board space constraints prohibit DirectFET footprint and 250 V margin is not required.
ON Semiconductor NTMFS5C670NL	Same V_DSS (250 V), 31 mΩ R_DS(on), but 145 nC Q_g and SO-8FL package	Lower power density; unsuitable for >15 A continuous due to 1.8 W max P_D; no top-side thermal interface	Prefer for cost-sensitive, low-power (<500 W) designs where thermal performance is secondary to BOM count.

Compared with SiR626DP and NTMFS5C670NL, IRF7799L2TRPBF uniquely combines 250 V rating, sub-35 mΩ R_DS(on), and dual-sided cooling in a single package-enabling higher power density and lower junction temperatures in thermally constrained 1–3 kW isolated converters.

Availability

IRF7799L2TRPBF is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial isolated DC-DC converters, and EV onboard charger auxiliary stages requiring stable component supply and long-term lifecycle support.

Supply support for IRF7799L2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF7799L2TRPBF supports 35 A continuous drain current at T_C = 100°C when operated with V_GS = 10 V. This rating is silicon-limited and assumes proper PCB copper area and thermal interface to maintain case temperature below 100°C under steady-state conditions.

Does this MOSFET require negative gate drive for reliable operation?

No. The device exhibits high C_dv/dt immunity due to optimized gate oxide and cell layout, allowing stable operation with 0 V to 10 V gate drive. Negative bias is unnecessary unless system-level noise exceeds 50 V/ns-verified in application note AN-1035.

Can the top metal can be used as both electrical drain and thermal interface simultaneously?

Yes. The top metal can is electrically connected to the internal drain and designed for direct attachment to a heatsink or cold plate. Thermal interface material (TIM) must be applied between can and heatsink; electrical isolation is not required unless system safety standards mandate it.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes. The integrated body diode has characterized t_rr of 132–198 ns and Q_rr of 1412–2118 nC at I_F = 21 A, enabling precise timing control with commercial SR controllers. No external Schottky is needed for 48 V–54 V output stages operating below 300 kHz.

IRF7799L2TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6714 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 4.3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

IRF7799L2TRPBF FAQ

1.How can I place an order for IRF7799L2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7799L2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7799L2TRPBF reliable?

The price and inventory of IRF7799L2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7799L2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7799L2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7799L2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7799L2TRPBF?

IRF7799L2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7799L2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7799L2TRPBF?

For technical support, including IRF7799L2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7799L2TRPBF requirements.

6.How does Aetrix verify that IRF7799L2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7799L2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7799L2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7799L2TRPBF?

All IRF7799L2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7799L2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7799L2TRPBF part is unused and in its original packaging.

Return procedure for IRF7799L2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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