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Infineon Technologies IRF7805QTRPBF
- Part No.:
- IRF7805QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7805QTRPBF.pdf
- Description:
- MOSFET N-CH 30V 13A 8-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:6,685
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Product details
Overview
IRF7805QTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V VDS, 11 mΩ RDS(on) at VGS = 10 V, 31 nC total gate charge, and 150°C maximum junction temperature. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF7805QTRPBF datasheet, IRF7805QTRPBF pinout, IRF7805QTRPBF application, or IRF7805QTRPBF equivalent, key selection criteria include low conduction loss at 7 A continuous drain current, fast switching (11.5 nC Qsw), robust body diode recovery (88 nC Qrr), and SO-8 thermal performance (RθJA = 50°C/W).
Technical Context
This HEXFET® Power MOSFET uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining high avalanche ruggedness. Its gate threshold voltage range (1.0–3.0 V) supports both 4.5 V and 10 V logic-level drive, and its 6.8 nC gate-to-drain charge enables controlled dV/dt during hard-switching.
The integrated body diode exhibits 1.2 V forward voltage at 7.0 A and 100°C, with reverse recovery optimized for synchronous buck topologies. Thermal design leverages the SO-8 package's 20°C/W junction-to-drain lead resistance for PCB copper pad heat spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) | 9.2–11 mΩ @ VGS = 10 V - Enables ≤0.55 W conduction loss at 7 A continuous current |
| Qg | 22–31 nC - Determines gate driver power requirement and turn-on timing control |
| Qsw | 8.2–11.5 nC - Governs switching energy loss during transition between on/off states |
| TJ max | 150°C - Supports operation in sealed enclosures or high-ambient industrial environments |
| Qrr | 88 nC - Quantifies reverse recovery charge affecting shoot-through risk in synchronous rectification |
| RθJA | 50°C/W - Specifies thermal rise above ambient on standard FR-4 with no heatsink |
Pinout & Package
IRF7805QTRPBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain paddle for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and is RoHS-compliant and MSL1-rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Five parallel internal drain connections tied to exposed thermal pad - primary current path and main heat sink interface |
| 6 | Gate (G) | Control terminal requiring ≥10 V for full enhancement; sensitive to ESD (±12 V absolute max) |
| 7, 8 | Source (S) | Two-source terminals providing low-inductance return path for channel current and body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 9.2 mΩ typ. at 10 V - reduces I²R losses by >35% vs. legacy SO-8 MOSFETs at 7 A |
| Enhanced avalanche rating | 100% tested repetitive avalanche - supports unclamped inductive switching in motor drives without snubbers |
| Logic-level compatible | VGS(th) = 1.0–3.0 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO |
| Fast body diode recovery | Qrr = 88 nC - minimizes cross-conduction loss when used as synchronous rectifier in buck converters |
| Thermal robustness | RθJL = 20°C/W - enables direct thermal coupling to PCB copper pour for passive cooling |
Applications
| DC-DC Synchronous Buck Converter | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V output power stage in infotainment head unit. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency. Use Value: 11 mΩ RDS(on) cuts conduction loss by 65% vs. 40 V/3 A Schottky, enabling >92% efficiency at 5 A load. | Use Scenario: Load switching for interior lighting, window lift, and mirror controls. IC Role / Device Role: High-current N-channel load switch with integrated protection. Use Value: 150°C TJ rating and 100% avalanche-tested design ensure reliability in under-hood temperature cycling. |
| Industrial Motor Drive Half-Bridge | USB-C Power Delivery Sink |
Use Scenario: 24 V BLDC motor gate driver output stage with PWM commutation. IC Role / Device Role: Low-side switch in half-bridge topology driving motor phase winding. Use Value: 31 nC Qg and 11.5 nC Qsw enable clean 100 kHz switching with minimal gate driver dissipation. | Use Scenario: Input power path management in portable USB-C PD adapter. IC Role / Device Role: Reverse-polarity and overcurrent protection switch upstream of controller. Use Value: 1.2 V VSD body diode forward drop allows bidirectional current flow during PD negotiation without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | Higher RDS(on) (14 mΩ), same SO-8, 30 V rating | Slightly lower efficiency at high current; identical footprint and drive requirements | Use where cost sensitivity outweighs 0.15 W extra conduction loss at 7 A |
| SI7840DP-T1-GE3 | Lower Qg (18 nC), higher RDS(on) (13.5 mΩ), same VDS | Better switching efficiency but higher conduction loss; requires same gate drive | Prefer for >200 kHz switching where Qsw dominates total loss |
Compared with IRF7805QTRPBF, IRF7832TRPBF trades lower cost for higher conduction loss, while SI7840DP-T1-GE3 favors high-frequency switching over DC efficiency-selection depends on dominant loss mechanism in the target operating point.
Availability
IRF7805QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial motor drives, and USB-C power delivery systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF7805QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with focus on efficiency, reliability, and thermal performance.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion in automotive, industrial, and computing applications, emphasizing low RDS(on), fast switching, and rugged avalanche capability.
FAQ
Is IRF7805QTRPBF suitable for 3.3 V logic-level gate drive?
No. While its gate threshold voltage starts at 1.0 V, full enhancement requires ≥4.5 V VGS for specified RDS(on); at 3.3 V, RDS(on) rises significantly (>30 mΩ), increasing conduction loss. Use only with 4.5 V or higher gate drive for rated performance.
What is the maximum continuous drain current at 70°C ambient?
At TA = 70°C with standard SO-8 mounting on FR-4, the maximum continuous drain current is 10 A - derived from PD = 1.6 W (derated from 2.5 W at 25°C using 0.02 W/°C factor) and RDS(on) = 11 mΩ, yielding ID = √(PD/RDS(on)) ≈ 12 A, limited by package thermal resistance.
Does IRF7805QTRPBF include integrated ESD protection?
No. IRF7805QTRPBF has no built-in ESD protection circuitry. Its gate oxide is rated for ±12 V absolute maximum VGS; external TVS diodes or series gate resistors are required in handling and PCB layout to prevent ESD damage during assembly or operation.
Can IRF7805QTRPBF be used in parallel configurations?
Yes, but with strict layout symmetry: matched gate drive impedance, identical trace length/width to each device, and shared thermal plane. Its positive temperature coefficient of RDS(on) promotes current sharing, but gate charge mismatch may cause dynamic imbalance during switching transitions.
IRF7805QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7805QTRPBF FAQ
1.How can I place an order for IRF7805QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7805QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7805QTRPBF reliable?
The price and inventory of IRF7805QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7805QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7805QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7805QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7805QTRPBF?
IRF7805QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7805QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7805QTRPBF?
For technical support, including IRF7805QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7805QTRPBF requirements.
6.How does Aetrix verify that IRF7805QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7805QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7805QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7805QTRPBF?
All IRF7805QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7805QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7805QTRPBF part is unused and in its original packaging.
Return procedure for IRF7805QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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