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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7805ZGTRPBF

Name: IRF7805ZGTRPBF
Brand: Infineon Technologies
SKU: IRF7805ZGTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7805ZGTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7805ZGTRPBF.pdf

Description:: MOSFET N-CH 30V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7805ZGTRPBF from Infineon Technologies is a 30V, 16A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as the synchronous rectifier FET in high-frequency buck converters. It features 5.5 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and fully characterized avalanche capability (72 mJ E_AS). It is used in point-of-load DC/DC stages for networking and computing systems.

For engineers reviewing the IRF7805ZGTRPBF datasheet, IRF7805ZGTRPBF pinout, IRF7805ZGTRPBF application, or IRF7805ZGTRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 20–30 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET operates as a low-side synchronous rectifier in non-isolated buck topologies, where its ultra-low R_DS(on) minimizes conduction loss while its 6.2 nC gate-to-drain charge (Q_gd) and 1.6 nC post-threshold gate charge (Q_gs2) jointly determine switching transition control and C_dv/dt turn-on immunity. The device's 1.35–2.25 V gate threshold enables robust drive compatibility with standard 3.3 V and 5 V controllers.

Its fully rated avalanche energy (72 mJ at T_J = 25°C) and 100% R_g tested construction support reliable operation under unclamped inductive switching stress. The integrated body diode exhibits 1.0 V forward drop at 12 A and 29–44 ns reverse recovery time-critical parameters for minimizing shoot-through and cross-conduction loss in synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; sets upper limit for input rail in buck converters.
R_DS(on) max @ 10 V	6.8 mΩ - Confirmed conduction loss contributor at full gate drive; enables <1 W conduction loss at 12 A RMS.
Q_g typ.	18 nC - Total gate charge defining drive strength requirement and switching speed at given gate resistance.
Q_gd	6.2 nC - Gate-drain charge determining Miller plateau duration and susceptibility to C_dv/dt turn-on.
E_AS	72 mJ - Single-pulse avalanche energy rating; validates ruggedness during transient overvoltage events.
Q_rr	20–30 nC - Reverse recovery charge of integrated body diode; directly impacts shoot-through loss in synchronous FETs.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance on standard FR-4 PCB; defines maximum power dissipation at ambient temperature.

Pinout & Package

IRF7805ZGTRPBF is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal performance. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain terminals (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥4.5 V drive for full enhancement; low 1.0–2.1 Ω gate resistance supports fast edge rates.
2,3,4,6,7,8	Drain	High-current output node; all six pins internally connected to drain metallization and exposed pad for thermal conduction.
5	Source	Power return path; referenced to controller ground; critical for accurate current sensing and gate drive loop integrity.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	7.0 mΩ - Enables efficient operation with 3.3 V or 5 V gate drivers without requiring bootstrap or level-shift circuitry.
Fully characterized avalanche	72 mJ E_AS - Validated single-pulse ruggedness eliminates need for external snubbers in typical buck layouts.
100% R_g tested	1.0–2.1 Ω gate resistance - Ensures consistent switching timing and predictable drive current requirements across production lots.
Low Q_gd/Q_gs1 ratio	6.2 nC / 4.7 nC ≈ 1.32 - Reduces risk of parasitic turn-on during high dV/dt node transitions in synchronous rectifiers.

Applications

Server VRM

Network Switch PoL

Use Scenario: 12 V input to 1.0–1.8 V output conversion delivering up to 100 A per phase in dual-phase server voltage regulator modules.

IC Role / Device Role: Low-side synchronous rectifier FET paired with high-side control FET in interleaved buck stage.

Use Value: 5.5 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 8 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Point-of-load regulation for ASIC/FPGA cores in 1U network switches operating at 500 kHz–1 MHz switching frequency.

IC Role / Device Role: Synchronous rectifier in compact, high-density buck converter with tight thermal constraints.

Use Value: SO-8 package with exposed drain pad achieves 2.5 W dissipation at 70°C ambient, enabling smaller heatsink footprint.

Storage Controller PSU

AI Accelerator Board

Use Scenario: 5 V–12 V input to 0.8 V output conversion for NVMe SSD controller power rails with dynamic load steps up to 20 A/µs.

IC Role / Device Role: Secondary-side FET in multiphase buck supplying memory I/O and core logic domains.

Use Value: 29 ns t_rr and 20 nC Q_rr minimize reverse recovery loss during rapid load transients, preserving output voltage stability.

Use Scenario: Distributed 0.75 V power delivery to GPU-like AI accelerators with peak currents exceeding 80 A per rail.

IC Role / Device Role: High-current synchronous rectifier in thermally constrained board-level DC/DC module.

Use Value: 120 A pulsed drain current rating supports short-duration current surges without derating, maintaining safe SOA margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7807ZPBF	R_DS(on) = 7.8 mΩ @ 10 V; Q_g = 15 nC; same SO-8 package	Slightly higher conduction loss but lower gate charge reduces drive loss at high frequency	Prefer when switching frequency exceeds 1 MHz and gate drive capability is limited
SiR872DP-T1-GE3	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 22 nC; PowerPAK® SO-8 package with improved R_θJA = 40 °C/W	Lower R_DS(on) improves conduction efficiency; higher Q_g increases drive loss	Prefer when thermal headroom is constrained and board space allows larger copper area for thermal relief

Compared with IRF7805ZGTRPBF, IRF7807ZPBF trades conduction loss for reduced gate drive burden, while SiR872DP-T1-GE3 delivers lower R_DS(on) and better thermal resistance at the cost of higher gate charge-making each optimal under distinct layout, frequency, and thermal conditions.

Availability

IRF7805ZGTRPBF is available at Aetrix Electronics and suitable for server VRMs, network switch point-of-load converters, and AI accelerator board power delivery requiring stable component supply and long-term industrial availability.

Supply support for IRF7805ZGTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial applications-designed specifically for synchronous rectification, motor control, and DC/DC conversion where low R_DS(on), fast switching, and avalanche ruggedness are essential.

FAQ

Is IRF7805ZGTRPBF suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage range of 1.35–2.25 V and guaranteed R_DS(on) ≤ 8.7 mΩ at V_GS = 4.5 V, it fully enhances under 3.3 V logic-level drive in most practical layouts. However, conduction loss increases ~25% versus 10 V drive due to higher R_DS(on), so thermal design must account for this.

What is the maximum continuous drain current at 70°C ambient?

The datasheet specifies 12 A continuous drain current at T_A = 70°C with standard SO-8 mounting on 1 in² 2-oz copper. This assumes no forced airflow and accounts for R_θJA = 50 °C/W and T_J(max) = 150°C. Derating is linear beyond 70°C at 0.02 W/°C.

Does IRF7805ZGTRPBF have an integrated Schottky diode?

No. It contains a standard integral p-n junction body diode, not a Schottky. Its V_SD is 1.0 V at 12 A and reverse recovery time is 29–44 ns. While not Schottky-fast, its Q_rr (20–30 nC) and soft recovery characteristics are optimized for synchronous buck rectification.

Can IRF7805ZGTRPBF replace IRF7805ZPbF in new designs?

Yes. IRF7805ZGTRPBF is the lead-free, tape-and-reel packaged version of IRF7805ZPbF, with identical electrical specifications, SO-8 footprint, and thermal performance. The "GTR" suffix denotes green (halogen-free) packaging and "PBF" confirms Pb-free plating-fully compliant with RoHS and JEDEC standards.

IRF7805ZGTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7805ZGTRPBF FAQ

1.How can I place an order for IRF7805ZGTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7805ZGTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7805ZGTRPBF reliable?

The price and inventory of IRF7805ZGTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7805ZGTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7805ZGTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7805ZGTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7805ZGTRPBF?

IRF7805ZGTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7805ZGTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7805ZGTRPBF?

For technical support, including IRF7805ZGTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7805ZGTRPBF requirements.

6.How does Aetrix verify that IRF7805ZGTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7805ZGTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7805ZGTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7805ZGTRPBF?

All IRF7805ZGTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7805ZGTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7805ZGTRPBF part is unused and in its original packaging.

Return procedure for IRF7805ZGTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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