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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7805ZPBF

Name: IRF7805ZPBF
Brand: Infineon Technologies
SKU: IRF7805ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7805ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7805ZPBF.pdf

Description:: MOSFET N-CH 30V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7805ZPBF from Infineon Technologies is a 30V, 16A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous buck converter low-side switch with 5.5 mΩ R_DS(on) at V_GS = 10 V and 18 nC total gate charge, enabling high-efficiency operation in point-of-load DC/DC converters for networking and computing systems.

For engineers reviewing the IRF7805ZPBF datasheet, IRF7805ZPBF pinout, IRF7805ZPBF application, or IRF7805ZPBF equivalent, key selection criteria include its ultra-low gate impedance (1.0–2.1 Ω), fully characterized avalanche capability (72 mJ E_AS), body diode reverse recovery performance (Q_rr = 20–30 nC), and thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon process technology with integrated body diode and is rated for continuous drain current up to 16 A at T_A = 25°C and 12 A at T_A = 70°C. Its gate threshold voltage (1.35–2.25 V) enables 4.5 V logic-level drive compatibility while maintaining robust noise immunity.

The device features fully specified switching parameters: t_d(on) = 11 ns, t_r = 10 ns, t_d(off) = 14 ns, and t_f = 3.7 ns under V_DD = 15 V, V_GS = 4.5 V, and I_D = 12 A conditions. Input capacitance (C_iss = 2080 pF) and reverse transfer capacitance (C_rss = 220 pF) support stable high-frequency operation up to several MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24 V input rails and transient margin
R_DS(on) max	6.8 mΩ @ V_GS = 10 V - ensures ≤1.1 W conduction loss at 12 A DC load
Q_g typ.	18 nC - determines gate driver power requirement and switching speed trade-off
I_D cont. @ 25°C	16 A - supports high-current POL stages without external heatsinking
E_AS	72 mJ - enables reliable unclamped inductive switching in synchronous buck topologies
Q_rr	20–30 nC - quantifies body diode recovery loss transferred to high-side FET during dead-time
R_θJA	50 °C/W - defines junction-to-ambient thermal rise under standard PCB layout (1 in² 2 oz Cu)

Pinout & Package

IRF7805ZPBF is housed in a surface-mount SO-8 (Small Outline-8) package with exposed drain pad for enhanced thermal performance. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring <18 nC charge for full enhancement; low R_G (1.0–2.1 Ω) minimizes ringing
2,3,4,6,7,8	Drain	High-current output node connected to switching node; multiple pins reduce current density and parasitic inductance
5	Source	Power return path and reference for gate drive; tied to power ground plane in buck low-side configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables direct interface with 5 V or 3.3 V PWM controllers without level-shifting
Fully characterized avalanche voltage/current	Supports robust operation under inductive switching stress without derating
100% tested gate resistance (R_G)	Ensures consistent turn-on/turn-off timing across production lots
Low Q_gd/Q_gs1 ratio	Reduces susceptibility to C_dv/dt induced turn-on during high dV/dt transitions

Applications

Server VRM

Network Switch POL

Use Scenario: 12 V input to 1.2 V/150 A CPU core supply in dual-phase interleaved buck converter.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz with 100 ns dead time.

Use Value: 5.5 mΩ R_DS(on) limits conduction loss to <1.25 W per phase; 18 nC Q_g allows clean 20 ns gate transitions with 1 A driver.

Use Scenario: 48 V to 3.3 V intermediate bus converter feeding 10 GbE PHYs and SerDes lanes.

IC Role / Device Role / Timing Role: Secondary-side switch in non-isolated buck stage with 1 MHz switching frequency.

Use Value: 72 mJ E_AS withstands 40 V transients on 48 V rail; 29 ns t_rr minimizes cross-conduction loss during dead-time.

GPU Memory Rail

AI Accelerator Core Supply

Use Scenario: 5 V to 0.8 V/80 A supply for GDDR6 memory subsystem with tight voltage regulation.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck with adaptive dead-time control.

Use Value: 220 pF C_rss suppresses Miller-induced false turn-on; 50 °C/W R_θJA enables 1.5 W dissipation on 4-layer board.

Use Scenario: 12 V to 0.75 V/300 A supply for AI inference ASIC with dynamic voltage scaling.

IC Role / Device Role / Timing Role: High-current low-side switch in 6-phase buck with digital PWM controller.

Use Value: 16 A I_D rating supports 50 A per phase peak; 2080 pF C_iss stabilizes gate drive loop with 1 Ω series resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PbF	R_DS(on) = 4.2 mΩ @ 4.5 V; Q_g = 22 nC; SO-8 with thermal pad	Better 4.5 V drive efficiency but higher gate charge increases driver loss	Preferred when gate drive voltage is limited to ≤4.5 V and thermal pad layout is available
SI7842DP-T1-GE3	R_DS(on) = 6.0 mΩ @ 10 V; Q_g = 15 nC; SO-8, no thermal pad	Lower gate charge reduces driver power but lacks avalanche rating documentation	Selected where gate drive strength is constrained and avalanche stress is absent

Compared with IRF7805ZPBF, IRLHS6242PbF delivers lower on-resistance at logic-level drive but requires more gate drive energy, while SI7842DP-T1-GE3 offers faster switching with reduced Q_g yet omits published avalanche specifications-making IRF7805ZPBF the balanced choice for rugged, high-current POL designs.

Availability

IRF7805ZPBF is available at Aetrix Electronics and suitable for server VRMs, network switch POL supplies, and AI accelerator core power delivery requiring stable component supply and long-term industrial availability.

Supply support for IRF7805ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency DC/DC conversion with emphasis on low R_DS(on), fast switching, and ruggedness in computing and communications infrastructure.

FAQ

Is IRF7805ZPBF suitable for 5 V gate drive applications?

Yes. With a gate threshold voltage of 1.35–2.25 V and guaranteed R_DS(on) of 7.0 mΩ at V_GS = 4.5 V, IRF7805ZPBF is fully enhanced and functional under 5 V logic-level drive. Its low Q_g (18 nC) and R_G (1.0–2.1 Ω) ensure fast, stable switching without external gate resistors in most 5 V PWM controller interfaces.

What is the maximum pulsed drain current (I_DM) for IRF7805ZPBF?

The absolute maximum pulsed drain current is 120 A, specified under clamped inductive load conditions with pulse width ≤100 µs and duty cycle ≤1%. This rating reflects short-duration surge capability during startup or fault events-not continuous operation-and assumes case temperature remains below 25°C during the pulse.

Does IRF7805ZPBF include an integrated body diode, and how is it characterized?

Yes. It integrates a monolithic N-channel MOSFET body diode with forward voltage V_SD ≤1.0 V at I_S = 12 A and T_J = 25°C. Reverse recovery is fully characterized: t_rr = 29–44 ns and Q_rr = 20–30 nC at di/dt = 100 A/µs, enabling accurate loss modeling in synchronous rectification circuits.

How does the SO-8 package of IRF7805ZPBF manage thermal performance?

The SO-8 package uses an exposed drain pad soldered to a PCB copper pour, achieving R_θJA = 50 °C/W on a standard 1 in² 2 oz Cu board. Junction-to-drain thermal resistance is 20 °C/W, allowing heat to be conducted directly into the PCB ground plane-critical for maintaining T_J < 150°C under 1.5 W continuous dissipation.

IRF7805ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7805ZPBF FAQ

1.How can I place an order for IRF7805ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7805ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7805ZPBF reliable?

The price and inventory of IRF7805ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7805ZPBF is usually 5 days.

3.What payment methods are accepted for IRF7805ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7805ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7805ZPBF?

IRF7805ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7805ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7805ZPBF?

For technical support, including IRF7805ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7805ZPBF requirements.

6.How does Aetrix verify that IRF7805ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF7805ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7805ZPBF meets industry standards.

7.What is the process for return or replacement of IRF7805ZPBF?

All IRF7805ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7805ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7805ZPBF part is unused and in its original packaging.

Return procedure for IRF7805ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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