Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7805ZTRPBF

Name: IRF7805ZTRPBF
Brand: Infineon Technologies
SKU: IRF7805ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7805ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7805ZTRPBF.pdf

Description:: MOSFET N-CH 30V 16A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,621

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7805ZTRPBF from Infineon Technologies is a 30V, 16A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as the synchronous rectifier FET in high-frequency buck converters. It delivers 5.5 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 100% avalanche-tested robustness for point-of-load applications in networking and computing systems.

For engineers reviewing the IRF7805ZTRPBF datasheet, IRF7805ZTRPBF pinout, IRF7805ZTRPBF application, or IRF7805ZTRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 20–30 nC), and SO-8 thermal performance under continuous 12 A conduction.

Technical Context

This MOSFET operates as a low-side synchronous rectifier in non-isolated DC/DC converters, where its ultra-low gate impedance (R_G = 1.0–2.1 Ω) and characterized Q_gd = 6.2 nC minimize C_dv/dt-induced turn-on risk during high dV/dt node transitions. Its fully specified avalanche energy (E_AS = 72 mJ) supports unclamped inductive switching stress.

The device features a co-packaged integral body diode with V_SD ≤ 1.0 V at 12 A and t_rr = 29–44 ns, enabling efficient freewheeling in synchronous buck topologies. Thermal design relies on R_θJA = 50 °C/W (max) and R_θJL = 20 °C/W for lead-mounted PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin
R_DS(on) max	6.8 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 12 A RMS in compact SO-8 footprint
Q_g typ.	18 nC - Determines gate drive power and switching speed in 300–1000 kHz buck converters
Q_gd	6.2 nC - Critical for C_dv/dt immunity; low ratio to Q_gs1 suppresses false turn-on at switch node
t_rr	29–44 ns - Limits reverse recovery loss transfer to high-side FET and EMI generation
E_AS	72 mJ - Validated single-pulse avalanche capability ensures reliability under load dump or startup fault
R_θJA	50 °C/W max - Defines thermal derating limit for 1.6 W dissipation at 70 °C ambient

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction; standard JEDEC MS-012AC outline, 1.75 mm height, 5.0 mm × 6.0 mm body.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally paralleled terminals forming main current path; connected to exposed pad for thermal and electrical sinking
8	Gate (G)	Control terminal requiring 10 V for full enhancement; low R_G enables fast turn-on with minimal overshoot
Source (S)	Source (S)	Reference node for gate drive and current sensing; pins 1–7 are drains, so source is isolated to pin S only

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables direct 5 V gate drive compatibility without level-shifting, reducing BOM count in controller-integrated designs
Fully characterized Q_gd/Q_gs1	Supports stable operation in high dV/dt environments (e.g., >50 V/ns) without external gate clamping
100% R_G tested	Guarantees consistent gate drive timing across production lots, critical for multi-phase current balancing
Body diode t_rr and Q_rr specified	Allows accurate loss modeling of synchronous rectification losses in simulation tools like PSIM or SIMPLIS
Avalanche-rated E_AS	Permits safe operation during output short-circuit or inductor saturation events without derating or external snubbers

Applications

Server VRM

Network Switch PoL

Use Scenario: 12 V input → 0.8–1.8 V output, 300–600 kHz, 100 A+ per rail using multiphase interleaving.

IC Role / Device Role: Low-side synchronous rectifier FET in each phase leg.

Use Value: 5.5 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 10 mΩ devices, improving 12 V to core voltage efficiency by 0.8–1.2%.

Use Scenario: 48 V intermediate bus → 3.3 V/5 V/12 V outputs for ASICs, PHYs, and SerDes in 10/25/100 GbE switches.

IC Role / Device Role: Secondary-side switch in isolated forward or non-isolated buck converters.

Use Value: 18 nC Q_g enables clean 1 MHz switching with minimal gate driver loss, supporting high-density board layouts.

GPU Power Delivery

AI Accelerator Module

Use Scenario: Multi-rail, high-transient GPU core voltage regulation with >500 A peak current demand.

IC Role / Device Role: Synchronous FET in parallel-configured phases with current-sharing control.

Use Value: Matched R_DS(on) tolerance and 100% R_G test ensure uniform current division across paralleled devices, preventing thermal runaway.

Use Scenario: On-module 3.3 V/0.8 V supplies for TPUs and inference accelerators operating at >2 GHz clock rates.

IC Role / Device Role: Final-stage point-of-load regulator FET adjacent to die.

Use Value: SO-8 package with exposed drain pad achieves 20 °C/W junction-to-lead thermal resistance, maintaining <105 °C junction temp at 12 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 22 nC; SO-8 with enhanced thermal pad	Higher gate charge increases drive loss at >1 MHz; better thermal R_θJA = 42 °C/W	Preferred for thermally constrained 1 MHz+ designs where gate drive power budget allows +22% Q_g
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; Q_g = 55 nC	Lower R_DS(on) but 3× higher Q_g; requires larger layout area and stronger gate driver	Used when conduction loss dominates and board space permits TO-263; not drop-in for SO-8 footprint

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF7805ZTRPBF offers optimal balance of low Q_g, validated C_dv/dt immunity, and SO-8 manufacturability-making it preferred for cost-sensitive, high-volume 300–800 kHz server and networking PoL modules.

Availability

IRF7805ZTRPBF is available at Aetrix Electronics and suitable for server VRMs, network switch point-of-load regulators, and AI accelerator power delivery systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.

Supply support for IRF7805ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in datacenter, telecom, and industrial applications-designed specifically for synchronous rectification, motor control, and DC/DC conversion where R_DS(on), Q_g, and ruggedness must be simultaneously optimized.

FAQ

Is IRF7805ZTRPBF suitable for 5 V gate drive in synchronous buck converters?

Yes. The device specifies R_DS(on) = 7.0 mΩ max at V_GS = 4.5 V and 8.7 mΩ at V_GS = 3.3 V, enabling reliable operation with 5 V controllers such as TI UCC28950 or ON Semi NCP4306 without gate boosting. Its low threshold voltage (1.35–2.25 V) ensures full enhancement even with gate drive droop.

What is the maximum continuous drain current at 70 °C ambient?

The datasheet specifies I_D = 12 A at T_A = 70 °C with SO-8 mounting on 1 in² 2 oz copper. This rating assumes no forced airflow and standard JEDEC 2s2p board layout. At 12 A, power dissipation is ~0.97 W (12² × 6.8 mΩ), resulting in ~49 °C junction rise above ambient using R_θJA = 50 °C/W.

Does IRF7805ZTRPBF have a specified body diode reverse recovery charge (Q_rr)?

Yes. Q_rr is specified as 20–30 nC at T_J = 25 °C, I_F = 12 A, di/dt = 100 A/µs, and V_DD = 15 V. This value is critical for estimating cross-conduction loss in synchronous rectifiers and is measured per JEDEC JESD24-10 standard.

Can IRF7805ZTRPBF replace IRF7805PbF in existing designs?

Yes. IRF7805ZTRPBF is the lead-free, tape-and-reel packaged version of IRF7805PbF with identical electrical specifications, SO-8 mechanical dimensions, and thermal characteristics. The "Z" suffix denotes green packaging, and "TR" indicates tape-and-reel; no layout or firmware changes are required for migration.

IRF7805ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7805ZTRPBF FAQ

1.How can I place an order for IRF7805ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7805ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7805ZTRPBF reliable?

The price and inventory of IRF7805ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7805ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7805ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7805ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7805ZTRPBF?

IRF7805ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7805ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7805ZTRPBF?

For technical support, including IRF7805ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7805ZTRPBF requirements.

6.How does Aetrix verify that IRF7805ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7805ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7805ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7805ZTRPBF?

All IRF7805ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7805ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7805ZTRPBF part is unused and in its original packaging.

Return procedure for IRF7805ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…