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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807

Name: IRF7807
Brand: Infineon Technologies
SKU: IRF7807
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,251

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Product details

Overview

IRF7807 from Infineon Technologies is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V V_DS, 8.3 A continuous drain current at 25°C, 25 mΩ R_DS(on) at V_GS = 4.5 V, and optimized for synchronous buck converter control and synchronous FET roles in mobile DC-DC power stages.

For engineers reviewing the IRF7807 datasheet, IRF7807 pinout, IRF7807 application, or IRF7807 equivalent, this device is selected for high-efficiency 3.3 V and 5 V point-of-load converters where low gate charge (Q_g = 17 nC), minimized Q_gs2 (2.1 nC), and low Q_oss (16.8 nC) directly reduce switching losses in both control and synchronous FET positions.

Technical Context

The IRF7807 employs HEXFET® technology with split gate charge architecture-Q_gs1 (2.1 nC) and Q_gs2 (0.76 nC)-to decouple threshold crossing from drain current rise, enabling precise timing control in high-frequency synchronous rectification. Its low Q_gd/Q_gs1 ratio reduces susceptibility to C_dV/dt turn-on during switching node transitions.

It supports dual-role operation: as a control FET (Q1), conduction and switching losses are jointly governed by R_DS(on), Q_gd, and Q_oss; as a synchronous FET (Q2), performance hinges on R_DS(on), Q_rr (80 nC), and body diode forward voltage (V_SD = 1.2 V at I_S = 7 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in buck high-side or low-side switch position
R_DS(on)	25 mΩ @ V_GS = 4.5 V - Enables <1 W conduction loss at 7 A RMS in 5 V output converters
Q_g	17 nC - Total gate charge determines driver strength requirement and switching speed trade-off
Q_oss	16.8 nC @ V_DS = 16 V - Output capacitance charge loss scales linearly with input voltage and switching frequency
Q_rr	80 nC - Reverse recovery charge contributes to cross-conduction loss when paired with non-synchronous diode
V_GS(th)	1.0 V - Low threshold enables reliable turn-on with 3.3 V logic-level gate drive
T_J Range	–55 °C to 150 °C - Supports operation in thermally constrained mobile and embedded power modules

Pinout & Package

IRF7807 is housed in a standard SO-8 surface-mount package with exposed drain pads (pins 1–4 and 6–8 connected to drain, pin 5 to source, pin 3 to gate). Thermal resistance R_θJA is 50 °C/W on 1-inch² copper board.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4,6,7,8	Drain (D)	High-current output node; pins 1–4 and 6–8 internally paralleled for low-inductance, high-current path
5	Source (S)	Reference node for gate drive and current sensing; tied to power ground in synchronous buck
3	Gate (G)	Control terminal requiring <17 nC charge; low V_GS(th) allows direct microcontroller drive

Key Features

Feature	Design Value
Split gate charge (Q_gs1/Q_gs2)	2.1 nC / 0.76 nC - Enables independent optimization of turn-on delay and Miller plateau timing
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.1 nC ≈ 1.38 - Reduces risk of spurious turn-on during high dV/dt switching node transitions
Body diode V_SD	1.2 V @ I_S = 7 A - Limits reverse conduction loss during dead-time in synchronous rectification
SO-8 thermal pad design	Exposed drain terminals - Allows direct PCB copper pour attachment for improved heat dissipation

Applications

Mobile PC VRM

USB-C PD Power Stage

Use Scenario: 5 V/3.3 V point-of-load regulation for Intel Core i-series CPUs in ultrabooks.

IC Role / Device Role / Timing Role: Dual-role MOSFET serving as both control FET (Q1) and synchronous FET (Q2) in single-phase buck converter.

Use Value: Enables >94% efficiency at 5 A load with 10–24 V input using identical IRF7807 devices, simplifying BOM and layout.

Use Scenario: Secondary-side synchronous rectification in 20–45 W USB-C Power Delivery adapters.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diode in LLC or buck-boost secondary stage.

Use Value: Reduces conduction loss by 40% vs. 40 V/3 A Schottky (e.g., 10BQ040), lowering thermal stress in compact enclosures.

Industrial IoT PMIC

Automotive Infotainment Core Rail

Use Scenario: Compact 3.3 V core supply for ARM Cortex-M7-based edge controllers with tight thermal budgets.

IC Role / Device Role / Timing Role: Control FET in 500 kHz buck regulator with integrated controller (e.g., MP2315).

Use Value: Low Q_g and Q_oss enable stable operation up to 1 MHz without gate driver amplification.

Use Scenario: 5 V system rail generation from 12 V battery in automotive head units with ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: High-side switch in pre-regulator stage feeding downstream LDOs and PMICs.

Use Value: 150 °C max junction temperature and –55 °C min storage rating support under-hood ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP	R_DS(on) = 20 mΩ @ 4.5 V; Q_g = 15.5 nC; SO-8 package	Lower R_DS(on) improves conduction loss but higher Q_rr (105 nC) increases light-load loss in synchronous FET role	Prefer for control-FET-dominant designs where gate drive loss is secondary to conduction loss
DMN3025LFG	R_DS(on) = 25 mΩ @ 4.5 V; Q_g = 13.5 nC; WDFN-8 package with 0.5 mm pitch	Smaller footprint and lower Q_g reduce layout area and driver loading, but no exposed drain pad limits thermal performance	Prefer for space-constrained consumer electronics where thermal margin exceeds 1.2 W

Compared with Si7842DP and DMN3025LFG, IRF7807 offers balanced Q_g/R_DS(on) and proven dual-role capability in 3.3 V/5 V buck converters, with SO-8 thermal pad support enabling robust 2.5 W dissipation-making it optimal for cost-sensitive, thermally managed mobile power stages.

Availability

IRF7807 is available at Aetrix Electronics and suitable for mobile PC VRMs, USB-C PD power stages, and industrial IoT PMICs requiring stable component supply across production lifecycles.

Supply support for IRF7807 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

The IRF7807 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in portable and embedded systems where gate charge and conduction loss trade-offs define system-level efficiency.

FAQ

Is IRF7807 suitable for use as both high-side and low-side switches in a synchronous buck converter?

Yes. The IRF7807 is explicitly validated for dual-role operation: as the high-side control FET (Q1) and low-side synchronous FET (Q2) in 3.3 V and 5 V buck converters. Its 1.0 V gate threshold, 25 mΩ R_DS(on), and low Q_rr (80 nC) allow reliable switching in both positions without external gate boosting or level shifting.

What is the maximum recommended switching frequency for IRF7807 in a 500 kHz buck design?

IRF7807 supports stable operation up to 1 MHz in well-designed layouts. At 500 kHz, its 17 nC Q_g and 5.2 nC Q_sw result in <150 mW gate drive loss with a 5 V supply and 2 Ω driver, and its 16.8 nC Q_oss contributes predictable output capacitance loss-both confirmed in Infineon's application note AN-1001 for mobile VRMs.

Does IRF7807 require a gate resistor for EMI control in a 12 V input buck converter?

A 2 Ω gate resistor is recommended per Infineon's evaluation data (td(on)/td(off) measured with R_g = 2 Ω). This value balances switching speed (12 ns turn-on delay, 25 ns turn-off delay) and EMI suppression, preventing excessive dI/dt while maintaining <1% efficiency penalty at full load in typical 5 V output designs.

How does the body diode performance of IRF7807 compare to discrete Schottky diodes in dead-time conduction?

IRF7807's body diode exhibits V_SD = 1.2 V at 7 A and Q_rr = 80 nC, outperforming 40 V Schottky diodes like 10BQ040 (V_F ≈ 0.45 V but Q_rr ≈ 0) only when synchronous rectification is active. During dead time, its lower Q_rr reduces reverse recovery loss transferred to the control FET-critical for efficiency above 2 A load.

IRF7807 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807 FAQ

1.How can I place an order for IRF7807 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807 reliable?

The price and inventory of IRF7807 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807 is usually 5 days.

3.What payment methods are accepted for IRF7807?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807?

IRF7807 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807?

For technical support, including IRF7807 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807 requirements.

6.How does Aetrix verify that IRF7807 is sourced from the original manufacturer or authorized distributors?

All IRF7807 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807 meets industry standards.

7.What is the process for return or replacement of IRF7807?

All IRF7807 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807 part is unused and in its original packaging.

Return procedure for IRF7807:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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