Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807A

Name: IRF7807A
Brand: Infineon Technologies
SKU: IRF7807A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7807A

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807A.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,454

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7807A from Infineon Technologies is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V V_DS, 8.3 A continuous drain current at 25°C, 25 mΩ R_DS(on) at V_GS = 4.5 V, and 17 nC total gate charge - optimized as a control FET or synchronous rectifier in mobile DC-DC converters powering 3.3 V and 5 V microprocessor rails.

For engineers reviewing the IRF7807A datasheet, IRF7807A pinout, IRF7807A application, or IRF7807A equivalent, key selection criteria include verified R_DS(on) vs. temperature stability, Q_gd/Q_gs1 ratio for C_dv/dt immunity, Q_oss-driven switching loss at 16 V bus, and SO-8 thermal resistance (50°C/W junction-to-ambient on 1-in² copper).

Technical Context

This MOSFET employs HEXFET® technology with split gate charge (Q_gs1 = 2.1 nC, Q_gs2 = 0.76 nC) to minimize conduction and switching losses in high-frequency synchronous buck topologies. Its low Q_gd (2.9 nC) and Q_oss (16.8 nC at V_DS = 16 V) directly reduce shoot-through risk and output capacitance-related losses during hard-switching transitions.

The device supports dual-role operation: as a control FET (Q1), where Q_gs2 governs turn-on delay into full conduction; and as a synchronous FET (Q2), where body diode reverse recovery charge (Q_rr = 80 nC) and low R_DS(on) jointly determine light-load efficiency and cross-conduction margin under dV/dt stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 5 V input rail systems and transient clamping up to 24 V nominal bus.
R_DS(on)	25 mΩ @ V_GS = 4.5 V, I_D = 7 A - enables ≤125 mW conduction loss at 5 A load, critical for thermally constrained mobile PCBs.
Q_g	17 nC @ V_GS = 5 V - determines gate driver current requirement and switching transition time in 300–1000 kHz DC-DC controllers.
Q_oss	16.8 nC @ V_DS = 16 V - defines energy loss per cycle stored in output capacitance, directly impacting efficiency above 500 kHz.
Q_rr	80 nC @ dI/dt = 700 A/µs - quantifies body diode recovery loss transferred to control FET, limiting minimum off-time in synchronous operation.
R_θJA	50 °C/W - thermal resistance on 1-inch square copper board, enabling 1.6 W power dissipation at 70°C ambient without forced airflow.

Pinout & Package

SO-8 surface-mount package with exposed drain paddle (pins 1–3 and 5–7 are drains; pin 4 is gate; pins 6 and 8 are sources). Thermal pad electrically connected to drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,7	Drain (D)	High-current power path; all tied internally to thermal paddle for low-inductance, low-resistance heat sinking.
4	Gate (G)	Control terminal requiring <12 V drive; sensitive to C_dv/dt coupling due to Q_gd/Q_gs1 = 1.38 ratio.
6,8	Source (S)	Power return path for channel current and body diode conduction; referenced to controller ground in high-side switch configuration.

Key Features

Feature	Design Value
Split gate charge architecture	Q_gs1 = 2.1 nC, Q_gs2 = 0.76 nC - isolates threshold crossing from current rise, enabling precise timing control of Q1 turn-on in synchronous buck.
Low Q_gd/Q_gs1 ratio	1.38 - reduces susceptibility to spurious turn-on from switching node dV/dt, critical for stable operation at >1 MHz.
Optimized body diode	Q_rr = 80 nC, t_rr not specified - balances reverse recovery speed and forward voltage drop for minimal cross-conduction loss in Q2 position.
Thermally enhanced SO-8	50°C/W R_θJA on 1-in² Cu - delivers 1.6 W usable power dissipation at 70°C ambient, supporting compact 5 V/6 A converter designs.

Applications

Mobile PC Core Voltage Regulator

Ultrabook 3.3 V DDR Memory Rail

Use Scenario: Point-of-load converter stepping 12 V or 19 V adapter input down to 1.05 V core voltage for Intel Core i-series CPUs.

IC Role / Device Role: Paired IRF7807A devices serve as control FET (Q1) and synchronous FET (Q2) in single-phase buck stage.

Use Value: Achieves ≥94% peak efficiency at 5 A load with Vin = 14 V, enabled by matched R_DS(on) and Q_oss minimizing both conduction and capacitive switching loss.

Use Scenario: Dual-phase 3.3 V regulator supplying DDR3/DDR4 memory subsystem in fanless ultrabooks.

IC Role / Device Role: IRF7807A used as synchronous rectifier (Q2) with external control FET, leveraging low Q_rr to maintain >92% efficiency at 2 A per phase.

Use Value: Body diode Q_rr = 80 nC limits reverse recovery loss transfer to control FET, reducing thermal stress and enabling smaller heatsinking.

Tablet SoC Power Management

Portable SSD 5 V Auxiliary Rail

Use Scenario: Single-phase 0.8 V buck converter powering ARM-based application processors in sub-10 mm thick tablets.

IC Role / Device Role: IRF7807A operates as control FET (Q1) with 4.5 V gate drive from integrated controller, exploiting low Q_gs2 for fast turn-on.

Use Value: Q_gs2 = 0.76 nC minimizes delay between V_GS crossing V_th and I_D reaching full load, tightening duty-cycle control at 1 MHz switching frequency.

Use Scenario: Compact 5 V buck converter powering NVMe controller and NAND flash in M.2 SSD modules.

IC Role / Device Role: IRF7807A deployed as low-R_DS(on) synchronous FET (Q2) in 500 kHz topology with ceramic output capacitor.

Use Value: R_DS(on) = 25 mΩ ensures <62.5 mW conduction loss at 5 A, allowing full-power operation within 1.5 W thermal envelope of SSD enclosure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	R_DS(on) = 20 mΩ @ 4.5 V, Q_g = 22 nC, SO-8	Lower R_DS(on) improves conduction loss but higher Q_g increases gate drive loss and EMI at >1 MHz	Preferred for <500 kHz, high-current 5 V rails where thermal headroom exists
DMN3025LSD-13	R_DS(on) = 25 mΩ @ 4.5 V, Q_g = 13.5 nC, SO-8	Lower Q_g reduces switching loss and gate drive burden but Q_oss = 12.5 nC unverified at 16 V	Better for ultra-high-frequency (>1.2 MHz) mobile converters prioritizing fast switching over absolute R_DS(on) match

Compared with Si7850DP and DMN3025LSD, the IRF7807A offers balanced Q_g/R_DS(on) trade-off and documented Q_oss/Q_rr values at 16 V - making it more predictable for efficiency modeling in 300–800 kHz mobile DC-DC designs where both conduction and capacitive losses dominate.

Availability

IRF7807A is available at Aetrix Electronics and suitable for mobile PC core voltage regulation, ultrabook DDR memory rails, tablet SoC power management, and portable SSD auxiliary power conversion requiring stable component supply across production lifecycles.

Supply support for IRF7807A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency, high-density DC-DC conversion in battery-powered and thermally constrained systems - emphasizing gate charge optimization, body diode performance, and SO-8 thermal reliability.

FAQ

Is IRF7807A pin-compatible with IRF7807?

Yes, IRF7807A is fully pin-compatible with IRF7807 and shares identical SO-8 footprint, thermal pad layout, and terminal assignments. Both devices exhibit identical R_DS(on), Q_g, Q_oss, and absolute maximum ratings - the 'A' suffix denotes qualified revision with enhanced process consistency, not functional differentiation.

What is the maximum recommended operating frequency for IRF7807A in a synchronous buck converter?

Based on measured Q_sw = 5.2 nC and Q_oss = 16.8 nC at 16 V, the IRF7807A supports reliable operation up to 1 MHz in well-designed layouts with low-inductance gate loops. Efficiency drops above 800 kHz unless gate drive strength exceeds 2 A peak and PCB parasitics are minimized.

Can IRF7807A be used as a high-side switch with 12 V gate drive?

Yes - its ±12 V V_GS rating and 1.0 V V_GS(th) allow robust enhancement-mode operation with 12 V gate drive. However, in high-side configuration, a bootstrap gate driver is required to sustain V_GS > 4.5 V during continuous conduction, as the source swings with the switching node.

Does IRF7807A require external Schottky parallel diode for body diode operation?

No - the integrated body diode is characterized for Q_rr = 80 nC and V_SD = 1.2 V at 7 A, and is sufficient for synchronous rectification in standard buck converters. External Schottky diodes are only needed when Q_rr must be reduced below 50 nC, as noted in application note IRF7807/IRF7807A Rev C.

IRF7807A Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807A FAQ

1.How can I place an order for IRF7807A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807A reliable?

The price and inventory of IRF7807A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807A is usually 5 days.

3.What payment methods are accepted for IRF7807A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807A?

IRF7807A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807A?

For technical support, including IRF7807A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807A requirements.

6.How does Aetrix verify that IRF7807A is sourced from the original manufacturer or authorized distributors?

All IRF7807A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807A meets industry standards.

7.What is the process for return or replacement of IRF7807A?

All IRF7807A units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807A part is unused and in its original packaging.

Return procedure for IRF7807A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.