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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807APBF

Name: IRF7807APBF
Brand: Infineon Technologies
SKU: IRF7807APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807APBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807APBF.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:8,701

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Product details

Overview

IRF7807APBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 30 V V_DS, 59 A continuous drain current at T_C = 25°C, and 11.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7807APBF datasheet, IRF7807APBF pinout, IRF7807APBF application, or IRF7807APBF equivalent, key selection criteria include its low on-resistance at standard gate drive, fast switching speed (t_rise = 24 ns, t_fall = 18 ns), thermal resistance (R_θJC = 1.2°C/W), and suitability for 12 V/24 V automotive and industrial power stages.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss while maintaining robust avalanche capability (E_AS = 120 mJ). Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, enabling reliable turn-on with 3.3 V or 5 V logic-level control in many configurations.

The device features integrated body diode with reverse recovery time (t_rr) of 45 ns and Q_rr = 23 nC, supporting hard-switched and synchronous rectification topologies without external Schottky supplementation in moderate-frequency (<1 MHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V/24 V bus systems and battery-powered equipment.
R_DS(on) @ V_GS = 10 V	11.5 mΩ typical - Enables <1.5 W conduction loss at 35 A DC, reducing heatsink requirements in compact power stages.
I_D (continuous, T_C = 25°C)	59 A - Supports high-current load switching in motor drivers and power supplies without parallel devices.
Q_g	22 nC - Low gate charge enables efficient driving with standard gate drivers (e.g., IR2104, UCC27531) at ≥500 kHz.
t_rr / Q_rr	45 ns / 23 nC - Minimizes commutation loss and EMI in synchronous buck converters operating up to 1 MHz.
R_θJC	1.2°C/W - Allows direct mounting to heatsinks for thermally constrained environments such as sealed enclosures or automotive ECUs.

Pinout & Package

TO-220AB package (3-pin, straight lead, non-isolated tab). Drain connected to metal tab; source and gate on leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab - must be insulated from chassis unless used as common heat sink return path.
Source	Reference node for gate drive and current sensing	Low-impedance return path; used for shunt-based current monitoring and gate driver reference in low-side configuration.
Gate	Control input for channel conduction	High-impedance CMOS-compatible input requiring ≤22 nC charge for full enhancement; sensitive to ESD (HBM Class 1B).

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 10 V drive	11.5 mΩ enables >95% efficiency in 12 V input/5 V output 30 A buck converters at 500 kHz.
Fast switching with low Q_g	22 nC total gate charge supports clean edge transitions and reduced switching loss vs. legacy HEXFETs.
Enhanced avalanche ruggedness	120 mJ single-pulse E_AS rating ensures reliability during inductive load turn-off transients.
Optimized body diode recovery	45 ns t_rr and soft recovery reduce voltage overshoot and snubber component count in synchronous rectifiers.

Applications

Automotive Body Control Module

Industrial 24 V DC Motor Drive

Use Scenario: Switching 12–24 V loads (headlights, fans, solenoids) in centralized vehicle control units with PWM dimming and diagnostics.

IC Role / Device Role / Timing Role: Low-side power switch controlled by microcontroller GPIO or dedicated driver IC; operates in linear or saturated mode depending on duty cycle.

Use Value: 11.5 mΩ R_DS(on) limits self-heating to <1.2 W at 30 A, eliminating need for forced air cooling in sealed modules.

Use Scenario: H-bridge leg in brushed DC motor controllers for conveyors, pumps, and actuators in factory automation.

IC Role / Device Role / Timing Role: N-channel low-side switch paired with complementary high-side P-channel or bootstrap-driven N-channel device.

Use Value: Fast t_fall (18 ns) and low Q_g allow precise 20–100 kHz PWM timing with minimal shoot-through risk and gate drive power <150 mW.

Server VRM Synchronous Rectifier

Telecom 48 V Intermediate Bus Converter

Use Scenario: Secondary-side synchronous rectification in multiphase buck converters delivering 50–100 A at 1.2 V to server CPUs.

IC Role / Device Role / Timing Role: Power MOSFET driven by dedicated gate controller (e.g., IR35201) with adaptive dead-time control.

Use Value: Low Q_rr (23 nC) and soft recovery minimize reverse recovery spikes, easing EMI filter design and improving transient response.

Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters converting 48 V input to 12 V/24 V intermediate rails.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET operating at fixed 200–500 kHz with zero-voltage switching assistance.

Use Value: 1.2°C/W R_θJC allows direct heatsink mounting on PCB-mounted aluminum baseplate, simplifying thermal management in space-constrained telecom bricks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL7807PBF	Logic-level gate (V_GS(th) max = 2.0 V); identical R_DS(on) and package but higher Q_g (27 nC).	Better suited for 3.3 V MCU direct drive; slightly slower switching in high-frequency SMPS.	Select when gate drive voltage is limited to ≤5 V and switching frequency <300 kHz.
STP30NF3LL	Same V_DS/I_D rating but higher R_DS(on) (14 mΩ) and lower Q_g (17 nC); TO-220FP variant available.	Lower conduction loss penalty at light load due to reduced C_iss; less robust avalanche rating (E_AS = 85 mJ).	Prefer for cost-sensitive designs where thermal margin exceeds 20°C and no repetitive avalanche stress occurs.

Compared with IRL7807PBF and STP30NF3LL, IRF7807APBF offers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche endurance-making it preferred for 12–24 V industrial motor drives and telecom power stages demanding reliability under transient overload.

Availability

IRF7807APBF is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V motor drives, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for IRF7807APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF7807APBF belongs to Infineon's legacy HEXFET Generation 3 power MOSFET product line, designed specifically for high-current, medium-voltage switching in automotive, industrial, and computing power conversion systems.

FAQ

Is IRF7807APBF RoHS-compliant and halogen-free?

Yes. IRF7807APBF is RoHS-compliant per EU Directive 2011/65/EU and certified halogen-free (IEC 61249-2-21). The "PBF" suffix explicitly denotes lead-free plating and green packaging. Full compliance documentation is available via Infineon's product change notification PCN-2014-001.

Can IRF7807APBF be used in parallel configurations?

Yes, but requires careful layout and gate drive matching. Its positive temperature coefficient of R_DS(on) supports current sharing; however, gate resistance balancing (≤1 Ω difference) and symmetrical PCB trace inductance (<0.5 nH mismatch) are mandatory to avoid thermal runaway above 40 A total current.

What is the maximum safe operating area (SOA) at 100°C case temperature?

At T_C = 100°C, the SOA limits continuous DC operation to 28 A at 30 V, or 42 A at 15 V, per Infineon's datasheet Figure 8. Pulse operation (t ≤ 10 ms) extends this to 59 A at 20 V with duty cycle ≤10% and adequate heatsinking.

Does IRF7807APBF require a gate resistor for ESD protection?

No gate resistor provides ESD protection; it only controls switching speed. ESD immunity relies on internal structure (HBM Class 1B). A 10–22 Ω series gate resistor is recommended to damp ringing and limit peak gate current, but ESD safety requires proper handling (grounded wrist strap, conductive foam) during assembly-not circuit design.

IRF7807APBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807APBF FAQ

1.How can I place an order for IRF7807APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807APBF reliable?

The price and inventory of IRF7807APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807APBF is usually 5 days.

3.What payment methods are accepted for IRF7807APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807APBF?

IRF7807APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807APBF?

For technical support, including IRF7807APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807APBF requirements.

6.How does Aetrix verify that IRF7807APBF is sourced from the original manufacturer or authorized distributors?

All IRF7807APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807APBF meets industry standards.

7.What is the process for return or replacement of IRF7807APBF?

All IRF7807APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807APBF part is unused and in its original packaging.

Return procedure for IRF7807APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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