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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807ATR

Name: IRF7807ATR
Brand: Infineon Technologies
SKU: IRF7807ATR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807ATR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807ATR.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,841

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Product details

Overview

IRF7807ATR from Infineon Technologies is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V V_DS, 8.3 A continuous drain current at 25°C, 25 mΩ R_DS(on) at V_GS = 4.5 V, and optimized for synchronous buck converter control and synchronous FET roles in mobile DC-DC power stages.

For engineers reviewing the IRF7807ATR datasheet, IRF7807ATR pinout, IRF7807ATR application, or IRF7807ATR equivalent, this device is selected for high-efficiency 3.3 V and 5 V point-of-load converters where low gate charge (Q_g = 17 nC), minimized Q_gs2 (2.1 nC), and low Q_oss (16.8 nC) directly reduce switching losses in both control and synchronous FET positions.

Technical Context

This MOSFET employs HEXFET® technology with split gate charge architecture-Q_gs1 (2.1 nC) and Q_gs2 (0.76 nC)-to decouple threshold crossing from current rise, enabling precise timing control in high-frequency synchronous rectification. Its R_DS(on) remains stable across –55°C to 150°C junction temperature.

The device supports dual-role operation: as a control FET (Q1), its low Q_gd/Q_gs1 ratio mitigates C_dv/dt turn-on risk; as a synchronous FET (Q2), its low R_DS(on) and body diode V_SD = 1.2 V at 7 A reduce conduction loss and reverse recovery energy (Q_rr = 80 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in buck high-side switch position without avalanche stress.
R_DS(on)	25 mΩ @ V_GS = 4.5 V - Enables ≤125 mW conduction loss at 7 A RMS in 5 V output converters.
Q_g	17 nC - Total gate charge determines driver current requirement and switching transition time.
Q_oss	16.8 nC @ V_DS = 16 V - Output capacitance charge directly impacts turn-off loss and resonant ringing in hard-switched topologies.
Q_rr	80 nC - Body diode reverse recovery charge contributes to cross-conduction loss and EMI in synchronous rectifiers.
T_J Range	–55°C to 150°C - Validated operation across industrial and mobile thermal profiles without derating below 70°C ambient.

Pinout & Package

IRF7807ATR is housed in a standard SO-8 surface-mount package with exposed drain pads on pins 1–4 and 6–8, gate on pin 5, and source on pins 2–3 (dual-source configuration). Thermal resistance R_θJA = 50°C/W when mounted on 1-inch² copper board.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4,6,7,8	Drain (D)	Parallel-connected drain terminals reduce package inductance and improve current sharing in high-di/dt DC-DC phases.
5	Gate (G)	Single gate input requiring <17 nC charge for full enhancement; sensitive to C_dv/dt coupling from switching node.
2,3	Source (S)	Dual-source terminals lower source inductance, critical for minimizing shoot-through during synchronous FET commutation.

Key Features

Feature	Design Value
Split gate charge (Q_gs1/Q_gs2)	2.1 nC / 0.76 nC - Enables independent optimization of turn-on delay and current rise timing to minimize overlap loss.
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.1 nC ≈ 1.38 - Reduces susceptibility to false turn-on from switching-node dV/dt in synchronous buck topologies.
Body diode V_SD	1.2 V @ 7 A - Limits forward conduction loss during dead-time in synchronous rectification, improving light-load efficiency.
SO-8 thermal pad	Exposed drain paddle - Provides direct thermal path to PCB copper, supporting >1.6 W dissipation at 70°C ambient.

Applications

Mobile PC VRM

5 V Point-of-Load Converter

Use Scenario: Dual-phase 5 V input to 1.2 V/20 A CPU core supply in ultraportable notebooks.

IC Role / Device Role / Timing Role: Paired IRF7807ATR devices serve as both control and synchronous FETs per phase, operating at 500 kHz with 100 ns dead time.

Use Value: Identical R_DS(on) and Q_g enable matched timing and loss distribution, achieving >94% peak efficiency at 10 A load per phase.

Use Scenario: Single-phase 12 V input to 5 V/6 A USB-C PD port supply in thin client systems.

IC Role / Device Role / Timing Role: IRF7807ATR used as high-side control FET with external driver; low Q_oss minimizes turn-off loss at 1 MHz switching.

Use Value: 16.8 nC Q_oss reduces capacitive turn-off energy by 32% versus comparable 30 V MOSFETs, lowering thermal stress on gate driver.

3.3 V System Rail

Industrial IoT PMIC

Use Scenario: 24 V input to 3.3 V/3 A always-on rail for MCU and sensor interface in battery-backed edge nodes.

IC Role / Device Role / Timing Role: IRF7807ATR deployed as synchronous FET; body diode V_SD = 1.2 V ensures low dropout during startup and light-load burst mode.

Use Value: 80 nC Q_rr limits reverse recovery loss to <1.5 mW at 100 kHz, preserving >91% efficiency down to 50 mA load.

Use Scenario: Multi-rail PMIC auxiliary stage powering FPGA I/O banks (1.8 V/2 A) from 5 V intermediate bus.

IC Role / Device Role / Timing Role: IRF7807ATR functions as low-side synchronous FET; dual-source pins (2,3) reduce source loop inductance for clean gate drive return.

Use Value: Dual-source layout lowers effective source inductance to <0.4 nH, suppressing gate oscillation and enabling stable 2 MHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP-T1-GE3	R_DS(on) = 20 mΩ @ 4.5 V; Q_g = 15.5 nC; SO-8 package with enhanced thermal pad	Lower R_DS(on) improves conduction loss but higher Q_oss (22 nC) increases turn-off loss at >1 MHz	Preferred for fixed-frequency 500 kHz–1 MHz designs prioritizing conduction over switching loss.
DMN3025LFG-7	R_DS(on) = 25 mΩ @ 4.5 V; Q_g = 13.5 nC; Q_oss = 12.5 nC; same SO-8 footprint	Lower Q_g and Q_oss reduce gate drive and capacitive loss, but body diode V_SD = 1.4 V increases light-load conduction loss	Better for high-frequency (>1.5 MHz), light-load dominant applications where gate drive loss dominates.

Compared with Si7842DP and DMN3025LFG, IRF7807ATR offers balanced Q_gs2/Q_gd ratio and verified dual-role capability in 3.3 V/5 V converters-making it uniquely suitable for cost-sensitive designs using identical FETs for both control and synchronous positions.

Availability

IRF7807ATR is available at Aetrix Electronics and suitable for mobile PC VRMs, 5 V point-of-load converters, and industrial IoT PMICs requiring stable component supply and long-term production continuity.

Supply support for IRF7807ATR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.

The IRF7807ATR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency DC-DC conversion in space-constrained mobile and embedded systems where thermal performance and gate charge optimization are critical.

FAQ

What is the maximum continuous drain current for IRF7807ATR at 70°C case temperature?

The maximum continuous drain current is 6.6 A at 70°C ambient (not case) temperature with SO-8 mounting on 1-inch² copper board. Derating follows the 50°C/W R_θJA curve; actual current depends on PCB copper area, airflow, and thermal vias. At 70°C junction, ID drops to ~5.2 A under typical 2-layer board conditions.

Does IRF7807ATR support synchronous rectification in buck converters?

Yes-IRF7807ATR is explicitly qualified for synchronous FET use, with low R_DS(on) (25 mΩ), fast body diode (Q_rr = 80 nC), and low Q_oss (16.8 nC). Its dual-source pinout (pins 2 and 3) minimizes source inductance, enabling clean gate drive return and stable operation up to 1 MHz in synchronous buck topologies.

How does the split gate charge (Qgs1/Qgs2) impact gate driver selection?

Q_gs1 = 2.1 nC governs initial turn-on delay; Q_gs2 = 0.76 nC controls current rise time after threshold. Drivers must deliver ≥1.5 A peak current to achieve <20 ns rise time with 17 nC total charge. Low-Q_gs2 reduces Miller plateau duration, allowing faster current ramp and tighter dead-time control in synchronous designs.

Is IRF7807ATR RoHS-compliant and halogen-free?

Yes-IRF7807ATR complies with EU RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The SO-8 package uses matte tin lead finish and green molding compound; full compliance documentation is available via Infineon's product change notices (PCNs) and material declarations.

IRF7807ATR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807ATR FAQ

1.How can I place an order for IRF7807ATR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807ATR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807ATR reliable?

The price and inventory of IRF7807ATR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807ATR is usually 5 days.

3.What payment methods are accepted for IRF7807ATR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807ATR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807ATR?

IRF7807ATR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807ATR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807ATR?

For technical support, including IRF7807ATR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807ATR requirements.

6.How does Aetrix verify that IRF7807ATR is sourced from the original manufacturer or authorized distributors?

All IRF7807ATR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807ATR meets industry standards.

7.What is the process for return or replacement of IRF7807ATR?

All IRF7807ATR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807ATR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807ATR part is unused and in its original packaging.

Return procedure for IRF7807ATR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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