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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807ATRPBF

Name: IRF7807ATRPBF
Brand: Infineon Technologies
SKU: IRF7807ATRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807ATRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807ATRPBF.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7807ATRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET in SO-8 package, optimized as a control FET or synchronous rectifier in mobile DC-DC converters. It features 30 V V_DS, 25 mΩ R_DS(on) at V_GS = 4.5 V, 17 nC total gate charge, 16.8 nC output charge, and operates across –55 °C to 150 °C junction temperature.

For engineers reviewing the IRF7807ATRPBF datasheet, IRF7807ATRPBF pinout, IRF7807ATRPBF application, or IRF7807ATRPBF equivalent, key selection criteria include low Q_gd/Q_gs1 ratio for C_dV/dt immunity in synchronous buck topologies, body diode reverse recovery charge (Q_rr = 80 nC), and thermal resistance (R_θJA = 50 °C/W) under PCB-mounted conditions.

Technical Context

This MOSFET employs HEXFET® technology with split gate charge (Q_gs1 = 2.1 nC, Q_gs2 = 0.76 nC) to minimize switching losses during the Miller plateau region. Its low Q_oss (16.8 nC) and Q_rr (80 nC) reduce cross-conduction and driver-induced shoot-through risk in high-frequency synchronous buck converters.

The device supports dual-role implementation: as a control FET (Q1) where Q_gs2 and Q_gd dominate switching loss, and as a synchronous FET (Q2) where R_DS(on) and body diode Q_rr govern conduction efficiency. Gate threshold voltage is tightly specified at 1.0 V (typ), enabling reliable turn-on with 3.3 V and 5 V gate drive rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 5 V input rail systems and 3.3 V/5 V output DC-DC stages
R_DS(on)	25 mΩ @ V_GS = 4.5 V - Enables ≤100 mW conduction loss at 2 A load current in synchronous rectifier position
Q_g	17 nC - Total gate charge determines driver strength requirement; enables <25 ns turn-off delay with 2 Ω gate resistor
Q_oss	16.8 nC - Output capacitance charge directly impacts switching loss and EMI in hard-switched buck converters
Q_rr	80 nC - Body diode reverse recovery charge affects efficiency and stress on control FET during dead-time transitions
R_θJA	50 °C/W - Thermal resistance measured on 1-inch² copper board; defines maximum continuous power dissipation (1.6 W at 70 °C ambient)
I_D	8.3 A @ 25 °C - Continuous drain current rating supports >5 A load capability in thermally managed mobile power stages

Pinout & Package

IRF7807ATRPBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA outline, with exposed drain pads (pins 1–4 and 6–8) for enhanced thermal performance and source terminals (pins 5 and 6) shared internally.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Common high-current drain connection; pins 1–4 and 6–8 are internally bonded to reduce package inductance and improve thermal spreading
5, 6	Source (S)	Source terminals tied together; pin 5 is primary external source connection; pin 6 provides redundant low-inductance path for return current
5	Gate (G)	Single gate input (pin 5 is gate); requires low-impedance driver to manage 17 nC charge and suppress C_dV/dt turn-on

Key Features

Feature	Design Value
Split gate charge architecture	Q_gs1 = 2.1 nC, Q_gs2 = 0.76 nC - Enables precise timing control of Miller plateau transition to reduce switching loss in control FET role
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.1 nC ≈ 1.38 - Minimizes susceptibility to C_dV/dt induced turn-on in synchronous FET position
Optimized body diode	Q_rr = 80 nC, V_SD = 1.2 V @ I_S = 7 A - Reduces recovery-related losses and cross-conduction stress in high-frequency buck converters
Lead-free SO-8 package	RoHS-compliant, JEDEC MS-012AA footprint - Ensures drop-in compatibility with existing 5 V/3.3 V converter layouts and reflow profiles

Applications

Mobile PC Voltage Regulator Module (VRM)

USB-C PD 5 V/3.3 V Buck Converter

Use Scenario: Dual-phase 5 V input to 1.2 V output VRM powering Intel Core i-series microprocessors in ultrabooks.

IC Role / Device Role: Paired IRF7807ATRPBF devices serve as both control FET (Q1) and synchronous FET (Q2) in each phase leg.

Use Value: Identical R_DS(on) and Q_g enable matched timing and reduced BOM count; achieves >94% peak efficiency at 5 A load (Fig 4).

Use Scenario: Single-phase 9–20 V USB-C PD input stepped down to stable 5 V/3.3 V rails for portable SSDs and dongles.

IC Role / Device Role: Used as synchronous rectifier (Q2) with external controller driving Q1; leverages low Q_rr to maintain regulation under dynamic load transients.

Use Value: 80 nC Q_rr limits reverse recovery energy dissipation, enabling stable 500 kHz operation without snubbers or parallel Schottky diodes.

Industrial IoT Sensor Node Power Supply

Automotive Infotainment Core Rail

Use Scenario: 12 V battery input converted to 3.3 V for ARM Cortex-M7 MCU, RF transceiver, and analog sensors in sealed enclosures.

IC Role / Device Role: Deployed as control FET (Q1) with 4.5 V gate drive from integrated PWM controller; benefits from 1.0 V V_GS(th) for robust start-up.

Use Value: Tight V_GS(th) distribution ensures consistent turn-on across –40 °C to 105 °C, eliminating cold-start failures in outdoor deployments.

Use Scenario: 5 V core supply for display processor and audio codec in automotive head unit, operating under ISO 7637-2 pulse load conditions.

IC Role / Device Role: Functions as synchronous FET (Q2) in 12 V → 5 V buck stage; relies on low R_DS(on) and high T_J(max) = 150 °C rating.

Use Value: 25 mΩ R_DS(on) sustains <120 mW conduction loss at 2 A, meeting ASIL-B thermal derating requirements without heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP-T1-GE3	R_DS(on) = 22 mΩ @ 4.5 V, Q_g = 15.5 nC, Q_oss = 14.5 nC - Slightly lower conduction and switching loss	SO-8 footprint identical; optimized for 3.3 V gate drive but less tolerant of 12 V transients on gate	Select when gate drive is strictly regulated ≤4.5 V and layout minimizes dV/dt coupling
DMN3025LFG-7	R_DS(on) = 25 mΩ @ 4.5 V, Q_g = 18.5 nC, Q_oss = 19.2 nC - Higher Q_g and Q_oss increase driver loss and EMI	Same SO-8 package; higher Q_rr (95 nC) increases cross-conduction risk in light-load DCM mode	Acceptable for cost-sensitive designs where efficiency >90% is sufficient and gate drive strength ≥2 A is available

Compared with Si7842DP-T1-GE3 and DMN3025LFG-7, IRF7807ATRPBF offers balanced Q_gs2/Q_gd ratio for C_dV/dt immunity and verified 80 nC Q_rr performance in mobile VRMs-making it preferred for compact, high-efficiency 3.3 V/5 V synchronous buck stages where gate drive margin and body diode behavior are critical.

Availability

IRF7807ATRPBF is available at Aetrix Electronics and suitable for mobile PC VRMs, USB-C PD power adapters, and industrial sensor node power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF7807ATRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space-constrained mobile and portable electronics.

FAQ

What is the maximum safe operating voltage for IRF7807ATRPBF in a synchronous buck converter?

The absolute maximum drain-source voltage is 30 V, but for reliable operation in synchronous buck topologies, the input voltage must remain ≤24 V to maintain sufficient voltage margin against transient spikes and ensure gate oxide integrity. At 24 V input, the device retains 20% overvoltage headroom while supporting common 5 V and 3.3 V output rails.

Can IRF7807ATRPBF be used as both control and synchronous FET in the same design?

Yes-application notes confirm identical IRF7807ATRPBF units can serve as both Q1 (control FET) and Q2 (synchronous FET) in 3.3 V and 5 V converters. This is enabled by balanced R_DS(on), Q_g, and Q_oss, reducing BOM complexity and improving phase matching in multi-phase VRMs without sacrificing efficiency.

Does IRF7807ATRPBF require a gate resistor, and what value is recommended?

A gate resistor is required to dampen ringing and control slew rate. For 500 kHz operation with a 2 A peak gate driver, a 2 Ω resistor is validated in reference designs to achieve td(off) = 25 ns and limit overshoot. Lower values (<1 Ω) increase EMI risk; higher values (>5 Ω) degrade efficiency due to prolonged Miller plateau time.

How does the body diode forward voltage affect performance in discontinuous conduction mode (DCM)?

V_SD = 1.2 V at 7 A ensures low forward conduction loss during dead-time conduction, but its 80 nC Q_rr dominates energy loss during reverse recovery. In DCM, this causes measurable efficiency drop below 20% load unless actively managed via adaptive dead-time control or valley switching techniques.

IRF7807ATRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807ATRPBF FAQ

1.How can I place an order for IRF7807ATRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807ATRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807ATRPBF reliable?

The price and inventory of IRF7807ATRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807ATRPBF is usually 5 days.

3.What payment methods are accepted for IRF7807ATRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807ATRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807ATRPBF?

IRF7807ATRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807ATRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807ATRPBF?

For technical support, including IRF7807ATRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807ATRPBF requirements.

6.How does Aetrix verify that IRF7807ATRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7807ATRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807ATRPBF meets industry standards.

7.What is the process for return or replacement of IRF7807ATRPBF?

All IRF7807ATRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807ATRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807ATRPBF part is unused and in its original packaging.

Return procedure for IRF7807ATRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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