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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807D1

Name: IRF7807D1
Brand: Infineon Technologies
SKU: IRF7807D1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807D1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807D1.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:8,301

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Product details

Overview

IRF7807D1 from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET MOSFET and integrated Schottky diode in a single SO-8 package, rated for 30 V V_DS, 8.3 A continuous drain current at 25°C, and 25 mΩ R_DS(on) at V_GS = 4.5 V. It serves as a synchronous rectifier in DC-DC converters up to 5 A output, delivering low conduction and switching losses in portable power management.

For engineers reviewing the IRF7807D1 datasheet, IRF7807D1 pinout, IRF7807D1 application, or IRF7807D1 equivalent, key selection criteria include its dual-device integration (MOSFET + Schottky), 0.39 V forward voltage at 1 A/125°C, 51 ns reverse recovery time, and SO-8 thermal performance with R_θJA = 50°C/W on 1-inch² copper board.

Technical Context

This device implements a monolithic co-pack architecture where the N-channel MOSFET and Schottky diode share source and drain terminals in a common-source configuration, enabling true synchronous rectification without external diode placement. Its gate threshold voltage of 1.0 V allows direct drive from 3.3 V logic controllers.

The SO-8 package uses a customized leadframe to enhance thermal dissipation, supporting vapor-phase, infrared, and wave soldering. The integrated Schottky exhibits 48 nC Q_rr and negligible intrinsic turn-on delay-critical for high-frequency (>500 kHz) buck converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5 V–12 V input DC-DC stages
R_DS(on)	25 mΩ @ V_GS = 4.5 V - Enables ≤210 mW conduction loss at 7 A load
V_SD	0.39 V @ I_S = 1 A, T_j = 125°C - Low forward drop reduces diode-mode power loss during dead-time
Q_g	14 nC @ V_DS < 100 mV - Optimized gate charge for fast, low-loss switching in synchronous FET mode
trr	51 ns - Minimizes reverse recovery energy loss during high-frequency transitions
R_θJA	50°C/W on 1 inch² copper - Supports 1.6 W power dissipation at 70°C ambient without heatsink
I_D	8.3 A @ 25°C - Sustains peak currents in 5 A-class point-of-load regulators

Pinout & Package

IRF7807D1 is housed in a modified SO-8 package with enhanced thermal leadframe, compliant with EIA-481/EIA-541 tape-and-reel standards and qualified for vapor-phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET & Schottky)	Common source node; electrically tied internally; used for low-impedance return path and thermal sinking
5, 6, 7	Drain (MOSFET & Schottky)	Common drain node; shared high-side connection for both devices; handles full output current
8	Gate	Control terminal for MOSFET channel; isolated from Schottky; requires < ±12 V rating

Key Features

Feature	Design Value
Co-pack MOSFET + Schottky	Single SO-8 footprint replaces discrete MOSFET + external Schottky, saving ≥30% PCB area
Low V_SD diode	0.39 V forward drop at 1 A/125°C enables >95% efficiency in 3.3 V output buck converters
Fast trr & low Q_rr	51 ns / 48 nC ensures minimal switching loss during body/Schottky commutation in 1–2 MHz designs
Logic-level gate drive	V_GS(th) = 1.0 V supports direct interface with 3.3 V microcontrollers and PWM controllers

Applications

USB-C Power Delivery Adapter

Smartphone PMIC Secondary Side

Use Scenario: 5 V–20 V input, 3.3 V/5 A output buck converter in compact USB-C wall adapters.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode at 600 kHz.

Use Value: Integrated Schottky eliminates external diode BOM line and reduces thermal hotspot risk at 5 A load.

Use Scenario: Point-of-load regulation for application processor core rails in mobile SoC power trees.

IC Role / Device Role / Timing Role: Secondary-side switch in multiphase buck with interleaved gate timing.

Use Value: 25 mΩ R_DS(on) and 14 nC Q_g enable high-efficiency operation under dynamic load transients.

Wireless Charging Transmitter

Industrial IoT Sensor Node PSU

Use Scenario: 12 V input, 5 V/3 A output DC-DC stage powering Qi-compliant transmitter coil drivers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in half-bridge LLC secondary.

Use Value: 51 ns trr and 0.39 V V_SD minimize dead-time conduction loss and improve light-load efficiency.

Use Scenario: Battery-backed 3.3 V supply for LoRaWAN edge nodes with intermittent 100 mA peak loads.

IC Role / Device Role / Timing Role: Low-quiescent-current synchronous rectifier in flyback-derived buck topology.

Use Value: –55°C to 150°C junction range ensures reliability in uncontrolled outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	30 V, 10 A, R_DS(on) = 18 mΩ @ 4.5 V; no integrated Schottky	Requires external Schottky diode; higher layout complexity and BOM count	Preferred when lower R_DS(on) outweighs co-pack integration benefits
DMN3025LSD-13	30 V, 7.5 A, R_DS(on) = 25 mΩ @ 4.5 V; dual-N with independent sources	Separate MOSFETs allow asymmetric drive; no Schottky diode function	Chosen for designs needing independent control of high- and low-side switches

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7807D1 uniquely integrates Schottky functionality in a single SO-8 footprint-reducing component count and layout area while maintaining competitive R_DS(on) and thermal resistance for space-constrained 5 A DC-DC applications.

Availability

IRF7807D1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smartphone PMIC secondary sides, wireless charging transmitters, and industrial IoT sensor node PSUs requiring stable component supply across production lifecycles.

Supply support for IRF7807D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon-based power solutions.

The FETKY™ product line was developed specifically for high-efficiency, space-constrained DC-DC conversion-targeting portable electronics, battery-powered systems, and multi-rail PMIC architectures where board area and thermal density are critical.

FAQ

What is the maximum continuous drain current for IRF7807D1 at 70°C ambient?

The maximum continuous drain current is 6.6 A at 70°C ambient temperature, derated from 8.3 A at 25°C per the absolute maximum ratings table. This value assumes mounting on a 1-inch² copper board with R_θJA = 50°C/W and accounts for junction temperature limits up to 150°C.

Can IRF7807D1 be used as a standalone Schottky diode without gate drive?

Yes-the integrated Schottky diode operates independently of the MOSFET gate. With gate floating or grounded, the device functions as a 30 V, 3.5 A average forward current Schottky rectifier, exhibiting V_SD = 0.5 V at 1 A/25°C and 0.39 V at 1 A/125°C, with 51 ns reverse recovery time.

Is IRF7807D1 RoHS compliant and halogen-free?

Yes-IRF7807D1 meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The SO-8 package uses matte tin plating over copper leadframe, and all materials comply with Infineon's standard environmental specifications as documented in the official product change notice PCN-19-0027.

What is the recommended gate resistor value for 1 MHz switching in a synchronous buck?

A 4.7 Ω series gate resistor is recommended to balance switching speed and ringing suppression. With Q_g = 14 nC and typical driver output impedance of ~2 Ω, this yields ~35 ns rise/fall times-sufficient for 1 MHz operation while limiting dV/dt-induced shoot-through risk in hard-switched topologies.

IRF7807D1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807D1 FAQ

1.How can I place an order for IRF7807D1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807D1 reliable?

The price and inventory of IRF7807D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807D1 is usually 5 days.

3.What payment methods are accepted for IRF7807D1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807D1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807D1?

IRF7807D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807D1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807D1?

For technical support, including IRF7807D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807D1 requirements.

6.How does Aetrix verify that IRF7807D1 is sourced from the original manufacturer or authorized distributors?

All IRF7807D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807D1 meets industry standards.

7.What is the process for return or replacement of IRF7807D1?

All IRF7807D1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807D1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807D1 part is unused and in its original packaging.

Return procedure for IRF7807D1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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