Infineon Technologies IRF7807D1PBF

Overview

IRF7807D1PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET® power MOSFET and integrated Schottky diode in a single SO-8 package. It delivers 30 V V_DS, 25 mΩ R_DS(on) at V_GS = 4.5 V, 8.3 A continuous drain current, and 0.39 V forward voltage at 1 A/125°C - optimized for synchronous rectification in compact DC-DC converters up to 5 A output.

For engineers reviewing the IRF7807D1PBF datasheet, IRF7807D1PBF pinout, IRF7807D1PBF application, or IRF7807D1PBF equivalent, key selection criteria include low-conduction-loss MOSFET operation with integrated low-V_f Schottky diode, thermal performance under pulsed load conditions, and SO-8 leadframe-enhanced junction-to-ambient resistance (50°C/W).

Technical Context

This FETKY™ device integrates a logic-level N-channel MOSFET and a Schottky diode on a shared die substrate within a modified SO-8 package. The MOSFET features a 14 nC total gate charge (Q_g) and 2.9 nC gate-to-drain charge (Q_gd), enabling fast switching with minimal Miller effect. The Schottky diode exhibits 51 ns reverse recovery time (t_rr) and 48 nC reverse recovery charge (Q_rr) at 7 A, supporting high-frequency synchronous rectification.

The co-pack architecture eliminates external diode placement and parasitic inductance, reducing conduction loss and improving efficiency in buck converter secondary-side rectification. Thermal design leverages the enhanced SO-8 leadframe for improved heat dissipation, with R_θJA rated at 50°C/W on standard PCB mounting.

Key Specifications

Pinout & Package

IRF7807D1PBF uses a modified SO-8 package with enhanced thermal leadframe per JEDEC MS-012AA. The package supports vapor phase, infrared, and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Compared with Si7842DP-T1-GE3 and IRF7832TRPBF, IRF7807D1PBF trades 12–15 mΩ lower R_DS(on) for guaranteed matched MOSFET/diode timing and reduced BOM count - ideal for space-constrained, mid-power synchronous rectifiers where layout simplicity and thermal predictability outweigh absolute conduction loss minimization.

Availability

IRF7807D1PBF is available at Aetrix Electronics and suitable for USB-C PD adapters, point-of-load converters, portable SSD power rails, and wireless charging receivers requiring stable component supply across production lifecycles.

Supply support for IRF7807D1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The FETKY™ product line was developed specifically for high-efficiency, space-constrained DC-DC conversion - integrating complementary MOSFET and Schottky technologies to eliminate layout compromises in synchronous rectifier designs.

FAQ

What is the maximum safe operating junction temperature for IRF7807D1PBF?

The absolute maximum junction temperature is 150°C, and the device is rated for continuous operation up to this limit. Derating begins at 70°C ambient when mounted on a 1-inch² copper board, with thermal resistance R_θJA = 50°C/W. Operation above 125°C requires careful thermal modeling of PCB copper area and airflow.

Can IRF7807D1PBF be used in reverse polarity protection circuits?

No - the integrated Schottky diode is oriented cathode-to-drain, making it unsuitable for reverse polarity protection. Its internal structure supports only forward conduction from source to drain (body diode) or source to cathode (Schottky), not reverse blocking between drain and source.

Is the gate threshold voltage stable across temperature for IRF7807D1PBF?

Yes - V_GS(th) is specified from 1.0 V (min) to 2.5 V (max) at 25°C, and decreases linearly with rising temperature. At 125°C, typical V_GS(th) drops to ~0.7 V, maintaining reliable turn-on with 3.3 V gate drive across the full –55°C to 150°C junction range.

Does IRF7807D1PBF require a gate resistor for stability in high-frequency switching?

A small gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd and gate capacitance. Without it, overshoot exceeding ±12 V V_GS rating may occur at >300 kHz, risking gate oxide degradation over time.