Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807D1TR

Name: IRF7807D1TR
Brand: Infineon Technologies
SKU: IRF7807D1TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7807D1TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807D1TR.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7807D1TR from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET MOSFET and integrated Schottky diode in a single SO-8 package, designed for synchronous rectification in DC-DC converters up to 5 A output. It features 30 V V_DS, 25 mΩ R_DS(on) at V_GS = 4.5 V, 14 nC total gate charge, 0.39 V Schottky forward voltage at 1 A/125°C, and operates from –55°C to 150°C junction temperature.

For engineers reviewing the IRF7807D1TR datasheet, IRF7807D1TR pinout, IRF7807D1TR application, or IRF7807D1TR equivalent, key selection criteria include low-conduction-loss synchronous FET operation, integrated Schottky body diode with fast reverse recovery (51 ns), thermal performance on copper PCBs (R_θJA = 50°C/W), and SO-8 leadframe optimization for power management in space-constrained portable electronics.

Technical Context

This device integrates a logic-level N-channel MOSFET and a low-V_F Schottky diode in one die-cast SO-8 package, enabling self-commutated synchronous rectification without external diode placement. Its 1.0 V gate threshold and 4.5 V rated R_DS(on) support direct drive from standard PWM controllers.

The co-pack architecture eliminates parasitic inductance between MOSFET and diode, reducing switching losses and EMI. Reverse recovery charge Q_rr is 48 nC with 100 A/µs di/dt, and body diode conduction is minimized by fast turn-on via low Q_gd (2.9 nC) and optimized gate charge partitioning.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5 V–12 V input DC-DC stages
R_DS(on)	25 mΩ @ V_GS = 4.5 V - Enables ≤125 mW conduction loss at 7 A continuous
Q_g	14 nC @ V_DS < 100 mV - Optimized for high-frequency synchronous rectifier gate drive efficiency
V_SD	0.39 V @ I_S = 1 A, T_j = 125°C - Low forward drop reduces diode-mode power dissipation
t_rr	51 ns - Fast recovery minimizes shoot-through risk during dead-time transitions
R_θJA	50°C/W on 1″² copper - Enables 1.6 W continuous dissipation at 70°C ambient
I_D	8.3 A @ 25°C - Supports peak currents in buck converter output stage with margin

Pinout & Package

IRF7807D1TR uses an enhanced thermal SO-8 package with customized leadframe for improved power dissipation. The package conforms to EIA-481/EIA-541 tape-and-reel standards and supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET & Diode)	Common source node; electrically tied to cathode of integrated Schottky diode
5, 6, 7, 8	Drain (MOSFET) / Anode (Schottky)	Shared drain/anode terminal; carries main current path in both MOSFET and diode modes
G (Pin 3 only)	Gate	Logic-level gate input; pin 3 is dedicated gate connection; pins 1–2 & 4 are source-only

Key Features

Feature	Design Value
Co-pack MOSFET + Schottky	Eliminates board layout mismatch and trace inductance between switch and freewheeling diode
Low R_DS(on) at 4.5 V	Enables direct interface with 5 V or 3.3 V PWM controllers without level-shifting
Low V_SD Schottky	Reduces forward conduction loss by ~40% vs. standard silicon body diode at 1 A
Optimized Q_gd/Q_gs	2.9 nC gate-to-drain charge enables clean Miller plateau control during hard switching
Enhanced SO-8 thermal leadframe	Improves heat transfer to PCB copper, supporting higher sustained current in compact designs

Applications

Point-of-Load DC-DC Converter

Laptop CPU/GPU VRM

Use Scenario: High-efficiency 12 V to 1.2 V step-down conversion delivering up to 5 A to microprocessor cores.

IC Role / Device Role: Synchronous rectifier FET replacing external Schottky diode in buck converter output stage.

Use Value: Reduces conduction loss by 35% vs. discrete diode solution and lowers thermal footprint via integrated topology.

Use Scenario: Multi-phase VRM supplying dynamic load currents up to 30 A with tight voltage regulation.

IC Role / Device Role: Low-R_DS(on) sync FET operating in parallel per phase, leveraging fast t_rr for minimal dead-time penalty.

Use Value: Enables >92% efficiency at 12 V input and 1.0 V output while maintaining <10°C junction rise under full load.

USB-C PD Power Delivery Module

Portable SSD Power Management

Use Scenario: 20 V to 5 V/9 V/15 V buck conversion in compact USB-C PD adapters with size constraints.

IC Role / Device Role: Primary synchronous rectifier in secondary-side regulation, driven by isolated controller feedback.

Use Value: Integrated Schottky allows elimination of discrete diode, saving 2.5 mm² board area and improving EMI signature.

Use Scenario: 5 V to 3.3 V LDO replacement in NVMe SSD power rail with burst-mode current demands.

IC Role / Device Role: High-efficiency buck sync FET handling pulsed 6 A loads with minimal voltage droop.

Use Value: 25 mΩ R_DS(on) and 14 nC Q_g enable stable 1 MHz operation with <10 mV output ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	30 V, 2.9 mΩ R_DS(on) @ 10 V, 28 nC Q_g, no integrated Schottky	Requires external Schottky; better for high-current (>10 A), high-frequency (>2 MHz) designs	Select when lower R_DS(on) outweighs integration benefit and board space permits discrete diode
DMN3022LSD-13	30 V, 22 mΩ R_DS(on) @ 4.5 V, 12.5 nC Q_g, dual-N with common-source but no Schottky	Not co-packaged; requires separate diode; optimized for dual-phase interleaved topologies	Choose for cost-sensitive dual-FET layouts where Schottky integration is not required

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7807D1TR uniquely delivers integrated Schottky functionality in a logic-level SO-8, making it optimal for space-limited, medium-current (<7 A), sub-2 MHz synchronous rectifier applications where layout simplicity and EMI reduction are prioritized over ultra-low R_DS(on).

Availability

IRF7807D1TR is available at Aetrix Electronics and suitable for point-of-load DC-DC converters, laptop VRMs, and USB-C PD modules requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for IRF7807D1TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The FETKY™ product line was developed specifically for high-efficiency, board-space-constrained DC-DC conversion in portable and battery-powered systems, combining optimized MOSFETs and Schottky diodes into thermally enhanced packages.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7807D1TR supports 6.6 A continuous drain current at 70°C ambient when mounted on a standard 1 inch² copper PCB, based on its 1.6 W power dissipation rating and 50°C/W junction-to-ambient thermal resistance. This value assumes proper PCB copper area and no forced airflow.

Can IRF7807D1TR be used as a standalone Schottky diode?

Yes - the integrated Schottky diode operates independently when the MOSFET gate is held at 0 V. With V_SD = 0.39 V at 1 A/125°C and t_rr = 51 ns, it performs as a low-loss freewheeling element in non-synchronous or bootstrap-gated configurations.

Is the SO-8 package lead-free and RoHS compliant?

Yes - IRF7807D1TR is manufactured in a lead-free, RoHS-compliant SO-8 package per Infineon's standard qualification. The device meets JEDEC J-STD-020 moisture sensitivity level 1 and is rated for standard reflow profiles including IPC/JEDEC J-STD-020.

How does the co-pack structure affect PCB layout versus discrete solutions?

The co-pack design eliminates routing between MOSFET drain and Schottky anode, removing up to 1.2 nH of parasitic inductance. This reduces voltage spikes during switching, simplifies layout, and allows tighter placement near the inductor - critical for EMI-sensitive portable applications.

IRF7807D1TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807D1TR FAQ

1.How can I place an order for IRF7807D1TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807D1TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807D1TR reliable?

The price and inventory of IRF7807D1TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807D1TR is usually 5 days.

3.What payment methods are accepted for IRF7807D1TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807D1TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807D1TR?

IRF7807D1TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807D1TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807D1TR?

For technical support, including IRF7807D1TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807D1TR requirements.

6.How does Aetrix verify that IRF7807D1TR is sourced from the original manufacturer or authorized distributors?

All IRF7807D1TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807D1TR meets industry standards.

7.What is the process for return or replacement of IRF7807D1TR?

All IRF7807D1TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807D1TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807D1TR part is unused and in its original packaging.

Return procedure for IRF7807D1TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.