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Infineon Technologies IRF7807D1TRPBF
- Part No.:
- IRF7807D1TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7807D1TRPBF.pdf
- Description:
- MOSFET N-CH 30V 8.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,149
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Product details
Overview
IRF7807D1TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET® power MOSFET and integrated Schottky diode in a single SO-8 package, designed for synchronous rectification in DC-DC converters up to 5 A output. It features 30 V VDS, 25 mΩ RDS(on) at VGS = 4.5 V, 14 nC total gate charge, and low 0.39 V forward voltage at 1 A and 125°C.
For engineers reviewing the IRF7807D1TRPBF datasheet, IRF7807D1TRPBF pinout, IRF7807D1TRPBF application, or IRF7807D1TRPBF equivalent, key selection criteria include synchronous FET conduction loss, body/Schottky diode reverse recovery performance (trr = 51 ns), thermal resistance (RθJA = 50°C/W), and SO-8 leadframe-enhanced thermal capability for high-density portable power designs.
Technical Context
This device integrates two functionally independent silicon dies - a logic-level N-channel MOSFET optimized for low RDS(on) and fast switching (Qsw = 5.2 nC), and a low-Vf Schottky diode with 48 nC Qrr and 51 ns trr. Both share common source and drain terminals but operate independently under control of external gate drive and current polarity.
The SO-8 package uses a customized leadframe to reduce junction-to-ambient thermal resistance to 50°C/W, enabling higher continuous current (6.6 A at 70°C) without heatsinking. The device is rated for operation from –55°C to +150°C junction temperature and supports vapor-phase, infrared, and wave soldering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 5 V–12 V input DC-DC stages |
| RDS(on) | 25 mΩ @ VGS = 4.5 V - Enables ≤125 mW conduction loss at 7 A load current |
| Qg | 14 nC - Gate drive energy requirement compatible with standard PWM controllers |
| VSD | 0.39 V @ Tj = 125°C, IS = 1 A - Low forward drop reduces diode conduction loss in light-load conditions |
| trr | 51 ns - Fast reverse recovery minimizes switching loss and EMI in hard-switched topologies |
| RθJA | 50°C/W - Thermal performance allows 6.6 A continuous current on 1-inch² copper board |
| ID | 8.3 A @ 25°C - Continuous drain current rating defines safe operating area at ambient temperature |
Pinout & Package
IRF7807D1TRPBF is housed in a modified SO-8 package with enhanced thermal leadframe per JEDEC MS-012AA. The package supports vapor-phase, infrared, and wave soldering and provides improved heat dissipation over standard SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (MOSFET & Diode Common) | Shared low-side return path for both devices; connects to ground or output rail in buck/synchronous buck converters |
| 5, 6, 7, 8 | Drain (MOSFET & Diode Common) | Shared high-side node; ties to inductor output or input rail; carries bidirectional current during switching cycles |
| Gate (Pin 1 not used for gate; see note) | Control Input (MOSFET only) | Pin 1 is Source; Gate is internal to die - no dedicated gate pin; gate connection is via bond wire to die surface, accessible only through PCB layout routing to designated gate pad (not pin-labeled) |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged MOSFET + Schottky diode | Reduces board space by eliminating discrete diode placement and associated trace inductance |
| Logic-level gate drive (VGS(th) = 1.0 V) | Enables direct drive from 3.3 V or 5 V microcontrollers or PWM ICs without level-shifting |
| Low Qoss (18.4 nC) | Minimizes turn-off energy loss and improves efficiency in high-frequency (>500 kHz) DC-DC converters |
| Enhanced SO-8 thermal leadframe | Lowers RθJA by ~20% vs. standard SO-8, supporting higher power density in portable applications |
| Lead-free and RoHS-compliant | Meets global environmental compliance requirements for consumer electronics manufacturing |
Applications
| USB-C Power Delivery Adapter | Point-of-Load Converter in Laptops |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 20–65 W USB-C PD adapters operating at 200–500 kHz switching frequency. IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diode to reduce conduction loss and improve efficiency above 90%. Use Value: 0.39 V VSD at 125°C enables ≥0.5% efficiency gain over discrete 40 V Schottky at full load, validated per DOE Level VI requirements. | Use Scenario: 3.3 V/5 V point-of-load (POL) converter supplying CPU core logic or memory subsystems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck topology, driven by controller's complementary output. Use Value: 25 mΩ RDS(on) limits I²R loss to <100 mW at 2 A, supporting thermally constrained thin-profile laptop chassis. |
| Wireless Charging Transmitter | Industrial IoT Sensor Node PSU |
Use Scenario: Output rectification stage in resonant wireless charging transmitter operating at 100–200 kHz. IC Role / Device Role / Timing Role: Bidirectional switch handling reverse recovery during zero-voltage switching transitions. Use Value: 51 ns trr and 48 nC Qrr suppress voltage overshoot and reduce EMI, enabling FCC Class B compliance without added snubbers. | Use Scenario: Compact 12 V to 3.3 V isolated DC-DC module powering ultra-low-power sensor nodes with 10-year battery life. IC Role / Device Role / Timing Role: Primary-side active clamp or secondary-side rectifier depending on topology choice (flyback or forward). Use Value: –55°C to +150°C operating range ensures reliability in uncontrolled industrial environments; SO-8 footprint simplifies automated assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 30 V, 2.8 mΩ RDS(on) @ 10 V, 22 nC Qg, dual N-channel (no diode) | Requires external Schottky diode; lower RDS(on) but higher gate drive demand | Select when lowest conduction loss is critical and board space allows discrete diode placement |
| DMN3025LFG-7 | 30 V, 2.5 mΩ RDS(on) @ 10 V, 16 nC Qg, single N-channel with no integrated diode | No integrated diode; requires separate rectification path; higher peak efficiency but more complex layout | Prefer for high-efficiency, high-current (>8 A) designs where thermal management permits discrete integration |
Compared with Si7852DP-T1-GE3 and DMN3025LFG-7, IRF7807D1TRPBF trades slightly higher RDS(on) for board-area savings and simplified layout via monolithic co-packaging - ideal for space-constrained, medium-power (<6 A), cost-sensitive consumer applications.
Availability
IRF7807D1TRPBF is available at Aetrix Electronics and suitable for USB-C power adapters, laptop point-of-load converters, wireless charging transmitters, and industrial IoT sensor node power supplies requiring stable component supply and long-term manufacturability.
Supply support for IRF7807D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
This device belongs to Infineon's FETKY™ family - engineered specifically for high-efficiency, space-constrained DC-DC conversion in portable and battery-powered electronics where integrated MOSFET-diode co-packaging delivers measurable board-area and thermal advantages.
FAQ
What is the maximum continuous drain current for IRF7807D1TRPBF at 70°C ambient?
The maximum continuous drain current is 6.6 A at 70°C ambient temperature when mounted on a 1-inch² copper board, as specified in the Absolute Maximum Ratings table. This value assumes no additional heatsinking and accounts for thermal derating due to junction-to-ambient resistance of 50°C/W.
Does IRF7807D1TRPBF have a dedicated gate pin?
No - IRF7807D1TRPBF does not expose a dedicated gate pin. The gate is internally bonded to the die surface and accessed only via the PCB layout's gate pad; pins 1–4 are all Source, and pins 5–8 are all Drain. Gate drive must be routed externally to the designated gate pad adjacent to the SO-8 outline.
Can IRF7807D1TRPBF replace a discrete MOSFET + Schottky diode pair in existing designs?
Yes - it is a direct functional replacement for discrete combinations in synchronous rectifier applications. Layout changes are required: consolidate source/drain connections across four pins each, remove discrete diode footprint, and route gate signal to the internal gate pad. No change to gate drive voltage or timing is needed.
What is the typical reverse recovery charge (Qrr) of the integrated Schottky diode?
The typical reverse recovery charge is 48 nC, measured at Tj = 25°C, IS = 7.0 A, VDS = 16 V, and di/dt = 100 A/µs. This low Qrr contributes to reduced switching loss and EMI in hard-switched topologies compared to standard body diodes.
IRF7807D1TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7807D1TRPBF FAQ
1.How can I place an order for IRF7807D1TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7807D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7807D1TRPBF reliable?
The price and inventory of IRF7807D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807D1TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7807D1TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807D1TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7807D1TRPBF?
IRF7807D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7807D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7807D1TRPBF?
For technical support, including IRF7807D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807D1TRPBF requirements.
6.How does Aetrix verify that IRF7807D1TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7807D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807D1TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7807D1TRPBF?
All IRF7807D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807D1TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7807D1TRPBF part is unused and in its original packaging.
Return procedure for IRF7807D1TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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