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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807D2PBF

Name: IRF7807D2PBF
Brand: Infineon Technologies
SKU: IRF7807D2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807D2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807D2PBF.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7807D2PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET® power MOSFET and integrated Schottky diode in a single SO-8 package, designed specifically for synchronous rectification in DC-DC converters up to 5 A output. It features 30 V V_DS, 25 mΩ R_DS(on) at V_GS = 4.5 V, 14 nC total gate charge, 0.54 V Schottky forward voltage at 3 A/25°C, and thermal resistance R_θJA of 50 °C/W on standard PCB mounting.

For engineers reviewing the IRF7807D2PBF datasheet, IRF7807D2PBF pinout, IRF7807D2PBF application in synchronous buck converters, or IRF7807D2PBF equivalent for low-loss secondary-side rectification, this page delivers verified electrical parameters, validated terminal roles, thermal performance data, and real-world design context for portable power management systems.

Technical Context

The IRF7807D2PBF integrates a logic-level N-channel MOSFET and a low-V_f Schottky diode in a monolithic SO-8 FETKY™ package with modified leadframe for improved thermal conduction. Its dual-device architecture enables self-synchronous operation where the MOSFET body diode and Schottky diode share current paths during reverse recovery transitions.

It operates with gate threshold voltage V_GS(th) = 1.0 V (min), supports control with 4.5 V logic-level drive, and delivers Q_SW = 5.2 nC and Q_oss = 21.6 nC at V_DS = 16 V - enabling high-frequency switching (>500 kHz) while minimizing turn-on loss and capacitive discharge energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input DC-DC stages.
R_DS(on)	25 mΩ @ V_GS = 4.5 V, I_D = 7 A - Enables <175 mW conduction loss at 5 A continuous load.
Q_g	14 nC - Total gate charge determines driver strength requirement; compatible with low-power PWM controllers.
V_SD	0.54 V @ I_S = 3 A, T_j = 25°C - Low Schottky forward drop reduces rectifier loss vs. standard silicon diodes.
R_θJA	50 °C/W - Measured on 1-inch² copper board; defines thermal derating for ambient-limited designs.
I_F(AV)	3.7 A @ 25°C - Average forward current rating for Schottky diode portion under continuous conduction mode.
t_rr	36 ns - Reverse recovery time ensures minimal shoot-through risk in synchronous rectifier timing windows.

Pinout & Package

IRF7807D2PBF uses an SO-8 (FETKY™) package with enhanced thermal leadframe per JEDEC MS-012AA. The package supports vapor phase, infrared, and wave soldering, and is lead-free (RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET & Schottky)	Common source node for both devices; connects to output ground or return path in buck converter.
5, 6, 7, 8	Drain (MOSFET) / Cathode (Schottky)	Shared drain/cathode node; ties to switch node in synchronous rectifier configuration.
Gate (Pin 1 only active)	MOSFET Gate Control	Single gate input; pins 1–4 are internally connected source, so gate must be driven relative to common source.

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates board space and parasitic inductance between discrete rectifier and switch; improves EMI and layout compactness.
Logic-level gate drive	V_GS(th) = 1.0 V min enables direct interface with 3.3 V or 5 V PWM controllers without level-shifting.
Low Q_SW/Q_oss	Q_SW = 5.2 nC and Q_oss = 21.6 nC reduce switching loss and improve light-load efficiency in high-frequency converters.
Thermally optimized SO-8	Modified leadframe lowers R_θJA by ~20% vs. standard SO-8; supports higher power density in space-constrained portable designs.
100% tested R_DS(on) & V_SD	Guaranteed parametric screening ensures consistent conduction loss and forward voltage across production lots.

Applications

USB-C Power Delivery Adapter

Point-of-Load DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 20–65 W USB-C PD adapters operating at 300–600 kHz.

IC Role / Device Role / Timing Role: Replaces secondary-side Schottky diode; MOSFET is actively driven by controller to conduct during freewheeling phase.

Use Value: Reduces rectifier conduction loss by >40% vs. 40 V Schottky, enabling >94% peak efficiency at 5 A output.

Use Scenario: Output stage of 12 V-to-3.3 V/5 A buck converter powering FPGA I/O banks in industrial edge controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in continuous conduction mode (CCM); body diode and Schottky jointly manage reverse recovery.

Use Value: Maintains <1.5 °C junction rise at full load due to low R_DS(on) and optimized thermal path.

Wireless Charging Transmitter

Portable Medical Monitor Power Supply

Use Scenario: High-efficiency 5 V/3 A output stage in Qi-compliant wireless charging transmitter with tight thermal envelope.

IC Role / Device Role / Timing Role: Low-V_f Schottky handles initial reverse recovery; MOSFET conducts majority of freewheeling current.

Use Value: Enables 100% duty-cycle capability during burst-mode operation without thermal runaway.

Use Scenario: Battery-backed 5 V/2 A isolated DC-DC module in handheld ECG monitor requiring ultra-low standby loss.

IC Role / Device Role / Timing Role: Synchronous rectifier in flyback secondary; Schottky clamps leakage spikes during MOSFET turn-off.

Use Value: Achieves <10 µA no-load input current via minimized body diode conduction and fast trr.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP-T1-GE3	30 V, 12 mΩ R_DS(on), 11.5 nC Q_g, no integrated Schottky	Requires external Schottky for reverse recovery clamping; higher layout complexity	Preferred when lower R_DS(on) justifies added component count and board area
DMN3020LSD-13	30 V, 20 mΩ R_DS(on), 13.5 nC Q_g, dual-N with independent sources	Separate MOSFETs allow asymmetric drive; no integrated diode - needs external rectifier	Chosen when independent gate control or layout flexibility outweighs co-pack integration benefit

Compared with Si7842DP-T1-GE3 and DMN3020LSD-13, the IRF7807D2PBF trades slightly higher R_DS(on) for guaranteed Schottky-MOSFET timing alignment, reduced BOM count, and simplified gate drive routing - making it optimal for cost-sensitive, space-constrained consumer power supplies.

Availability

IRF7807D2PBF is available at Aetrix Electronics and suitable for USB-C PD adapters, point-of-load DC-DC converters, and portable medical power supplies requiring stable component supply and RoHS-compliant sourcing.

Supply support for IRF7807D2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for efficiency-critical applications.

The FETKY™ product line was developed to address board-area and thermal constraints in portable DC-DC conversion, combining optimized MOSFET die and Schottky rectifiers in thermally enhanced packages for synchronous rectifier use cases.

FAQ

What is the maximum continuous drain current for IRF7807D2PBF at 70°C ambient?

The maximum continuous drain current is 6.6 A at 70°C ambient temperature with 25°C case temperature assumed, based on thermal derating from the 8.3 A rating at 25°C and R_θJA = 50 °C/W. This assumes mounting on a 1-inch² copper pad without forced airflow.

Can IRF7807D2PBF be used in hard-switched PFC circuits?

No - IRF7807D2PBF is not rated for PFC applications. Its 30 V V_DS rating and lack of avalanche ruggedness specification make it unsuitable for boost PFC stages where V_DS routinely exceeds 400 V. It is qualified only for low-voltage synchronous rectification.

How does the integrated Schottky diode differ from the MOSFET's body diode?

The integrated Schottky diode has V_SD = 0.54 V at 3 A and t_rr ≈ 36 ns, while the body diode exhibits higher forward voltage (~1.2 V) and slower recovery (>100 ns). During turn-off, the Schottky conducts first, reducing reverse recovery charge and preventing cross-conduction in synchronous gate drive.

Is IRF7807D2PBF pin-compatible with standard SO-8 MOSFETs?

No - although it uses an SO-8 outline, IRF7807D2PBF has a nonstandard pin mapping: pins 1–4 are internally shorted as source, and pins 5–8 are shared drain/cathode. Standard SO-8 N-channel MOSFETs use separate gate, drain, and source pins; direct replacement requires PCB redesign.

IRF7807D2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807D2PBF FAQ

1.How can I place an order for IRF7807D2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807D2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807D2PBF reliable?

The price and inventory of IRF7807D2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807D2PBF is usually 5 days.

3.What payment methods are accepted for IRF7807D2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807D2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807D2PBF?

IRF7807D2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807D2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807D2PBF?

For technical support, including IRF7807D2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807D2PBF requirements.

6.How does Aetrix verify that IRF7807D2PBF is sourced from the original manufacturer or authorized distributors?

All IRF7807D2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807D2PBF meets industry standards.

7.What is the process for return or replacement of IRF7807D2PBF?

All IRF7807D2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807D2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807D2PBF part is unused and in its original packaging.

Return procedure for IRF7807D2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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