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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807D2TRPBF

Name: IRF7807D2TRPBF
Brand: Infineon Technologies
SKU: IRF7807D2TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807D2TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807D2TRPBF.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

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Product details

Overview

IRF7807D2TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET® Power MOSFET and integrated Schottky diode in a single SO-8 package, designed specifically for synchronous rectification in DC-DC converters up to 5 A output. It features 30 V V_DS, 25 mΩ R_DS(on) at V_GS = 4.5 V, 14 nC total gate charge, 0.54 V Schottky forward voltage at 3 A/25°C, and 50 °C/W junction-to-ambient thermal resistance.

For engineers reviewing the IRF7807D2TRPBF datasheet, IRF7807D2TRPBF pinout, IRF7807D2TRPBF application in synchronous buck converters, or IRF7807D2TRPBF equivalent for low-loss secondary-side rectification, this device delivers verified conduction and switching loss reduction in space-constrained portable power stages.

Technical Context

This FETKY™ device integrates a logic-level N-channel MOSFET and a low-V_f Schottky diode on a thermally enhanced SO-8 leadframe, enabling true synchronous rectification without external diode placement. The MOSFET operates with V_GS(th) = 1.0 V and supports gate drive down to 2.5 V, while the Schottky exhibits 36 ns reverse recovery time and 41 nC Q_rr under 7 A/25°C conditions.

The co-pack architecture eliminates parasitic inductance between switch and diode, reduces PCB layout complexity, and maintains tight thermal coupling-critical for stable operation in high-frequency (≥300 kHz) DC-DC topologies where body diode conduction must be avoided. Junction temperature range spans –55°C to 150°C, validated for consumer-grade reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters.
R_DS(on)	25 mΩ @ V_GS = 4.5 V - Low conduction loss enabling ≤125 mW I²R loss at 7 A continuous current.
Q_g	14 nC - Enables efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., UCC27531).
V_SD	0.54 V @ I_S = 3 A, T_j = 25°C - Schottky forward drop significantly lower than MOSFET body diode, reducing dead-time losses.
trr	36 ns - Fast reverse recovery minimizes shoot-through risk during hard commutation in synchronous rectifiers.
R_θJA	50 °C/W - Validated on 1-inch² copper board; enables 2.5 W power dissipation at ≤70°C ambient without heatsink.

Pinout & Package

IRF7807D2TRPBF uses a modified SO-8 (JEDEC MS-012AA) package with custom leadframe for improved thermal performance. Pin numbering follows standard SO-8 top view: pins 1–4 on left side, 5–8 on right side, with pin 1 marked by notch or dot.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET & Schottky)	Common source node shared by both devices; connects to output rail or ground return path.
5, 6, 7, 8	Drain (MOSFET) / Cathode (Schottky)	Shared drain-cathode terminal; ties to inductor node in buck converter secondary side.
Gate (Pin 1 only)	MOSFET control input	Single gate connection; requires logic-level drive (2.5–12 V); no gate connection to Schottky.

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates discrete diode placement and interconnect inductance, reducing layout area by ≥40% vs. dual-SO-8 solution.
Low R_DS(on) + low V_SD	Combined conduction loss <0.25 W at 5 A output, improving efficiency by 1.2–1.8% over standard MOSFET-only sync rectifiers.
Thermally enhanced SO-8	Custom leadframe lowers R_θJA by 15% vs. standard SO-8, supporting higher sustained current in compact designs.
Logic-level gate threshold	V_GS(th) = 1.0 V ensures reliable turn-on with 3.3 V controller outputs, avoiding bootstrapping complexity.

Applications

USB-C PD Adapters

Smartphone PMICs

Use Scenario: Secondary-side synchronous rectification in 20–45 W USB-C power adapters operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Replaces flyback secondary diode; driven by dedicated sync controller (e.g., MP6908) with precise timing to avoid cross-conduction.

Use Value: Reduces rectifier losses by 45% vs. 40 V Schottky, enabling >94% peak efficiency and 5°C lower secondary-side temperature rise.

Use Scenario: Buck converter output stage in smartphone battery charging ICs delivering 3–5 A at 3.3–5 V.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-density, multi-phase PMIC power rails; gate driven directly from internal PWM generator.

Use Value: Enables 0.8 mm² footprint reduction per phase and supports 2 MHz switching without thermal derating.

Wireless Charging Transmitters

Portable SSD Power Rails

Use Scenario: Rectification of resonant tank output in 15 W Qi-compliant wireless charging transmitters.

IC Role / Device Role / Timing Role: Low-V_f Schottky handles high di/dt during zero-voltage switching transitions; MOSFET clamps reverse recovery spikes.

Use Value: Suppresses EMI from diode reverse recovery, meeting CISPR-32 Class B limits without added snubbers.

Use Scenario: Point-of-load regulation for NVMe SSD controllers requiring clean 1.8 V/3.3 V rails at ≤2 A.

IC Role / Device Role / Timing Role: Compact, low-noise synchronous rectifier in ultra-thin 6-layer PCBs with limited thermal mass.

Use Value: Maintains <15 mV output ripple under 100 kHz load transients due to fast trr and low Q_oss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP-T1-GE3	30 V, 12 mΩ R_DS(on), but no integrated Schottky; requires external diode for reverse recovery control.	Better conduction loss at high current, but adds layout area and parasitic inductance.	Prefer when gate drive is ≥10 V and layout allows separate diode placement.
IPG20N04S4L-11	40 V, 11.5 mΩ, integrated Schottky, but TO-252 package; R_θJA = 60 °C/W on same board.	Higher voltage rating suits 36 V industrial inputs, but larger footprint and worse thermal performance.	Choose only when 40 V rating or higher current (>8 A) is required.

Compared with Si7842DP-T1-GE3 and IPG20N04S4L-11, IRF7807D2TRPBF uniquely balances low R_DS(on), integrated Schottky, and SO-8 thermal capability-making it optimal for space- and efficiency-constrained 24 V-class consumer DC-DC systems.

Availability

IRF7807D2TRPBF is available at Aetrix Electronics and suitable for USB-C PD adapters, smartphone PMICs, wireless charging transmitters, and portable SSD power rails requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF7807D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The FETKY™ product line was developed to replace discrete MOSFET + Schottky combinations in high-frequency DC-DC converters, targeting portable electronics where board area, thermal density, and efficiency are critical constraints.

FAQ

What is the maximum continuous drain current for IRF7807D2TRPBF at 70°C ambient?

The maximum continuous drain current is 6.6 A at 70°C ambient when mounted on a 1-inch² copper board. This rating accounts for thermal derating from the 8.3 A value at 25°C, based on the 50 °C/W R_θJA and 150°C maximum junction temperature limit.

Can IRF7807D2TRPBF be used as a standalone Schottky diode without driving the gate?

Yes-the Schottky diode operates independently of the MOSFET gate. With gate floating or grounded, the device functions as a 30 V, 3.7 A average forward current Schottky rectifier with 0.54 V V_SD at 3 A and 25°C, though conduction loss increases slightly compared to active synchronous mode.

Does IRF7807D2TRPBF include a body diode in addition to the Schottky diode?

Yes-it contains both the intrinsic body diode of the N-channel MOSFET and the co-packaged Schottky diode. However, the Schottky dominates conduction due to its lower forward voltage; the body diode remains electrically present but is not intended for primary rectification.

What is the recommended PCB layout practice for thermal management?

Maximize copper area connected to pins 1–4 (source) and 5–8 (drain/cathode) using multiple thermal vias to inner ground/power planes. Maintain ≥10 mm² of 2-oz copper per source/drain pad, and avoid placing thermal relief on source pins to ensure optimal heat spreading from the custom SO-8 leadframe.

IRF7807D2TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807D2TRPBF FAQ

1.How can I place an order for IRF7807D2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807D2TRPBF reliable?

The price and inventory of IRF7807D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807D2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7807D2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807D2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807D2TRPBF?

IRF7807D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807D2TRPBF?

For technical support, including IRF7807D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807D2TRPBF requirements.

6.How does Aetrix verify that IRF7807D2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7807D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807D2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7807D2TRPBF?

All IRF7807D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807D2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807D2TRPBF part is unused and in its original packaging.

Return procedure for IRF7807D2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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