Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807PBF

Name: IRF7807PBF
Brand: Infineon Technologies
SKU: IRF7807PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7807PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807PBF.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,946

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7807PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V V_DS, 8.3 A continuous drain current at 25°C, and 25 mΩ R_DS(on) at V_GS = 4.5 V. It features 17 nC total gate charge, 16.8 nC output charge, and is optimized for synchronous buck converters in mobile DC-DC power supplies.

For engineers reviewing the IRF7807PBF datasheet, IRF7807PBF pinout, IRF7807PBF application, or IRF7807PBF equivalent, key selection criteria include low conduction loss (R_DS(on)), minimized Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on, and validated performance in 3.3 V/5 V synchronous converter topologies with matched control/synchronous FET pairing.

Technical Context

This MOSFET employs HEXFET® technology to balance on-resistance and gate charge, enabling high-efficiency operation in mobile DC-DC converters where both control-FET (Q1) and synchronous-FET (Q2) roles demand low R_DS(on) and low Q_oss. Its 17 nC Q_g and 2.9 nC Q_gd support fast switching with reduced drive loss and shoot-through risk.

The device exhibits 1.2 V body diode forward voltage at 7 A, 80 nC reverse recovery charge (Q_rr), and a 50 °C/W junction-to-ambient thermal resistance when mounted on 1-inch² copper board - critical for thermally constrained portable designs operating up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V in synchronous buck converters without derating
R_DS(on)	25 mΩ @ V_GS = 4.5 V - enables ≤150 mW conduction loss at 7 A RMS in 5 V output stages
Q_g	17 nC - determines gate driver current requirement and switching transition time
Q_oss	16.8 nC @ V_DS = 16 V - directly contributes to switching loss and must be supplied each cycle
Q_rr	80 nC - causes cross-conduction loss in synchronous FET and increases stress on control FET
R_θJA	50 °C/W - defines thermal rise under standard PCB layout; limits max. continuous power to ~1.6 W at 70°C ambient

Pinout & Package

IRF7807PBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads for enhanced thermal performance. Pin 1–3 and 5–7 are parallel-connected drain terminals; Pin 4 is gate; Pins 6 and 8 are source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-side switch node connection; multiple pins reduce inductance and improve current sharing
4	Gate (G)	Control terminal requiring <17 nC charge to fully enhance; sensitive to C_dv/dt coupling
6, 8	Source (S)	Low-side return path; dual pins lower source inductance critical for synchronous FET stability

Key Features

Feature	Design Value
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.1 nC = 1.38 - minimizes risk of spurious turn-on during high dV/dt transitions at switching node
Matched Q_g and R_DS(on)	17 nC Q_g, 25 mΩ R_DS(on) - allows single part number (IRF7807PBF) to serve as both control and synchronous FET in 3.3 V/5 V converters
Body diode with low Q_rr	80 nC Q_rr - reduces recovery-related losses and EMI vs. standard silicon diodes in discontinuous conduction mode
Lead-free (PbF) construction	RoHS-compliant plating and mold compound - meets IPC/JEDEC J-STD-020 reflow profile requirements for lead-free assembly

Applications

Mobile PC Voltage Regulator

USB-C PD Power Delivery

Use Scenario: Dual-phase 5 V synchronous buck converter supplying CPU core logic in ultrabook platforms.

IC Role / Device Role / Timing Role: Paired IRF7807PBF devices serve as control-FET (Q1) and synchronous-FET (Q2) in each phase, switching at 500 kHz.

Use Value: Achieves >94% efficiency at 4 A load with Vin = 14 V, enabled by matched R_DS(on) and low Q_oss.

Use Scenario: 20 V input to 5 V/3 A output buck converter in USB-C PD sink adapter.

IC Role / Device Role / Timing Role: IRF7807PBF operates as synchronous-FET (Q2) with external controller driving Q1, handling reverse recovery during light-load DCM.

Use Value: 80 nC Q_rr and 1.2 V V_SD reduce body-diode conduction loss and improve light-load regulation.

Industrial IoT Sensor Node

Automotive Infotainment PMIC

Use Scenario: Compact 3.3 V step-down regulator powering ARM Cortex-M4 MCU and BLE radio in battery-powered sensor hub.

IC Role / Device Role / Timing Role: Single IRF7807PBF used as low-side synchronous switch in 2 MHz buck converter with integrated controller.

Use Value: 25 mΩ R_DS(on) and 17 nC Q_g enable high efficiency (>91%) while maintaining stable gate drive at high frequency.

Use Scenario: Secondary 1.8 V/2 A rail in automotive infotainment SoC power management IC, operating in -40°C to 125°C ambient.

IC Role / Device Role / Timing Role: IRF7807PBF deployed as synchronous-FET in discrete buck stage, leveraging 150°C T_J rating and robust Q_rr performance.

Use Value: Validated 80 nC Q_rr and 16.8 nC Q_oss ensure predictable loss budget across full automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832PBF	30 V V_DS, 11 A I_D, 14 mΩ R_DS(on), 22 nC Q_g	Higher current rating but larger gate charge increases drive loss in high-frequency converters	Prefer when higher continuous current (>9 A) is required and switching frequency ≤300 kHz
Si7852DP-T1-GE3	30 V V_DS, 10.5 A I_D, 13.5 mΩ R_DS(on), 19 nC Q_g, 12.5 nC Q_oss	Lower Q_oss improves light-load efficiency but lacks published Q_rr data for synchronous FET validation	Select when lowest possible switching loss dominates over body-diode recovery predictability

Compared with IRF7807PBF, IRF7832PBF offers higher current headroom at the cost of increased gate drive burden, while Si7852DP-T1-GE3 delivers lower Q_oss but lacks documented Q_rr - making IRF7807PBF the preferred choice for designs requiring verified synchronous FET behavior across load and temperature.

Availability

IRF7807PBF is available at Aetrix Electronics and suitable for mobile DC-DC converters, USB-C power delivery adapters, and industrial IoT sensor node power supplies requiring stable component supply and RoHS-compliant packaging.

Supply support for IRF7807PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with broad portfolio coverage and vertical integration.

The IRF7807PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained mobile and portable electronics.

FAQ

Is IRF7807PBF suitable for use as both control-FET and synchronous-FET in the same converter?

Yes. The IRF7807PBF is explicitly validated for dual-role use in 3.3 V and 5 V synchronous buck converters, as confirmed by efficiency curves in Figures 3 and 4 of the official datasheet. Its matched R_DS(on) (25 mΩ), Q_g (17 nC), and Q_oss (16.8 nC) enable identical thermal and switching behavior for both positions without redesign.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate-source voltage is ±12 V, but the device is fully enhanced at V_GS = 4.5 V per datasheet test conditions. Driving above 10 V provides no significant R_DS(on) improvement and increases gate oxide stress risk; 4.5 V to 10 V is the optimal range for balancing conduction loss and reliability.

Does IRF7807PBF have a specified avalanche energy rating (E_AS)?

No. The datasheet does not specify single-pulse or repetitive avalanche energy ratings. The device is intended for clamped inductive switching only, with external circuit protection (e.g., input capacitors, snubbers) required to limit V_DS overshoot beyond 30 V during transient events.

How does the body diode's reverse recovery charge affect system-level efficiency?

With Q_rr = 80 nC, the body diode introduces measurable conduction loss during dead-time intervals in synchronous rectification. This loss transfers heat to the control-FET and degrades light-load efficiency; using a parallel Schottky diode (as noted in datasheet section "Reverse Recovery Charge (with Parallel Schottky)") reduces effective Q_rr to 50 nC and improves overall converter efficiency by 0.8–1.2%.

IRF7807PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807PBF FAQ

1.How can I place an order for IRF7807PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807PBF reliable?

The price and inventory of IRF7807PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807PBF is usually 5 days.

3.What payment methods are accepted for IRF7807PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807PBF?

IRF7807PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807PBF?

For technical support, including IRF7807PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807PBF requirements.

6.How does Aetrix verify that IRF7807PBF is sourced from the original manufacturer or authorized distributors?

All IRF7807PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807PBF meets industry standards.

7.What is the process for return or replacement of IRF7807PBF?

All IRF7807PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807PBF part is unused and in its original packaging.

Return procedure for IRF7807PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…