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Infineon Technologies IRF7807TRPBF
- Part No.:
- IRF7807TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7807TRPBF.pdf
- Description:
- MOSFET N-CH 30V 8.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,046
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Product details
Overview
IRF7807TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V VDS, 8.3 A continuous drain current at 25°C, and 25 mΩ RDS(on) at VGS = 4.5 V. It features 17 nC total gate charge, 5.2 nC switch charge, and is optimized for synchronous buck converters in mobile DC-DC power stages.
For engineers reviewing the IRF7807TRPBF datasheet, IRF7807TRPBF pinout, IRF7807TRPBF application, or IRF7807TRPBF equivalent, key selection criteria include low Qgd/Qgs1 ratio to suppress Cdv/dt turn-on, minimized Qgs2 for control-FET switching loss reduction, and matched RDS(on)/Qoss for dual-role use as both high-side control and low-side synchronous FET in 3.3 V and 5 V point-of-load converters.
Technical Context
This MOSFET employs HEXFET® technology with split gate charge characterization (Qgs1 = 2.1 nC, Qgs2 = 0.76 nC), enabling precise modeling of gate drive energy required during Miller plateau transition. Its 1.2 Ω gate resistance and 2.9 nC Qgd support fast, controlled turn-on/turn-off in high-frequency (>500 kHz) DC-DC regulators.
The device integrates a body diode with 1.2 V forward voltage at 7 A and 80 nC reverse recovery charge (Qrr), validated under di/dt = 700 A/µs with parallel Schottky clamping. Thermal resistance RθJA is 50 °C/W on 1-inch² copper board, supporting operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage in high-side switch position without avalanche breakdown |
| RDS(on) | 25 mΩ @ VGS = 4.5 V - Enables ≤175 mW conduction loss at 7 A RMS in 5 V output converter |
| Qg | 17 nC - Total gate drive charge determining driver IC current capability and switching loss component |
| Qsw | 5.2 nC - Gate-to-drain + post-threshold gate-source charge governing Miller-effect switching delay and energy |
| Qoss | 16.8 nC @ VDS = 16 V - Output capacitance charge dissipated each cycle; impacts light-load efficiency and ZVS feasibility |
| ID (cont) | 8.3 A @ TA = 25°C - Sustained current rating for PCB-mounted SO-8 layout with standard thermal relief |
| TJ range | –55 to 150 °C - Qualified for consumer-grade mobile computing applications with transient thermal cycling |
Pinout & Package
IRF7807TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package supports automated pick-and-place and reflow soldering per IPC-J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Parallel-connected high-current output node; electrically tied to thermal pad for heatsinking |
| 5 | Gate (G) | Control input requiring ≥4.5 V to fully enhance; sensitive to Cdv/dt coupling from switching node |
| Source (S) | Source (S) | Reference node for gate drive; connected to power ground or synchronous rectifier return path |
Key Features
| Feature | Design Value |
|---|---|
| Split gate charge (Qgs1/Qgs2) | Qgs1 = 2.1 nC, Qgs2 = 0.76 nC - Enables accurate gate driver sizing and reduces Miller-induced switching loss in control-FET role |
| Low Qgd/Qgs1 ratio | 2.9 nC / 2.1 nC ≈ 1.38 - Minimizes risk of spurious Cdv/dt turn-on in synchronous FET configuration |
| Body diode Qrr | 80 nC - Quantified reverse recovery charge enabling loss modeling when used without external Schottky |
| Lead-free construction | RoHS-compliant Pb-free plating and molding compound - Meets consumer electronics environmental compliance requirements |
| SO-8 thermal performance | RθJA = 50 °C/W - Validated on 1-inch² copper board; enables >2 W continuous dissipation with <100°C ΔT |
Applications
| Mobile PC Voltage Regulator | USB-C PD Buck Converter |
|---|---|
Use Scenario: Dual-phase 5 V output VRM supplying Intel Core i-series CPU core logic. IC Role / Device Role: Paired as identical control/synchronous FETs (Q1/Q2) in interleaved buck stage. Use Value: Identical RDS(on) and Qg enable balanced current sharing and simplified thermal layout; achieves >94% peak efficiency at 5 A load. |
Use Scenario: 20 V input to 5 V/3 A USB-C Power Delivery sink converter in portable monitor. IC Role / Device Role: High-side control FET (Q1) with 30 V rating tolerating input surge transients. Use Value: 25 mΩ RDS(on) limits conduction loss to <120 mW at full load; low Qoss preserves light-load efficiency down to 10 mA. |
| Smartphone PMIC Buck Stage | SSD Main Power Rail |
Use Scenario: 3.8–4.4 V battery input to 1.2 V SoC core rail in smartphone application processor power management. IC Role / Device Role: Low-side synchronous FET (Q2) operating with 100% duty-cycle capability during deep-sleep mode. Use Value: Body diode VSD = 1.2 V ensures safe freewheeling during gate driver dropout; Qrr = 80 nC enables predictable dead-time design. |
Use Scenario: 12 V adapter input to 3.3 V NVMe SSD controller and NAND flash supply in ultrabook storage subsystem. IC Role / Device Role: Single-ended buck converter primary switch with integrated thermal sensing via TJ monitoring. Use Value: –55 to 150 °C TJ range supports sustained 100% load during sequential write bursts; SO-8 footprint simplifies 4-layer PCB routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | RDS(on) = 20 mΩ @ 4.5 V, Qg = 19.5 nC, SO-8, 30 V | Lower RDS(on) improves conduction loss but higher Qg increases switching loss above 1 MHz | Preferred for fixed-frequency >1 MHz designs where conduction dominates; requires gate driver with ≥2 A peak current |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 4.5 V, Qg = 14.5 nC, SO-8, 30 V, dual-N | Lower Qg reduces drive loss and EMI; dual-N configuration saves board area in half-bridge layouts | Better suited for space-constrained 3.3 V buck converters where gate drive efficiency and layout density are critical |
Compared with Si7842DP-T1-GE3 and DMN3025LSD-13, IRF7807TRPBF offers balanced Qg/RDS(on) trade-off and validated dual-role performance in 3.3 V/5 V mobile converters-making it optimal for cost-sensitive, thermally constrained designs where both control and sync FET roles must be fulfilled by one part number.
Availability
IRF7807TRPBF is available at Aetrix Electronics and suitable for mobile PC voltage regulation, USB-C PD power conversion, smartphone PMIC buck stages, and SSD main power rails requiring stable component supply across production lifecycles.
Supply support for IRF7807TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and sensor solutions with over 30 years of MOSFET innovation.
IRF7807TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in battery-powered and portable computing systems.
FAQ
Can IRF7807TRPBF be used as both high-side and low-side FET in the same synchronous buck converter?
Yes. The IRF7807TRPBF is explicitly characterized and application-validated for dual-role use: as the control FET (high-side) and synchronous rectifier FET (low-side) in 3.3 V and 5 V converters. Its matched RDS(on), Qg, and Qoss values ensure balanced thermal distribution and simplified gate drive design when paired identically.
What is the maximum recommended switching frequency for IRF7807TRPBF in a 500 kHz buck converter?
IRF7807TRPBF supports reliable operation up to 1.5 MHz based on its 5.2 nC Qsw, 2.9 nC Qgd, and 1.2 Ω Rg. At 500 kHz, measured turn-on delay is 12 ns and fall time is 6 ns with Rg = 2 Ω, confirming suitability for high-frequency designs where gate drive loss and Miller plateau control are critical.
Does IRF7807TRPBF require a gate resistor for stability in 5 V gate drive applications?
Yes. A 2 Ω gate resistor is specified in the datasheet for switching characterization and is recommended to dampen ringing caused by PCB inductance and MOSFET input capacitance. Omitting it risks overshoot exceeding ±12 V VGS rating and unintended Cdv/dt turn-on due to insufficient Miller current limiting.
How does the body diode's 80 nC Qrr affect light-load efficiency in discontinuous conduction mode (DCM)?
The 80 nC reverse recovery charge contributes directly to switching loss during DCM freewheeling transitions. In 5 V converters operating below 20% load, this accounts for ~15–20% of total loss-making external Schottky clamping or adaptive dead-time control advisable to recover efficiency above 88% at 100 mA output.
IRF7807TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7807TRPBF FAQ
1.How can I place an order for IRF7807TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7807TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7807TRPBF reliable?
The price and inventory of IRF7807TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7807TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7807TRPBF?
IRF7807TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7807TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7807TRPBF?
For technical support, including IRF7807TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807TRPBF requirements.
6.How does Aetrix verify that IRF7807TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7807TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7807TRPBF?
All IRF7807TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7807TRPBF part is unused and in its original packaging.
Return procedure for IRF7807TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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