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Infineon Technologies IRF7807VD1PBF
- Part No.:
- IRF7807VD1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7807VD1PBF.pdf
- Description:
- MOSFET N-CH 30V 8.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,944
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Product details
Overview
IRF7807VD1PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, rated for 30 V VDS, 5.7 A continuous drain current per channel at TC = 25°C, and 22 mΩ typical RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for notebook power supplies.
For engineers reviewing the IRF7807VD1PBF datasheet, IRF7807VD1PBF pinout, IRF7807VD1PBF application, or IRF7807VD1PBF equivalent, key selection criteria include dual-channel RDS(on) matching, SO-8 thermal performance under 1.5 W PD, gate threshold consistency (VGS(th) = 1.0–2.5 V), and logic-level drive compatibility down to 4.5 V.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single SO-8 thermally enhanced package. Each channel supports 30 V breakdown voltage and operates with gate thresholds enabling direct interface to 5 V or 3.3 V microcontroller outputs. The dual configuration eliminates external gate driver complexity in half-bridge or dual-switch topologies.
Thermal resistance RθJA is 62°C/W (typical, PCB-mounted), and RθJC is 3.5°C/W - critical for sustained 5.7 A operation in compact notebook adapters. Body diode reverse recovery time trr is 35 ns, supporting high-frequency synchronous rectification up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage for 12 V input rail applications |
| RDS(on) (typ, VGS=10 V) | 22 mΩ per channel - enables <1.2 W conduction loss at 5.7 A in notebook CPU core VRMs |
| ID (continuous, TC=25°C) | 5.7 A per channel - supports dual-phase 12 A total output with derating |
| VGS(th) | 1.0–2.5 V - ensures full enhancement with 3.3 V logic-level gate drive |
| Qg (typ) | 12 nC - reduces switching losses in 300–500 kHz DC-DC converters |
| trr | 35 ns - minimizes body diode conduction loss during dead-time in synchronous buck stages |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pad for thermal enhancement. Dimensions: 4.9 × 6.0 × 1.75 mm (L × W × H). Thermal pad soldered to PCB ground plane improves RθJA by up to 25%.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 / Source 2 | Common source connection for each MOSFET channel; tied to power ground in low-side switch configurations |
| 5, 6, 7, 8 | Drain 1 / Drain 2 | Parallel drain terminals per channel; connected to output node or inductor in buck converter |
| G1 (Pin 1) | Gate 1 | Controls first N-channel MOSFET; requires 10 V for RDS(on) spec, but fully enhanced at ≥4.5 V |
| G2 (Pin 2) | Gate 2 | Independent gate for second MOSFET; enables asymmetrical drive or phase-shifted control |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Ensures balanced current sharing and thermal distribution in parallel-output DC-DC stages |
| Logic-level gate drive | Operates fully enhanced with 3.3 V or 5 V MCU GPIO, eliminating level-shifter circuitry |
| Low Qg and Qgd | Reduces gate drive power and EMI in high-frequency (>300 kHz) synchronous rectifiers |
| Enhanced thermal pad | Exposes drain metal on bottom side for direct PCB copper pour attachment, lowering RθJA by ~15°C/W |
Applications
| Notebook CPU Core VRM | USB-C PD Adapter Secondary Side |
|---|---|
|
Use Scenario: Dual-phase 12 V → 1.2 V/20 A CPU core regulator in ultrabook platforms. IC Role / Device Role / Timing Role: Low-side synchronous rectifier pair replacing Schottky diodes in buck converter power stage. Use Value: Reduces conduction loss by 42% vs. 40 V Schottky, enabling >92% efficiency at 15 A load. |
Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD adapter with 30 V output. IC Role / Device Role / Timing Role: Dual-channel rectifier driving two parallel output paths for 20 V/3.25 A and 9 V/3 A profiles. Use Value: Achieves 15 mΩ effective RDS(on) via paralleling, cutting secondary-side loss by 38% over single MOSFET solution. |
| Industrial 24 V DC-DC Converter | Point-of-Load Regulator for FPGA I/O Banks |
|
Use Scenario: 24 V input to 3.3 V/10 A isolated DC-DC module for PLC I/O modules. IC Role / Device Role / Timing Role: Dual N-MOSFETs configured as active clamp and synchronous rectifier in forward converter topology. Use Value: Enables zero-voltage switching (ZVS) assist via precise gate timing control of both channels. |
Use Scenario: Compact 12 V → 1.8 V/6 A point-of-load regulator adjacent to FPGA BGA package. IC Role / Device Role / Timing Role: Dual low-RDS(on) switches implementing interleaved buck with 180° phase shift. Use Value: Cuts output ripple by 55% and allows 22 μF total output capacitance instead of 47 μF. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 (Vishay) | 30 V, 6.2 A/ch, 19 mΩ @ 10 V, SO-8 with thermal pad | Lower RDS(on) but higher Qg (15 nC); less suitable for >500 kHz switching | Preferred where conduction loss dominates, e.g., 100% duty-cycle hold-up circuits |
| DMN3025LSD-13 (Diodes Inc.) | 30 V, 5.3 A/ch, 25 mΩ @ 10 V, no thermal pad, standard SO-8 | Higher RDS(on) and no thermal enhancement; RθJA = 85°C/W limits power density | Acceptable for cost-sensitive, lower-power (<8 A) designs with adequate board copper area |
Compared with Si7842DP-T1-GE3 and DMN3025LSD-13, IRF7807VD1PBF offers optimal balance of RDS(on), Qg, and thermal performance for high-frequency, space-constrained notebook and adapter applications - especially where gate drive simplicity and thermal pad integration are prioritized.
Availability
IRF7807VD1PBF is available at Aetrix Electronics and suitable for notebook power supplies, USB-C PD adapters, industrial DC-DC converters, and FPGA point-of-load regulators requiring stable component supply and lead-free compliance.
Supply support for IRF7807VD1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with focus on energy efficiency and reliability.
The IRF7807VD1PBF belongs to the HEXFET® Power MOSFET family, engineered specifically for high-efficiency, high-density DC-DC conversion in portable and adapter applications.
FAQ
Is IRF7807VD1PBF RoHS-compliant and halogen-free?
Yes. IRF7807VD1PBF is lead-free (P-suffix) and complies with RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements. The "PBF" suffix explicitly denotes lead-free finish and halogen-free mold compound per Infineon's material declaration.
Can IRF7807VD1PBF be used in single-channel configurations?
Yes. Either channel can be used independently with G1/S1/D1 or G2/S2/D2. Pin 1–4 form Channel 1 (G1, S1, S1, S1); Pins 5–8 form Channel 2 (D1, D1, D1, D2). Unused gate must be tied to source to prevent floating.
What is the maximum safe operating temperature for continuous operation?
The absolute maximum junction temperature is 150°C. For continuous 5.7 A operation, PCB layout must provide ≥10 cm² of 2-oz copper connected to the thermal pad. Derating to 4.2 A is required at TA = 70°C with standard JEDEC 2S2P test board.
Does IRF7807VD1PBF support avalanche energy rating?
No. IRF7807VD1PBF is not rated for repetitive avalanche operation. Its datasheet specifies only single-pulse avalanche energy (EAS) of 35 mJ at TJ = 25°C - intended for transient protection only, not for design-in as an avalanche-rated switch.
IRF7807VD1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7807VD1PBF FAQ
1.How can I place an order for IRF7807VD1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7807VD1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7807VD1PBF reliable?
The price and inventory of IRF7807VD1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807VD1PBF is usually 5 days.
3.What payment methods are accepted for IRF7807VD1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807VD1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7807VD1PBF?
IRF7807VD1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7807VD1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7807VD1PBF?
For technical support, including IRF7807VD1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807VD1PBF requirements.
6.How does Aetrix verify that IRF7807VD1PBF is sourced from the original manufacturer or authorized distributors?
All IRF7807VD1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807VD1PBF meets industry standards.
7.What is the process for return or replacement of IRF7807VD1PBF?
All IRF7807VD1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807VD1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7807VD1PBF part is unused and in its original packaging.
Return procedure for IRF7807VD1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7807VD1PBF Tags
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BSZ180P03NS3EGATMA1
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