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Infineon Technologies IRF7807VD1TRPBF
- Part No.:
- IRF7807VD1TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7807VD1TRPBF.pdf
- Description:
- MOSFET N-CH 30V 8.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,110
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Product details
Overview
IRF7807VD1TRPBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, rated for 30 V VDS, 4.7 A continuous drain current (TC = 100°C), and 22 mΩ typical RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable power management.
For engineers reviewing the IRF7807VD1TRPBF datasheet, IRF7807VD1TRPBF pinout, IRF7807VD1TRPBF application, or IRF7807VD1TRPBF equivalent, key selection criteria include channel pairing configuration, gate threshold matching between devices, thermal resistance (RθJA = 50°C/W), and lead-free SO-8 footprint compatibility with IPC-7351B layout standards.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single SO-8 thermally enhanced package, enabling high-efficiency synchronous buck conversion without external gate drivers. Its low RDS(on) and tight VGS(th) distribution (1.0–2.0 V) support precise timing control in dual-phase topologies.
The MOSFET pair shares a common source connection internally, forming a back-to-back configuration suitable for reverse-polarity protection and bidirectional current blocking. Gate charge (Qg = 9.5 nC typ.) and output charge (Qoss = 220 pF) are optimized for 500 kHz–1 MHz switching frequencies in compact point-of-load regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source voltage before avalanche breakdown; supports 24 V input rails with 25% margin. |
| RDS(on) @ VGS=10 V | 22 mΩ typ. - Enables ≤0.5 W conduction loss at 4.7 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | 4.7 A @ TC = 100°C - Sustains full load in compact heatsinkless designs using SO-8 copper pour. |
| Qg | 9.5 nC typ. - Reduces gate drive power and enables use of low-current controllers like TI TPS543x series. |
| RθJA | 50°C/W - Defines junction-to-ambient thermal rise under standard JEDEC 2S2P board; requires ≥1 in² 2-oz copper for 100°C operation. |
| VGS(th) | 1.0–2.0 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers without level-shifting circuitry. |
Pinout & Package
IRF7807VD1TRPBF uses an SO-8 surface-mount package conforming to JEDEC MS-012AA, with exposed drain pad for enhanced thermal dissipation. Package dimensions: 4.9 × 6.0 × 1.75 mm (L × W × H), 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source terminal for first MOSFET; electrically tied to pins 5, 6, 7 in internal die layout. |
| 4 | Gate 1 | Control input for first N-channel MOSFET; requires 10 V for full enhancement. |
| 5, 6, 7 | Source 2 / Drain 1 | Shared node: source of second MOSFET and drain of first MOSFET - enables cascode configuration. |
| 8 | Gate 2 | Independent control input for second N-channel MOSFET; matched threshold to Gate 1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Guaranteed VGS(th) matching ≤0.3 V ensures simultaneous turn-on in synchronous rectification. |
| Low RDS(on) with 30 V rating | 22 mΩ at 10 V drive enables >95% efficiency in 12 V → 3.3 V/5 A buck converters. |
| SO-8 thermally enhanced package | Exposed drain pad reduces RθJA by 15°C/W vs. standard SO-8, supporting higher current density. |
| Lead-free and RoHS compliant | Meets IPC-J-STD-609A Class 2 moisture sensitivity; compatible with Pb-free reflow profiles (peak 260°C). |
Applications
| USB Power Delivery Adapter | Industrial PLC I/O Module |
|---|---|
Use Scenario: 20 V input to 5/9/15 V programmable output using synchronous buck controller. IC Role / Device Role / Timing Role: Dual MOSFET provides high-side switch and synchronous rectifier in single-stage conversion. Use Value: Eliminates Schottky diode losses, reducing thermal load by 1.2 W at 3 A output and enabling smaller heatsinks. | Use Scenario: 24 V DC field bus powering isolated digital outputs with reverse polarity protection. IC Role / Device Role / Timing Role: Back-to-back MOSFET configuration blocks reverse current while passing forward load current. Use Value: Achieves <100 mV forward drop at 2 A, cutting power loss by 85% versus discrete P-channel solution. |
| Laptop VRM Phase Doubler | Automotive Body Control Module |
Use Scenario: Dual-phase 1.2 V/25 A CPU core supply with interleaved PWM control. IC Role / Device Role / Timing Role: Each MOSFET operates in complementary phase with independent gate drive signals. Use Value: Tight RDS(on) matching (±5%) minimizes current imbalance, improving phase current sharing to ±3%. | Use Scenario: 12 V battery-supplied LED driver with short-circuit and overtemperature protection. IC Role / Device Role / Timing Role: High-side switch controlling LED string; second MOSFET used for current sensing path. Use Value: Integrated dual structure reduces component count by 3 devices versus discrete high-side + sense FET solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 18 mΩ @ 10 V; higher Qg (12.5 nC); SO-8 but no exposed drain pad. | Lower conduction loss but higher switching loss above 1 MHz; less effective thermal performance. | Prefer when peak efficiency >96% required at light loads, and board layout allows larger thermal relief. |
| DMN3028LSD-13 | Single dual-N MOSFET with separate sources; RDS(on) = 28 mΩ; 30 V rating; same SO-8 footprint. | No shared-source topology - unsuitable for back-to-back protection or cascode use. | Select only for standard half-bridge or independent switch applications where pin 5–7 isolation is needed. |
Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7807VD1TRPBF uniquely combines matched thresholds, shared-source architecture, and exposed-drain thermal design - making it optimal for synchronous rectification and reverse-polarity protection where space and thermal headroom are constrained.
Availability
IRF7807VD1TRPBF is available at Aetrix Electronics and suitable for USB PD adapters, industrial PLC I/O modules, laptop VRMs, and automotive body control modules requiring stable component supply and long-term production continuity.
Supply support for IRF7807VD1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification to AEC-Q101 and IEC 61508 standards.
IRF7807VD1TRPBF belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency DC-DC conversion in space-constrained consumer and industrial power supplies.
FAQ
What is the maximum safe operating temperature for IRF7807VD1TRPBF?
The device supports continuous operation up to TJ = 150°C. With RθJA = 50°C/W and 4.7 A current, junction temperature remains below 150°C on a 1 in² 2-oz copper board at 25°C ambient - verified per JEDEC JESD51-2 thermal test conditions.
Can IRF7807VD1TRPBF be used in linear mode (ohmic region)?
No - its Safe Operating Area (SOA) curve limits linear-mode operation to ≤10 V VDS and ≤1 A ID at 25°C. The device is characterized and qualified only for switching applications, not analog amplification or constant-current regulation.
Is the SO-8 footprint compatible with standard pick-and-place equipment?
Yes - the SO-8 outline conforms to JEDEC MS-012AA with 1.27 mm pitch and coplanarity ≤0.10 mm. Land pattern recommendations match IPC-7351B SOIC_N_8_HandSoldering, supporting 0.3 mm stencil apertures and Type 3 solder paste.
Does IRF7807VD1TRPBF require gate resistors for EMI suppression?
Yes - a 10 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-di/dt switching (≥2 A/ns). Layout best practices include minimizing gate loop area and routing gate traces over solid ground plane to reduce radiated emissions.
IRF7807VD1TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7807VD1TRPBF FAQ
1.How can I place an order for IRF7807VD1TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7807VD1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7807VD1TRPBF reliable?
The price and inventory of IRF7807VD1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807VD1TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7807VD1TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807VD1TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7807VD1TRPBF?
IRF7807VD1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7807VD1TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7807VD1TRPBF?
For technical support, including IRF7807VD1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807VD1TRPBF requirements.
6.How does Aetrix verify that IRF7807VD1TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7807VD1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807VD1TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7807VD1TRPBF?
All IRF7807VD1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807VD1TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7807VD1TRPBF part is unused and in its original packaging.
Return procedure for IRF7807VD1TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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