Infineon Technologies IRF7807VD2PBF

Overview

IRF7807VD2PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel MOSFET and Schottky diode in a single SO-8 package, designed for synchronous rectification in DC-DC converters up to 5 A output. It features 17 mΩ R_DS(on) at V_GS = 4.5 V, 9.5 nC total gate charge, and integrated 3.7 A average forward current Schottky diode with 0.54 V forward voltage at 3.0 A and 25°C.

For engineers reviewing the IRF7807VD2PBF datasheet, IRF7807VD2PBF pinout, IRF7807VD2PBF application, or IRF7807VD2PBF equivalent, key selection criteria include low conduction loss (R_DS(on)), minimized switching loss (Q_sw = 3.4 nC, Q_oss = 12 nC), thermal resistance (R_θJA = 50 °C/W), and co-pack integration enabling board-space reduction in portable power management designs.

Technical Context

This FETKY device integrates a logic-level N-channel HEXFET® MOSFET and a low-V_f Schottky diode on a thermally enhanced SO-8 leadframe. The MOSFET operates with V_DS = 30 V, V_GS = ±20 V, and supports continuous drain current up to 8.3 A at 25°C. Its gate threshold voltage is 1.0 V, enabling drive compatibility with 3.3 V and 5 V controllers.

The Schottky diode provides reverse recovery time of 36 ns and reverse recovery charge of 41 nC at T_j = 25°C, while the body diode and Schottky share cathode/anode terminals per pinout. Thermal design leverages R_θJL = 20 °C/W to improve power dissipation under high-current pulsed operation.

Key Specifications

Pinout & Package

IRF7807VD2PBF uses a modified SO-8 (JEDEC MS-012AA) package with enhanced thermal leadframe. Pin numbering follows top-view orientation with pins 1–4 on left side and 5–8 on right side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Compared with Si7842DP and DMN3025LSD, IRF7807VD2PBF delivers superior thermal performance (R_θJL = 20 °C/W), integrated Schottky functionality, and balanced Q_G/R_DS(on) for compact, high-efficiency DC-DC stages where board space and EMI from discrete diode routing are constrained.

Availability

IRF7807VD2PBF is available at Aetrix Electronics and suitable for mobile PC voltage regulators, USB-C PD adapters, industrial SMPS auxiliary rails, and smartphone PMIC buck stages requiring stable component supply and long-term lifecycle support.

Supply support for IRF7807VD2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices and system-level energy efficiency.

The FETKY™ product line was developed to address board-area constraints and efficiency bottlenecks in portable and high-density DC-DC conversion, combining optimized MOSFETs and Schottky diodes into thermally robust, surface-mount packages for next-generation power supplies.

FAQ

What is the maximum continuous drain current for IRF7807VD2PBF at 70°C ambient?

The maximum continuous drain current is 6.6 A at 70°C ambient temperature with 25°C case temperature, based on thermal derating from the 8.3 A rating at 25°C. This value assumes operation on a 1-inch square copper PCB with 50% duty cycle and accounts for R_θJA = 50 °C/W and power dissipation limits.

Can IRF7807VD2PBF be used as both control FET and synchronous FET in the same converter?

Yes - the device has been validated in 3.3 V and 5 V buck converters using the same IRF7807V part for both Q1 (control FET) and Q2 (synchronous FET), leveraging its logic-level gate threshold (1.0 V), balanced Q_G/R_DS(on), and low Q_oss to maintain efficiency across load ranges.

Does the integrated Schottky diode share the same thermal path as the MOSFET?

Yes - both the MOSFET die and Schottky die are mounted on the same thermally enhanced leadframe within the SO-8 package, resulting in shared junction-to-ambient and junction-to-lead thermal resistance values (R_θJA = 50 °C/W, R_θJL = 20 °C/W), confirmed by JEDEC MS-012AA package characterization.

What is the recommended gate resistor value for minimizing switching loss without causing ringing?

A 2 Ω gate resistor is specified in the datasheet for test conditions (V_GS = 5 V, R_G = 2 Ω), yielding measured rise/fall times of 1.2 ns and 2.2 ns. For production use, 1.5–3.3 Ω is recommended to balance switching speed, EMI, and gate driver stress while maintaining t_r/t_f < 3 ns.