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Infineon Technologies IRF7807VD2TRPBF
- Part No.:
- IRF7807VD2TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7807VD2TRPBF.pdf
- Description:
- MOSFET N-CH 30V 8.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,741
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Product details
Overview
IRF7807VD2TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel Power MOSFET and Schottky diode in a single SO-8 package, designed for synchronous rectification in DC-DC converters up to 5 A output. It features 17 mΩ RDS(on) at VGS = 4.5 V, 9.5 nC total gate charge, and integrated low-Vf Schottky (0.54 V at 3 A, 25°C), enabling high-efficiency power conversion in portable electronics.
For engineers reviewing the IRF7807VD2TRPBF datasheet, IRF7807VD2TRPBF pinout, IRF7807VD2TRPBF application, or IRF7807VD2TRPBF equivalent, key selection criteria include RDS(on), QG/Qsw, Schottky forward voltage, thermal resistance (RθJA = 50 °C/W), and co-pack integration for board space reduction in buck converter synchronous FET positions.
Technical Context
This device integrates a HEXFET® MOSFET and a Schottky diode on a customized SO-8 leadframe optimized for thermal performance. Its dual-function structure eliminates external diode placement while maintaining independent control of the MOSFET gate-critical for precise timing in synchronous rectification.
The MOSFET operates with VDS = 30 V, VGS = ±20 V, and supports continuous drain current up to 8.3 A at 25°C. The Schottky diode provides fast reverse recovery (trr = 36 ns) and low Qrr (41 nC), minimizing switching losses and shoot-through risk in high-frequency converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 5 V/3.3 V buck converter input stages |
| RDS(on) | 17 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 7 A RMS in synchronous FET position |
| QG | 9.5 nC - Low gate drive energy reduces controller loading and improves light-load efficiency |
| VSD | 0.54 V @ IS = 3 A, 25°C - Schottky forward drop lower than body diode, cutting conduction loss by >40% |
| RθJA | 50 °C/W - Thermal rating measured on 1-inch² copper board; enables 2.5 W dissipation at TA = 70°C |
| IF(AV) | 3.7 A @ 25°C - Average forward current rating for Schottky diode portion under continuous conduction mode |
| trr | 36 ns - Fast recovery minimizes dead-time loss and prevents cross-conduction in synchronous topology |
Pinout & Package
IRF7807VD2TRPBF uses a modified SO-8 (JEDEC MS-012AA) package with enhanced thermal leadframe. Pin 1–8 are arranged in standard SO-8 top view layout, with shared source/drain terminals between MOSFET and Schottky diode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (MOSFET & Schottky) | Common source node; connects to ground or low-side return path in buck topology |
| 4 | Gate (MOSFET only) | Exclusive MOSFET control terminal; no Schottky connection - enables independent switching |
| 5, 6, 7, 8 | Drain (MOSFET & Schottky Anode) | Shared drain/anode node; ties to switch node (LX) and output inductor in buck converter |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged MOSFET + Schottky | Eliminates discrete diode placement, reducing PCB area by ~30% and parasitic inductance |
| Low RDS(on) + low VSD | Combined conduction loss <0.8 W at 5 A, 300 kHz, outperforming discrete solutions |
| Optimized gate charge profile | QGS2 = 1.0 nC ensures rapid Miller plateau transition, reducing switching time and EMI |
| Enhanced SO-8 thermal leadframe | RθJL = 20 °C/W enables direct heat transfer to PCB copper, improving power density |
| Lead-free (PbF) and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1; suitable for vapor-phase reflow |
Applications
| Mobile PC VRM | USB-C PD Buck Converter |
|---|---|
Use Scenario: 5 V/3.3 V point-of-load regulation in ultrabooks using multiphase buck with 300–600 kHz switching. IC Role / Device Role / Timing Role: Synchronous FET (Q2) operating in continuous conduction mode; driven by dedicated gate driver IC. Use Value: 0.54 V Schottky VSD cuts diode conduction loss by 65% vs. body diode, raising full-load efficiency to >94%. | Use Scenario: Secondary-side 20 V→5 V buck stage in USB-C power delivery adapters with 500 kHz operation. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; gate driven by controller with adaptive dead-time control. Use Value: 36 ns trr and 41 nC Qrr prevent reverse recovery spikes, eliminating need for snubbers and reducing EMI filter size. |
| Industrial SMPS Auxiliary Rail | Medical Portable Monitor DC-DC |
Use Scenario: Isolated auxiliary 12 V→3.3 V supply in industrial PLC power modules with 250 kHz fixed-frequency operation. IC Role / Device Role / Timing Role: Control FET (Q1) in primary-side synchronous rectification; gate driven by transformer-coupled driver. Use Value: 17 mΩ RDS(on) limits conduction loss to <0.3 W at 4 A, supporting derated thermal design over –40°C to +85°C ambient. | Use Scenario: Battery-powered patient monitor requiring ultra-low standby current and high light-load efficiency. IC Role / Device Role / Timing Role: Synchronous FET in discontinuous conduction mode (DCM) buck; gate driven with pulse-skipping control. Use Value: 9.5 nC QG enables efficient gate drive at 10–50 kHz burst mode, achieving <10 µA quiescent current in sleep state. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | RDS(on) = 14 mΩ, QG = 12.5 nC, no integrated Schottky | Requires external Schottky; higher board cost but better thermal separation | Preferred when discrete optimization is needed for >10 A loads or >1 MHz operation |
| DMN3025LFG-7 | RDS(on) = 25 mΩ, QG = 7.2 nC, Schottky not co-packaged | Lower gate charge but higher conduction loss; needs separate diode routing | Used where gate drive strength is limited and peak efficiency >92% is acceptable |
Compared with Si7842DP-T1-GE3 and DMN3025LFG-7, IRF7807VD2TRPBF delivers superior board-level integration and lower system-level conduction loss, making it optimal for space-constrained, sub-5 A synchronous buck designs where thermal coupling between MOSFET and diode is not detrimental.
Availability
IRF7807VD2TRPBF is available at Aetrix Electronics and suitable for mobile PC VRMs, USB-C PD secondary-side converters, and medical portable monitor DC-DC supplies requiring stable component supply and long-term lifecycle support.
Supply support for IRF7807VD2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon-based power semiconductors.
The FETKY™ product line was developed to address board space and efficiency constraints in portable power conversion, combining HEXFET® MOSFETs and Schottky diodes into thermally optimized co-packaged solutions for synchronous rectification.
FAQ
Is IRF7807VD2TRPBF pin-compatible with standard SO-8 MOSFETs?
No - IRF7807VD2TRPBF uses a modified SO-8 footprint with shared drain/source terminals between MOSFET and Schottky diode. Pins 1–3 are common source, pins 5–8 are common drain/anode, and pin 4 is gate-only. Standard SO-8 MOSFET footprints will not accommodate its internal co-pack topology without layout revision.
Can the Schottky diode be used independently of the MOSFET?
No - the Schottky anode is internally tied to the MOSFET drain (pins 5–8), and the cathode is tied to the MOSFET source (pins 1–3). There is no isolated Schottky terminal; both devices share the same source and drain nodes, making independent operation impossible.
What is the maximum recommended switching frequency for IRF7807VD2TRPBF?
Based on Qsw = 3.4 nC and RDS(on) = 17 mΩ, the device is optimized for 200–600 kHz operation in synchronous buck converters. At 1 MHz, switching losses dominate, and junction temperature rise exceeds safe limits unless derated to ≤3 A continuous current with aggressive PCB copper cooling.
Does IRF7807VD2TRPBF require a gate resistor for stability?
Yes - a 2–5 Ω series gate resistor is recommended to dampen ringing caused by QGD/QGS2 interaction and PCB trace inductance. Without it, dV/dt-induced false turn-on may occur at the switching node, especially above 300 kHz or with >10 A load transients.
IRF7807VD2TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7807VD2TRPBF FAQ
1.How can I place an order for IRF7807VD2TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7807VD2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7807VD2TRPBF reliable?
The price and inventory of IRF7807VD2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807VD2TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7807VD2TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807VD2TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7807VD2TRPBF?
IRF7807VD2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7807VD2TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7807VD2TRPBF?
For technical support, including IRF7807VD2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807VD2TRPBF requirements.
6.How does Aetrix verify that IRF7807VD2TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7807VD2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807VD2TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7807VD2TRPBF?
All IRF7807VD2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807VD2TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7807VD2TRPBF part is unused and in its original packaging.
Return procedure for IRF7807VD2TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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