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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807VPBF

Name: IRF7807VPBF
Brand: Infineon Technologies
SKU: IRF7807VPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807VPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807VPBF.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7807VPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, designed as a control FET and synchronous FET in mobile DC-DC converters. It delivers 17 mΩ R_DS(on) at V_GS = 4.5 V, 9.5 nC total gate charge, and 12 nC output charge, enabling high-efficiency operation in 3.3 V and 5 V point-of-load supplies for mobile microprocessors.

For engineers reviewing the IRF7807VPBF datasheet, IRF7807VPBF pinout, IRF7807VPBF application, or IRF7807VPBF equivalent, key selection criteria include low Q_GD/Q_GS1 ratio for C_dv/dt immunity, body diode Q_rr of 41 nC with parallel Schottky, and validated performance in synchronous buck topologies up to 24 V input.

Technical Context

This MOSFET is engineered for dual-role use in synchronous buck converters: as the high-side control FET (Q1), where conduction loss (I_rms² × R_DS(on)) and switching loss (driven by Q_GD, Q_SW, Q_OSS) are both critical; and as the low-side synchronous FET (Q2), where R_DS(on), Q_OSS, and Q_rr directly impact light-load efficiency and shoot-through risk.

Its gate charge profile is segmented into Q_GS1 (2.3 nC) and Q_GS2 (1.0 nC), with Q_GS2 specifically governing the Miller plateau duration during turn-on - a design-critical parameter for minimizing overlap losses in high-frequency (>500 kHz) converters powering modern mobile SoCs.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on)	17 mΩ max at V_GS = 4.5 V - enables <1.2 W conduction loss at 7 A RMS in compact 3.3 V/5 V POL stages
Q_G	9.5 nC typ - reduces gate drive power loss and allows use with low-current PWM controllers
Q_OSS	12 nC typ at V_DS = 16 V - limits energy dissipated per cycle during hard-switching transitions
Q_rr	41 nC with 10BQ040 Schottky - minimizes reverse recovery loss transfer to control FET in synchronous operation
V_DS	30 V - supports 24 V input rails with 20 % derating margin for transient overvoltage
I_D	6.6 A continuous at T_A = 25 °C - sufficient for 5 A load current with thermal margin on 1-in² copper board
R_θJA	50 °C/W - defines junction-to-ambient thermal rise under standard PCB layout, critical for thermal design validation

Pinout & Package

IRF7807VPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal and current handling. The package supports reflow soldering and is lead-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected high-current path for main power flow; electrically tied to heat sink via exposed pad
5	Gate (G)	Control terminal requiring <10 nC charge for full enhancement; sensitive to C_dv/dt coupling from switching node
Source (S)	Source (S)	Reference node for gate drive and current sensing; pins 5 and 6 are internally isolated - S is pin 5 only

Key Features

Feature	Design Value
Split gate charge (Q_GS1/Q_GS2)	Enables precise timing of Miller plateau onset - critical for optimizing dead-time control in synchronous buck ICs
Low Q_GD/Q_GS1 ratio	Reduces susceptibility to parasitic turn-on during high dV/dt transitions at the switch node
100% R_G tested	Ensures consistent gate resistance across production lots - vital for predictable switching speed and EMI behavior
Body diode with low Q_rr	41 nC reverse recovery charge measured with external 10BQ040 Schottky - lowers cross-conduction loss in discontinuous mode

Applications

Mobile PC Core Voltage Regulator

Ultrabook DDR Memory Supply

Use Scenario: 3.3 V synchronous buck converter delivering up to 5 A to Intel Core i-series CPU cores.

IC Role / Device Role / Timing Role: Dual-role MOSFET serving as both control FET (Q1) and synchronous FET (Q2) in single-phase topology.

Use Value: Eliminates need for separate optimized devices - reduces BOM count and layout area while maintaining >92 % peak efficiency at 24 V input.

Use Scenario: Compact 1.2 V DDR4 memory rail operating at 500 kHz with tight transient response requirements.

IC Role / Device Role / Timing Role: Low-R_DS(on) synchronous FET (Q2) paired with dedicated controller, leveraging low Q_OSS for fast turn-off.

Use Value: Q_OSS = 12 nC ensures minimal energy loss during 100 ns turn-off window, preserving voltage regulation during burst-mode load steps.

Tablet SoC PMIC Output Stage

Portable SSD NVMe Power Rail

Use Scenario: Dual-output PMIC supplying 0.85 V core and 1.8 V I/O from shared 3.3 V intermediate bus.

IC Role / Device Role / Timing Role: Control FET (Q1) in high-side configuration, selected for low Q_SW = 3.4 nC to minimize switching loss at 1 MHz.

Use Value: Q_SW = 3.4 nC enables clean 10 ns rise/fall times with 2 Ω gate resistor - essential for stable loop bandwidth in small-footprint designs.

Use Scenario: 3.3 V → 1.8 V buck converter powering PCIe Gen4 NVMe controller in thin client SSD modules.

IC Role / Device Role / Timing Role: Synchronous FET (Q2) operating with forced continuous conduction mode (FCCM) under all loads.

Use Value: R_DS(on) = 17 mΩ maintains <150 mW conduction loss at 3 A, while low Q_rr prevents shoot-through during rapid load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 14.5 mΩ @ 4.5 V, Q_G = 12.5 nC, SO-8	Higher gate charge increases driver loss but lower R_DS(on) improves heavy-load efficiency	Preferred when thermal headroom is constrained and gate drive capability permits higher Q_G
DMN3025LSD	R_DS(on) = 25 mΩ @ 4.5 V, Q_G = 7.2 nC, SO-8	Lower Q_G eases gate drive design but higher R_DS(on) raises conduction loss above 3 A	Preferred for space-constrained layouts where gate drive current is limited and load currents stay ≤3 A

Compared with IRF7807VPBF, SiR872DP trades higher switching loss for lower conduction loss, while DMN3025LSD favors ultra-low drive burden at the expense of resistive heating - making IRF7807VPBF the balanced choice for 3–6 A mobile POL applications demanding both efficiency and layout simplicity.

Availability

IRF7807VPBF is available at Aetrix Electronics and suitable for mobile DC-DC converters, ultrabook power management units, and portable SSD voltage regulation requiring stable component supply and long-term lifecycle support.

Supply support for IRF7807VPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.

The IRF7807VPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in battery-powered computing platforms where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for operation between 4.5 V and 10 V. Applying 12 V or higher risks accelerated gate oxide degradation over time, especially at elevated junction temperatures (>125 °C). For robust long-term reliability in mobile applications, 5 V to 8 V gate drive is recommended.

Can IRF7807VPBF be used as a standalone synchronous rectifier without a dedicated gate driver?

No - it requires active gate control. The MOSFET lacks internal self-driven circuitry and has no integrated bootstrap diode or level-shifter. Its gate threshold voltage (1.0–3.0 V) and 9.5 nC gate charge necessitate a dedicated gate driver IC capable of sourcing/sinking ≥1 A peak current to achieve sub-20 ns switching transitions required in synchronous buck topologies.

How does the SO-8 package's thermal performance compare to thermally enhanced variants like PowerSO-8?

The standard SO-8 package has R_θJA = 50 °C/W on 1-inch² copper, whereas PowerSO-8 variants typically achieve ≤35 °C/W. IRF7807VPBF's SO-8 relies on multiple drain pins and PCB copper area for heat spreading; it is not rated for >6.6 A continuous without careful thermal layout. For >8 A applications, a thermally enhanced package or paralleling is required.

Is the body diode suitable for freewheeling in non-synchronous operation?

Yes - the intrinsic body diode has V_SD ≤ 1.2 V at 7 A and Q_rr = 41 nC with external Schottky assist. However, its reverse recovery is not soft, and unassisted operation above 1 A causes significant switching loss and EMI. For non-synchronous use, pairing with a parallel Schottky (e.g., 10BQ040) is mandatory to limit recovery-related losses and voltage spikes.

IRF7807VPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807VPBF FAQ

1.How can I place an order for IRF7807VPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807VPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807VPBF reliable?

The price and inventory of IRF7807VPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807VPBF is usually 5 days.

3.What payment methods are accepted for IRF7807VPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807VPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807VPBF?

IRF7807VPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807VPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807VPBF?

For technical support, including IRF7807VPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807VPBF requirements.

6.How does Aetrix verify that IRF7807VPBF is sourced from the original manufacturer or authorized distributors?

All IRF7807VPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807VPBF meets industry standards.

7.What is the process for return or replacement of IRF7807VPBF?

All IRF7807VPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807VPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807VPBF part is unused and in its original packaging.

Return procedure for IRF7807VPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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