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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807VTR

Name: IRF7807VTR
Brand: Infineon Technologies
SKU: IRF7807VTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807VTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807VTR.pdf

Description:: MOSFET N-CH 30V 8.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,375

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Product details

Overview

IRF7807VTR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in SO-8 package, optimized as a control FET and synchronous rectifier in mobile DC-DC converters. It delivers R_DS(on) = 17 mΩ at V_GS = 4.5 V, Q_G = 9.5 nC, Q_OSS = 12 nC, and supports 30 V V_DS, enabling high-efficiency 3.3 V and 5 V point-of-load regulation for microprocessor power delivery.

For engineers reviewing the IRF7807VTR datasheet, IRF7807VTR pinout, IRF7807VTR application, or IRF7807VTR equivalent, this device is selected for low-conduction-loss and low-switching-loss operation in dual-FET synchronous buck topologies - especially where gate charge partitioning (Q_GS2, Q_GD) and C_dv/dt immunity critically impact light-load efficiency and shoot-through risk.

Technical Context

This MOSFET employs HEXFET technology with split gate charge characterization (Q_GS1 = 2.3 nC, Q_GS2 = 1.0 nC, Q_GD = 2.4 nC), enabling precise modeling of turn-on delay and Miller plateau behavior in high-frequency synchronous buck controllers. Its R_DS(on) remains stable across −55 °C to 150 °C junction temperature, with normalized on-resistance ≤ 2.0× at T_J = 150 °C.

The device is rated for 6.6 A continuous drain current (T_A = 70 °C), 66 A pulsed drain current, and features a body diode with V_SD = 1.2 V (I_S = 7.0 A), Q_rr = 41 nC (with 10BQ040 Schottky), supporting bidirectional conduction in synchronous rectification mode without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in mobile DC-DC systems.
R_DS(on)	17 mΩ @ V_GS = 4.5 V - Enables ≤ 0.8 W conduction loss at 6.6 A RMS, critical for thermal management in compact PCB layouts.
Q_G	9.5 nC - Total gate charge determines driver strength requirement; low value reduces gate drive power and enables >1 MHz switching.
Q_OSS	12 nC @ V_DS = 16 V - Output capacitance charge directly impacts hard-switching loss and dead-time optimization in synchronous buck stages.
Q_RR	41 nC - Reverse recovery charge of integrated body diode affects cross-conduction loss and EMI in discontinuous conduction mode (DCM).
T_J Range	−55 °C to +150 °C - Qualified for consumer-grade mobile applications with full parametric performance over industrial temperature extremes.
R_θJA	50 °C/W - Thermal resistance from junction-to-ambient on 1-inch² copper board; defines maximum power dissipation under natural convection.

Pinout & Package

IRF7807VTR is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package supports automated reflow assembly and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected drain terminals provide low-inductance, high-current path to output node; shared thermal mass improves power dissipation.
5	Gate (G)	Single gate input requiring <2.8 Ω series resistance to suppress ringing; sensitive to C_dv/dt due to Q_GD/Q_GS1 ratio of ~1.04.
Source (S)	Source (S)	Internally connected to pins 5 (gate) reference and external source node; forms return path for load current and gate drive loop.

Key Features

Feature	Design Value
Split gate charge (Q_GS1/Q_GS2)	Q_GS1 = 2.3 nC, Q_GS2 = 1.0 nC - Enables accurate timing of Miller plateau and minimizes overlap loss during turn-on in high-side FETs.
Low Q_OSS / Q_G ratio	12 nC / 9.5 nC ≈ 1.26 - Reduces capacitive switching loss relative to drive energy, improving efficiency at >500 kHz switching frequencies.
Body diode Q_RR specification	41 nC with 10BQ040 Schottky - Allows reliable synchronous rectification without external diode clamping in 3.3 V/5 V buck converters.
100% R_G tested	R_G = 0.9–2.8 Ω - Ensures consistent gate drive timing and eliminates batch-dependent shoot-through risk in production designs.

Applications

Mobile PC VRM

USB-C PD Buck Converter

Use Scenario: Dual-phase 3.3 V/5 V VRM supplying Intel Core i-series CPUs in ultrabooks.

IC Role / Device Role: Paired as control FET (high-side) and synchronous FET (low-side) in interleaved buck stages.

Use Value: Identical R_DS(on) and Q_G enable matched timing and balanced thermal distribution, reducing phase current imbalance and improving transient response.

Use Scenario: 20 V input to 5 V/3 A USB-C Power Delivery output stage in portable chargers.

IC Role / Device Role: Synchronous rectifier FET replacing Schottky diode in secondary-side buck conversion.

Use Value: 1.2 V V_SD and 41 nC Q_RR cut conduction loss by >40% vs. 40 V Schottky, raising full-load efficiency from 89% to 93%.

Smartphone PMIC Load Switch

IoT Edge Node DC-DC Regulator

Use Scenario: 3.8 V battery-fed 1.2 V core rail for application processor in LTE smartphones.

IC Role / Device Role: High-side load switch with integrated reverse-blocking capability.

Use Value: 30 V V_DS rating accommodates battery overvoltage transients; low R_DS(on) limits dropout to <8 mV at 3 A.

Use Scenario: 12 V to 3.3 V step-down for ARM Cortex-M7 MCU and BLE radio in industrial sensor nodes.

IC Role / Device Role: Primary switching element in fixed-frequency 600 kHz buck converter.

Use Value: 9.5 nC Q_G allows use of low-cost 1-A peak gate driver ICs (e.g., TI UCC27517), reducing BOM cost by $0.12/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3 (Vishay)	R_DS(on) = 14.5 mΩ @ 4.5 V, Q_G = 12.5 nC, Q_OSS = 18 nC - Lower on-resistance but higher gate/output charge.	Better conduction loss at high current; higher switching loss above 1 MHz due to elevated Q_OSS.	Select when thermal headroom is constrained and switching frequency ≤ 750 kHz.
DMN3025LFG-7 (Diodes Inc.)	R_DS(on) = 25 mΩ @ 4.5 V, Q_G = 6.8 nC, Q_OSS = 8.5 nC - Higher on-resistance but lowest gate/output charge in class.	Superior light-load efficiency and C_dv/dt immunity; limited to ≤ 4 A continuous current.	Select for battery-powered IoT devices requiring >95% efficiency at 100 mA–1 A loads.

Compared with SiR872DP-T1-GE3 and DMN3025LFG-7, IRF7807VTR offers the best balance of conduction loss (17 mΩ), gate drive demand (9.5 nC), and output capacitance (12 nC) for 3–6 A, 500 kHz–1 MHz mobile DC-DC converters where both heavy-load efficiency and transient response matter.

Availability

IRF7807VTR is available at Aetrix Electronics and suitable for mobile PC VRMs, USB-C PD buck converters, smartphone PMIC load switches, and IoT edge node DC-DC regulators requiring stable component supply and long-term manufacturability.

Supply support for IRF7807VTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with vertical integration from silicon design to packaging.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space-constrained mobile and portable electronics.

FAQ

Is IRF7807VTR suitable for synchronous rectification in a 5 V output buck converter?

Yes. Its 1.2 V body diode forward voltage (V_SD) and 41 nC reverse recovery charge (Q_rr)-measured with parallel 10BQ040 Schottky-enable efficient synchronous rectification at 5 V output without external diode clamping. The low Q_OSS (12 nC) further reduces turn-off loss during dead-time transitions.

What is the maximum recommended gate resistor for IRF7807VTR in a 1 MHz buck converter?

Based on measured R_G = 0.9–2.8 Ω and Q_G = 9.5 nC, a 2.2 Ω series gate resistor is recommended for 1 MHz operation. This value suppresses ringing while maintaining <20 ns turn-on delay (t_d(on) = 6.3 ns typical) and avoids excessive gate drive power dissipation (>15 mW per FET).

Does IRF7807VTR require a negative gate turn-off voltage to prevent C_dv/dt induced turn-on?

No. Its Q_GD/Q_GS1 ratio is 2.4/2.3 ≈ 1.04, minimizing Miller feedback sensitivity. With proper PCB layout (short gate loop, ground plane under SO-8), stable operation is achieved using 0 V to 5 V gate drive without negative turn-off bias in typical 24 V input buck converters.

Can IRF7807VTR be used in parallel configurations for higher current handling?

Yes. Its positive temperature coefficient of R_DS(on) (normalized to ≤2.0× at 150 °C) ensures inherent current sharing. Parallel operation requires matched gate drive paths and symmetrical thermal mounting; derating to 80% of total rated current (e.g., two devices → ≤10.6 A continuous) is recommended for reliability.

IRF7807VTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807VTR FAQ

1.How can I place an order for IRF7807VTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807VTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807VTR reliable?

The price and inventory of IRF7807VTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807VTR is usually 5 days.

3.What payment methods are accepted for IRF7807VTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807VTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807VTR?

IRF7807VTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807VTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807VTR?

For technical support, including IRF7807VTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807VTR requirements.

6.How does Aetrix verify that IRF7807VTR is sourced from the original manufacturer or authorized distributors?

All IRF7807VTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807VTR meets industry standards.

7.What is the process for return or replacement of IRF7807VTR?

All IRF7807VTR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807VTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807VTR part is unused and in its original packaging.

Return procedure for IRF7807VTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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