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Infineon Technologies IRF7807VTRPBF
- Part No.:
- IRF7807VTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7807VTRPBF.pdf
- Description:
- MOSFET N-CH 30V 8.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,319
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Product details
Overview
IRF7807VTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in SO-8 package, optimized as a control FET and synchronous FET in mobile DC-DC converters. It delivers 17 mΩ RDS(on) at VGS = 4.5 V, 9.5 nC total gate charge, and 12 nC output charge, enabling high-efficiency 3.3 V and 5 V point-of-load regulation for microprocessor power delivery.
For engineers reviewing the IRF7807VTRPBF datasheet, IRF7807VTRPBF pinout, IRF7807VTRPBF application, or IRF7807VTRPBF equivalent, key selection criteria include low QGD/QGS1 ratio to suppress CdV/dt turn-on in synchronous buck topologies, body diode reverse recovery performance (Qrr = 41 nC), and validated thermal resistance (RθJA = 50 °C/W on 1-inch2 copper).
Technical Context
This MOSFET employs HEXFET technology with split gate charge architecture: QGS1 = 2.3 nC (pre-threshold) and QGS2 = 1.0 nC (post-threshold), enabling precise timing control during voltage transition. Its QGD = 2.4 nC and QOSS = 12 nC directly determine switching loss in high-frequency buck converters operating up to 1 MHz.
The device supports dual-role implementation - as control FET (Q1) where QGS2 minimization reduces turn-on delay loss, and as synchronous FET (Q2) where low RDS(on) and fast body diode recovery (trr not specified but Qrr = 41 nC with 10BQ040 Schottky) mitigate shoot-through and conduction loss under light load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) | 17 mΩ max at VGS = 4.5 V - enables ≤1.2 W conduction loss at 7 A RMS in 3.3 V/5 V POL stages |
| QG | 9.5 nC typ - determines gate drive power loss (Pdrive = QG × VG × f) at 1 MHz switching |
| QOSS | 12 nC typ at VDS = 16 V - sets energy loss per cycle in output capacitance discharge/recharge |
| VDS | 30 V - supports input rails up to 24 V with 20 % margin for transient overshoot in mobile systems |
| ID | 6.6 A continuous at TA = 25 °C - sufficient for 5 A output current with 30 % derating in compact SO-8 layout |
| VGS(th) | 1.0–3.0 V - ensures reliable turn-on with 3.3 V logic-level gate drivers without level-shifting |
| RθJA | 50 °C/W - requires ≥1 inch² copper pour for ≤100 °C junction rise at full load in ambient 50 °C |
Pinout & Package
IRF7807VTRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package measures 4.9 mm × 6.0 mm × 1.75 mm and supports lead-free reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Parallel-connected high-current path tied to input rail; electrically and thermally coupled to PCB copper pour |
| 5 | Gate (G) | Control terminal requiring <2.5 Ω series resistance to limit dI/dt and suppress oscillation during 6.3 ns turn-on delay |
| Source (S) | Source (S) | Reference node for gate drive and current sensing; pins 5 and 6 are internally isolated - S is pin 5 only |
Key Features
| Feature | Design Value |
|---|---|
| Split gate charge (QGS1/QGS2) | 2.3 nC / 1.0 nC - isolates threshold crossing from current ramp phase, enabling accurate dead-time control |
| Low QGD/QGS1 ratio | 2.4 nC / 2.3 nC ≈ 1.04 - minimizes Miller-induced false turn-on during high dV/dt transitions at switch node |
| Body diode Qrr | 41 nC with 10BQ040 Schottky - reduces reverse recovery loss transferred to control FET and limits voltage spike during freewheeling |
| 100 % RG tested | 0.9–2.8 Ω gate resistance - ensures consistent gate drive timing and eliminates need for external gate resistor tuning |
Applications
| Mobile PC Core Voltage Regulator | USB-C PD Buck Converter |
|---|---|
|
Use Scenario: 3.3 V/5 V step-down converter supplying Intel Core i-series CPU core voltage (VCC) with 0–5 A dynamic load. IC Role / Device Role: Dual-role MOSFET - used as both control FET (Q1) and synchronous FET (Q2) in single-phase buck stage. Use Value: Enables >93 % peak efficiency at 24 V input due to matched RDS(on) and QG, eliminating BOM duplication and layout asymmetry. |
Use Scenario: 20 V-to-5 V/3 A USB-C Power Delivery sink converter in portable monitors and docking stations. IC Role / Device Role: Control FET (Q1) in high-side position with 30 V VDS rating accommodating 20 V ±10 % input transients. Use Value: 17 mΩ RDS(on) and 9.5 nC QG reduce conduction + switching loss to ≤1.8 W at 500 kHz, meeting thermal limits in 12 mm × 12 mm footprint. |
| Smartphone PMIC Secondary Stage | IoT Edge Node DC-DC Module |
|
Use Scenario: Secondary 1.2 V/2 A buck regulator powered from main PMIC 3.3 V rail in LTE modem subsystems. IC Role / Device Role: Synchronous FET (Q2) with low QOSS (12 nC) and fast body diode recovery (Qrr = 41 nC). Use Value: Reduces light-load switching loss by 35 % vs. standard MOSFETs, extending battery runtime during idle/sleep states. |
Use Scenario: Compact 5 V-to-3.3 V/1 A DC-DC module for industrial IoT sensors with extended temperature operation. IC Role / Device Role: Single MOSFET implementing both high-side switch and integrated freewheeling path via body diode. Use Value: Validated 150 °C TJ rating and 50 °C/W RθJA support continuous operation at 70 °C ambient with no forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 14 mΩ @ 4.5 V, QG = 11.5 nC, SO-8, same VDS = 30 V | Lower RDS(on) improves conduction loss but higher QG increases drive loss above 1 MHz | Prefer for fixed-frequency <500 kHz designs prioritizing low I2R loss over gate drive efficiency |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 4.5 V, QG = 7.5 nC, SO-8, VDS = 30 V | Higher RDS(on) increases conduction loss but lower QG reduces switching loss below 300 kHz | Prefer for cost-sensitive, low-power (<2 A) applications where gate drive simplicity outweighs conduction loss |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7807VTRPBF offers the optimal balance of RDS(on) and QG for 300–1000 kHz mobile DC-DC converters, delivering lowest total power loss across 1–5 A load range without compromising shoot-through immunity.
Availability
IRF7807VTRPBF is available at Aetrix Electronics and suitable for mobile PC voltage regulation, USB-C PD conversion, smartphone PMIC secondary stages, and IoT edge node power management requiring stable component supply and long-term lifecycle support.
Supply support for IRF7807VTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained mobile and portable electronics.
FAQ
Is IRF7807VTRPBF suitable for synchronous rectification in buck converters?
Yes - it is explicitly qualified for synchronous FET (Q2) use in buck topologies. Its 17 mΩ RDS(on), 41 nC Qrr (measured with 10BQ040 Schottky), and low QGD/QGS1 ratio minimize shoot-through risk and reverse recovery loss transfer to the control FET. Application note AN-1001 confirms dual-role validation at 3.3 V and 5 V outputs.
What is the maximum recommended switching frequency for IRF7807VTRPBF?
The device supports reliable operation up to 1 MHz, as confirmed by efficiency curves (Fig 5) showing >89 % efficiency at 5 A and 1 MHz with 24 V input. Above 1 MHz, gate drive losses (Pdrive = QG × VG × f) dominate, and thermal limits require aggressive copper area or forced cooling beyond standard SO-8 layout.
Does IRF7807VTRPBF require a gate driver IC, or can it be driven directly by a microcontroller GPIO?
A microcontroller GPIO cannot drive it directly - the 9.5 nC QG demands ≥10 mA peak current for sub-10 ns edge rates. A dedicated gate driver (e.g., IRS2001, TC4427) with 2 A peak output and <2.5 Ω series resistance is required to achieve the specified 6.3 ns td(on) and 2.2 ns tf while suppressing ringing.
How does the 100 % RG test impact circuit design?
Every unit is tested for gate resistance between 0.9 Ω and 2.8 Ω, ensuring predictable gate charging time and eliminating variability in turn-on delay and Miller plateau duration. This allows fixed gate resistor values (e.g., 2.2 Ω) without characterization per lot, simplifying layout and reducing qualification time for high-volume mobile designs.
IRF7807VTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7807VTRPBF FAQ
1.How can I place an order for IRF7807VTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7807VTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7807VTRPBF reliable?
The price and inventory of IRF7807VTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807VTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7807VTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807VTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7807VTRPBF?
IRF7807VTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7807VTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7807VTRPBF?
For technical support, including IRF7807VTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807VTRPBF requirements.
6.How does Aetrix verify that IRF7807VTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7807VTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807VTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7807VTRPBF?
All IRF7807VTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807VTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7807VTRPBF part is unused and in its original packaging.
Return procedure for IRF7807VTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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