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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807Z

Name: IRF7807Z
Brand: Infineon Technologies
SKU: IRF7807Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807Z.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,666

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Product details

Overview

IRF7807Z from Infineon Technologies is a 30V, 11A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, featuring 13.8 mΩ R_DS(on) at V_GS = 10 V, 7.2 nC total gate charge, and fully characterized avalanche capability. It serves as a control FET in notebook CPU VRMs and synchronous rectifier in POL converters for graphics cards and telecom systems.

For engineers reviewing the IRF7807Z datasheet, IRF7807Z pinout, IRF7807Z application, or IRF7807Z equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance (2.5 Ω typ.), and validated unclamped inductive switching performance up to 63 mJ at T_J = 25°C.

Technical Context

This MOSFET employs planar silicon process with integral body diode optimized for high-frequency synchronous buck topologies. Its gate threshold voltage (1.35–2.25 V) enables robust 4.5 V logic-level drive, while Q_gd/Q_gs1 ratio of ~1.3 minimizes C_dv/dt turn-on risk in high-dV/dt switching nodes.

Thermal design is supported by R_θJA = 50 °C/W (SO-8, FR-4, 1-in² copper) and R_θJL = 20 °C/W, enabling 8.7 A continuous current at T_A = 70°C. Avalanche energy rating (E_AS = 63 mJ) and 100% R_G testing ensure reliability in transient overloads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 5 V/3.3 V output POL stages.
R_DS(on) max	13.8 mΩ @ V_GS = 10 V - Enables <1.1 W conduction loss at 11 A DC, critical for high-efficiency VRM designs.
Q_g typ.	7.2 nC - Low gate charge reduces driver power loss and supports >1 MHz switching in compact converters.
I_D cont. @ T_A = 70°C	8.7 A - Sustained current capability under real-world board-level thermal conditions.
E_AS	63 mJ - Validated single-pulse avalanche energy ensures robustness against inductive switching transients.
R_G	2.5 Ω typ. - Ultra-low intrinsic gate resistance improves switching speed control and reduces ringing.
V_GS(th)	1.35–2.25 V - Tight threshold range guarantees reliable turn-on with 3.3 V or 4.5 V gate drivers.

Pinout & Package

IRF7807Z is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source terminals - confirmed per Infineon's top-view diagram and mechanical drawing PS-0019.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,7	Drain (D)	Five parallel drain connections reduce package inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with low R_G (2.5 Ω) enables fast, controlled turn-on without external gate resistor in many cases.
6,8	Source (S)	Dual-source configuration lowers source inductance and improves stability in synchronous rectification mode.

Key Features

Feature	Design Value
Very low R_DS(on) at 4.5 V V_GS	14.5 mΩ max - Ensures efficient operation directly from common 5 V or 4.5 V controller outputs without level-shifting.
Fully characterized avalanche voltage/current	63 mJ E_AS, 8.8 A I_AR - Eliminates need for external snubbers in non-isolated DC/DC converters with inductive loads.
Ultra-low gate impedance	2.5 Ω typical - Reduces gate oscillation risk and simplifies gate driver layout in high-density VRM modules.
100% tested R_G	Guaranteed 2.5–4.8 Ω - Enables predictable switching timing and consistent gate drive power calculation across production lots.
Optimized body diode	Q_rr = 17–26 nC, t_rr = 31–46 ns - Minimizes reverse recovery losses when used as synchronous rectifier in buck converters.

Applications

Notebook CPU Voltage Regulator

Graphics Card POL Converter

Use Scenario: High-current, multi-phase VRM supplying Intel/AMD mobile processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Control FET switching at 300–1000 kHz; handles high-side switching with precise duty-cycle control.

Use Value: 13.8 mΩ R_DS(on) and 7.2 nC Q_g jointly reduce total power loss below 2.5 W per phase at 11 A, enabling fanless thermal design.

Use Scenario: Point-of-load regulation for GPU core voltage (0.8–1.2 V) in space-constrained PCIe add-in cards.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in low-side position with 500 kHz–1.5 MHz switching frequency.

Use Value: Low Q_rr (17–26 nC) and fast t_rr (31–46 ns) minimize shoot-through risk and conduction loss during dead-time transitions.

Telecom DC/DC Module

Industrial Embedded Power Supply

Use Scenario: 48 V input to 3.3 V/5 V conversion in network switches and base station line cards requiring high reliability.

IC Role / Device Role / Timing Role: Primary switch in isolated forward or non-isolated buck converter; rated for continuous 8.7 A at 70°C ambient.

Use Value: R_θJA = 50 °C/W and 100% R_G test support stable thermal performance across extended temperature range (−55°C to +150°C).

Use Scenario: Compact 24 V input to 5 V/12 V conversion in programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant topology.

Use Value: Fully characterized avalanche capability (63 mJ) provides margin against bus transients and inrush currents in harsh industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7807PBF	Same die, Pb-free variant; identical R_DS(on), Q_g, and avalanche specs.	No functional difference; RoHS-compliant version for lead-free assembly.	Select when lead-free compliance is required by end-market regulations.
Si7842DP	30 V, 12 A, R_DS(on) = 12.5 mΩ @ 10 V, Q_g = 8.5 nC; trench MOSFET architecture.	Slightly lower R_DS(on) but higher Q_g; less optimized for 4.5 V drive (V_GS(th) = 1.2–2.0 V).	Prefer for marginally lower conduction loss where gate drive strength permits higher Q_g.

Compared with IRF7807Z, IRF7807PBF offers identical electrical performance with RoHS compliance, while Si7842DP trades slightly lower on-resistance for higher gate charge and reduced 4.5 V drive margin - making IRF7807Z optimal for cost-sensitive, high-frequency notebook and telecom VRMs.

Availability

IRF7807Z is available at Aetrix Electronics and suitable for notebook CPU VRMs, graphics card POL converters, and telecom DC/DC modules requiring stable component supply and long-term lifecycle support.

Supply support for IRF7807Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

The IRF7807Z belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to approximately 5.2 A based on the linear derating factor of 0.02 W/°C and R_DS(on)-limited conduction loss. This value is derived from Fig. 9 in the official datasheet and assumes SO-8 mounting on 1-in² copper.

Does IRF7807Z support 3.3 V gate drive?

No - the minimum V_GS(th) is 1.35 V, but R_DS(on) rises sharply below 4.5 V. At 3.3 V, R_DS(on) exceeds 35 mΩ (per Fig. 3 transfer curve), causing excessive conduction loss. It is specified and characterized for reliable operation at ≥4.5 V gate drive.

How is the SO-8 package thermally enhanced in this device?

The SO-8 package features an exposed drain pad on the bottom side, electrically connected to pins 1–3 and 5–7. When soldered to a thermal pad on the PCB, it achieves R_θJL = 20 °C/W, significantly improving heat transfer versus standard SO-8 variants without exposed pads.

Can IRF7807Z be used as a replacement for IRF7805Z?

No - IRF7805Z has V_DS = 20 V and R_DS(on) = 11.5 mΩ @ 10 V, while IRF7807Z is rated for 30 V and 13.8 mΩ. Substituting increases voltage margin but degrades conduction efficiency; gate charge (7.2 nC vs. 6.3 nC) and threshold (1.35–2.25 V vs. 1.2–2.0 V) also differ, affecting drive compatibility.

IRF7807Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807Z FAQ

1.How can I place an order for IRF7807Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807Z reliable?

The price and inventory of IRF7807Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807Z is usually 5 days.

3.What payment methods are accepted for IRF7807Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807Z?

IRF7807Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807Z?

For technical support, including IRF7807Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807Z requirements.

6.How does Aetrix verify that IRF7807Z is sourced from the original manufacturer or authorized distributors?

All IRF7807Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807Z meets industry standards.

7.What is the process for return or replacement of IRF7807Z?

All IRF7807Z units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807Z part is unused and in its original packaging.

Return procedure for IRF7807Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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