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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807ZPBF

Name: IRF7807ZPBF
Brand: Infineon Technologies
SKU: IRF7807ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807ZPBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7807ZPBF from Infineon Technologies is a 30V, 11A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, featuring 13.8 mΩ R_DS(on) at V_GS = 10 V, 7.2 nC total gate charge, and fully characterized avalanche capability. It serves as a control FET in notebook processor power stages and synchronous rectifier in POL converters for graphics cards and telecom systems.

For engineers reviewing the IRF7807ZPBF datasheet, IRF7807ZPBF pinout, IRF7807ZPBF application, or IRF7807ZPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 17–26 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for high-frequency DC/DC conversion. Its low 2.5 Ω gate resistance and 100% RG-tested construction ensure consistent switching timing (t_d(on) = 6.9 ns, t_f = 3.1 ns) and robust unclamped inductive switching performance up to 63 mJ E_AS.

The device integrates an integral reverse p–n junction body diode with V_SD ≤ 1.0 V at I_S = 8.8 A and trr = 31–46 ns, enabling synchronous rectification without external diodes. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −4.7 mV/°C) support stable current sharing in paralleled configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in POL converters.
R_DS(on) max	13.8 mΩ @ V_GS = 10 V - Enables <1.3 W conduction loss at 11 A DC, critical for thermally constrained notebook VRMs.
Q_g typ.	7.2 nC - Low gate drive energy reduces controller loading and enables efficient 500 kHz–1 MHz operation.
Q_gd	2.7 nC - Low Miller charge minimizes C_dv/dt turn-on risk in high-dV/dt synchronous buck nodes.
R_θJA	50 °C/W - Defines maximum power dissipation (1.6 W at T_A = 70 °C) in standard SO-8 PCB layouts.
Q_rr	17–26 nC - Quantifies body diode recovery loss transferred to high-side FET during dead-time commutation.
E_AS	63 mJ - Specifies single-pulse avalanche ruggedness for reliable operation under inductive fault conditions.

Pinout & Package

IRF7807ZPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction. Pin 1–3 and 5–7 are parallel-connected drain terminals; Pin 4 is gate; Pins 6 and 8 are source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-current output node tied to input rail; multiple pins reduce current density and parasitic inductance.
4	Gate (G)	Control input requiring <7.2 nC charge; low 2.5 Ω internal R_G ensures predictable turn-on timing.
6, 8	Source (S)	Power return path; dual-source pins lower loop inductance and improve body diode conduction uniformity.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	14.5 mΩ - Enables direct drive from 5 V controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	63 mJ E_AS @ T_J = 25 °C - Guarantees safe operation during inductive load dump or startup faults.
100% R_G-tested	2.5–4.8 Ω gate resistance - Ensures tight distribution of switching speed and eliminates need for external gate resistors.
Low Q_gd/Q_gs1 ratio	2.7 nC / 2.1 nC ≈ 1.29 - Reduces susceptibility to spurious turn-on from high dV/dt on synchronous node.

Applications

Notebook CPU Voltage Regulator

Graphics Card POL Converter

Use Scenario: High-efficiency, space-constrained 1–2 phase VRM supplying 0.8–1.5 V @ up to 45 A to mobile Intel/AMD processors.

IC Role / Device Role / Timing Role: High-side control FET switching at 300–600 kHz; handles peak currents >11 A with minimal conduction loss.

Use Value: 13.8 mΩ R_DS(on) limits I²R loss to <0.5 W per phase, enabling fanless thermal design in ultrabooks.

Use Scenario: Point-of-load converter delivering 0.9–1.2 V @ 20–30 A to GPU cores in PCIe-based graphics cards.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating with 500 kHz–1 MHz frequency and <100 ns dead time.

Use Value: Low Q_rr (17–26 nC) and fast trr (31–46 ns) minimize cross-conduction loss and reduce heating in compact GPU VRMs.

Telecom DC/DC Module

Industrial Embedded Power Supply

Use Scenario: 24 V input to 3.3/5/12 V isolated or non-isolated converters in network switches and baseband units.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or synchronous buck topologies; rated for continuous 8.7 A at 70 °C ambient.

Use Value: R_θJA = 50 °C/W and 100% avalanche testing ensure reliability across extended temperature range (−55 to +150 °C).

Use Scenario: Compact 24 V to 5 V/3.3 V power stage in programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in 300–500 kHz flyback or buck converters; operates with 4.5 V gate drive.

Use Value: 14.5 mΩ R_DS(on) @ V_GS = 4.5 V maintains efficiency >92% even with low-voltage gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7807TRPBF	Tape-and-reel packaging only; identical electrical specs and SO-8 footprint.	No difference in circuit function or layout; intended for automated SMT assembly.	Select when volume production requires reel delivery and pick-and-place compatibility.
Si7807DP-T1-GE3	Higher R_DS(on) (16 mΩ @ 10 V), lower Q_g (5.8 nC), same SO-8 package.	Better light-load efficiency due to lower gate charge, but higher conduction loss above 6 A.	Prefer for telecom POLs where switching loss dominates; avoid in high-current notebook VRMs.

Compared with IRF7807ZPBF, IRF7807TRPBF offers identical performance in tape format for SMT lines, while Si7807DP-T1-GE3 trades higher conduction loss for reduced gate drive loss-making it suitable for medium-current, high-frequency telecom supplies but less optimal for high-current notebook VRMs.

Availability

IRF7807ZPBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, graphics card POL converters, and telecom DC/DC modules requiring stable component supply and guaranteed long-term availability.

Supply support for IRF7807ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF HEXFET Power MOSFET product line targets high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies-with emphasis on low R_DS(on), controlled gate charge, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7807ZPBF supports 8.7 A continuous drain current at T_A = 70 °C with proper PCB copper area (1 in² 2 oz Cu). This rating assumes SO-8 mounting on standard FR-4 with no forced airflow and accounts for R_θJA = 50 °C/W and thermal derating beyond 25 °C ambient.

Does this MOSFET require a gate resistor for stability?

No external gate resistor is required for basic stability-the device has a tested internal R_G of 2.5–4.8 Ω. However, a small series resistor (2–10 Ω) may be added to damp ringing in high-di/dt applications or to fine-tune switching speed for EMI optimization in sensitive telecom designs.

Can IRF7807ZPBF be used as a synchronous rectifier with 5 V gate drive?

Yes-it delivers 14.5 mΩ R_DS(on) at V_GS = 4.5 V, making it fully compatible with 5 V logic-level gate drivers. Its low Q_gd/Q_gs1 ratio also mitigates C_dv/dt turn-on risk when placed on high-dV/dt nodes typical of synchronous buck outputs.

How does its body diode performance compare to Schottky alternatives?

The integrated body diode has V_SD ≤ 1.0 V and trr = 31–46 ns-higher forward drop and slower recovery than discrete Schottkys, but eliminates component count and layout complexity. For <1 MHz operation with moderate current (<15 A), it provides acceptable efficiency; above that, external Schottky clamping may be preferred.

IRF7807ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807ZPBF FAQ

1.How can I place an order for IRF7807ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807ZPBF reliable?

The price and inventory of IRF7807ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807ZPBF is usually 5 days.

3.What payment methods are accepted for IRF7807ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807ZPBF?

IRF7807ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807ZPBF?

For technical support, including IRF7807ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807ZPBF requirements.

6.How does Aetrix verify that IRF7807ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF7807ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807ZPBF meets industry standards.

7.What is the process for return or replacement of IRF7807ZPBF?

All IRF7807ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807ZPBF part is unused and in its original packaging.

Return procedure for IRF7807ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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