Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807ZTR

Name: IRF7807ZTR
Brand: Infineon Technologies
SKU: IRF7807ZTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7807ZTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807ZTR.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,012

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7807ZTR from Infineon Technologies (formerly International Rectifier) is a 30V, 11A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a control FET in notebook CPU VRMs and synchronous rectifier in POL converters for graphics cards and telecom systems. It delivers 11 mΩ R_DS(on) at V_GS = 10 V, 7.2 nC total gate charge, and 100% tested gate resistance (R_G = 2.5 Ω typ).

For engineers reviewing the IRF7807ZTR datasheet, IRF7807ZTR pinout, IRF7807ZTR application, or IRF7807ZTR equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance for fast switching in high-frequency DC/DC stages, avalanche ruggedness (63 mJ E_AS), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and integral body diode optimized for synchronous rectification. Its gate threshold voltage (1.35–2.25 V) enables robust 4.5 V logic-level drive compatibility, while low Q_gd/Q_gs1 ratio minimizes C_dv/dt turn-on risk in high-dV/dt node applications.

Thermal design is supported by validated junction-to-drain (R_θJL = 20 °C/W) and junction-to-ambient (R_θJA = 50 °C/W) resistance values, and its SO-8 footprint allows direct PCB thermal relief via exposed drain pads. Avalanche energy rating (E_AS = 63 mJ at T_J = 25°C) is specified under clamped inductive load conditions per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in notebook and telecom POL stages.
R_DS(on) max	13.8 mΩ @ V_GS = 10 V - Enables <1.3 W conduction loss at 11 A DC, critical for high-efficiency CPU core power delivery.
Q_g typ.	7.2 nC - Low gate charge reduces driver power and switching transition time, supporting >1 MHz operation in modern VRMs.
I_D cont. @ T_A = 25°C	11 A - Continuous current rating verified under standard SO-8 board-mount conditions, suitable for single-phase control FETs.
E_AS	63 mJ - Single-pulse avalanche energy ensures survivability during output short-circuit or startup faults without external snubbing.
R_G typ.	2.5 Ω - Fully tested gate resistance improves gate drive stability and dV/dt immunity in high-noise converter nodes.

Pinout & Package

IRF7807ZTR is housed in a surface-mount SO-8 package with exposed drain paddle for enhanced thermal dissipation. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source. The top view shows standard dual-drain configuration for paralleling internal cells.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,7	Drain (D)	Five parallel-connected drain terminals tied to exposed paddle - provides low-inductance, high-current path and thermal interface to PCB copper.
4	Gate (G)	Single gate input - low capacitance (C_iss = 770 pF) and controlled R_G enable clean edge control with minimal ringing.
6,8	Source (S)	Two dedicated source terminals - reduce source inductance to improve switching stability and body diode recovery behavior.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	14.5 mΩ max - ensures full enhancement with 5 V logic drivers, eliminating need for level-shifting in compact VRM designs.
Fully characterized avalanche	63 mJ E_AS at 25°C - eliminates derating for inductive fault stress in non-isolated buck converters.
Low gate impedance	2.5 Ω typical R_G - suppresses gate oscillation and improves noise immunity in high-dV/dt synchronous rectifier nodes.
Optimized body diode	Q_rr = 17–26 nC, t_rr = 31–46 ns - reduces reverse recovery loss and cross-conduction risk when used as synchronous rectifier.

Applications

Notebook CPU Voltage Regulator Module (VRM)

Graphics Card Point-of-Load (POL) Converter

Use Scenario: High-current, multi-phase buck converter supplying dynamic CPU core voltage (0.7–1.5 V) with rapid load transients up to 100 A/µs.

IC Role / Device Role / Timing Role: Control FET switching at 300–1000 kHz; handles high-side switching with precise duty-cycle control and low conduction loss.

Use Value: 11 mΩ R_DS(on) and 7.2 nC Q_g minimize both conduction and switching losses, enabling >92% efficiency at 15 A per phase.

Use Scenario: Compact, high-density DC/DC module delivering 0.8–1.2 V to GPU memory or core, operating at ≥500 kHz with tight regulation.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET); commutates current during freewheeling interval with minimal forward drop and fast recovery.

Use Value: Low Q_rr (17 nC typ.) and soft-recovery body diode reduce shoot-through risk and boost efficiency by 1.2% vs. Schottky alternatives.

Telecom Base Station POL Supply

Industrial Embedded DC/DC Converter

Use Scenario: Distributed power architecture feeding FPGA, ASIC, or DSP loads in 48 V intermediate bus systems with strict thermal constraints.

IC Role / Device Role / Timing Role: Primary control FET in isolated or non-isolated buck converter; operates with 12 V gate drive and withstands 40 V transients.

Use Value: 30 V V_DS rating and 150°C T_J max allow reliable operation in high-ambient telecom cabinets without forced air cooling.

Use Scenario: Ruggedized 24 V input DC/DC for programmable logic controllers (PLCs) or motor drives requiring long-term reliability and surge tolerance.

IC Role / Device Role / Timing Role: High-side switch in half-bridge or synchronous buck stage; subjected to repetitive UIS events during motor stall or line surges.

Use Value: 100% tested R_G and 63 mJ E_AS ensure consistent avalanche performance across production lots, reducing field failure risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 12.5 nC; SO-8, same pinout	Higher conduction efficiency but slower switching due to higher gate charge - better for lower-frequency, high-current VRMs	Select when minimizing I²R loss dominates over switching loss; verify gate driver can supply higher peak current.
Si7852DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 6.8 nC; thermally enhanced PowerPAK® SO-8	Superior R_θJA (35 °C/W) and 4.5 V drive optimization - ideal for space-constrained, fanless telecom modules	Choose for improved thermal margin in sealed enclosures; requires layout adaptation for PowerPAK® footprint.

Compared with IRF7807ZTR, IRF7832TRPBF trades higher gate charge for lower R_DS(on), favoring conduction-limited designs, while Si7852DP-T1-GE3 offers better thermal performance and 4.5 V drive headroom at the cost of footprint compatibility.

Availability

IRF7807ZTR is available at Aetrix Electronics and suitable for notebook VRMs, graphics card POL converters, and telecom base station power supplies requiring stable component supply and long-lifecycle support.

Supply support for IRF7807ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7807ZTR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche robustness are essential.

FAQ

Is IRF7807ZTR suitable for 5 V gate drive applications?

Yes. With a gate threshold voltage range of 1.35–2.25 V and guaranteed R_DS(on) ≤14.5 mΩ at V_GS = 4.5 V, IRF7807ZTR is fully enhanced and rated for logic-level operation. It supports direct drive from standard 5 V PWM controllers without gate boosting.

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70°C, the continuous drain current is 8.7 A (derated from 11 A at 25°C), based on SO-8 package thermal limits and R_θJA = 50 °C/W. This assumes standard 1-in² 2-oz copper pad with no forced airflow.

Does IRF7807ZTR include integrated ESD protection?

No. IRF7807ZTR does not integrate on-chip ESD protection diodes. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended in high-noise environments such as telecom base stations or motor drive PCBs.

Can IRF7807ZTR be used as a synchronous rectifier in a 12 V input buck converter?

Yes. Its 30 V V_DS rating, low Q_rr (17–26 nC), and fast t_rr (31–46 ns) make it suitable for low-side synchronous rectification in 12 V input buck converters operating up to 1 MHz, provided gate drive timing avoids shoot-through.

IRF7807ZTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807ZTR FAQ

1.How can I place an order for IRF7807ZTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807ZTR reliable?

The price and inventory of IRF7807ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807ZTR is usually 5 days.

3.What payment methods are accepted for IRF7807ZTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807ZTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807ZTR?

IRF7807ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807ZTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807ZTR?

For technical support, including IRF7807ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807ZTR requirements.

6.How does Aetrix verify that IRF7807ZTR is sourced from the original manufacturer or authorized distributors?

All IRF7807ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807ZTR meets industry standards.

7.What is the process for return or replacement of IRF7807ZTR?

All IRF7807ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807ZTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807ZTR part is unused and in its original packaging.

Return procedure for IRF7807ZTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…