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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7807ZTRPBF

Name: IRF7807ZTRPBF
Brand: Infineon Technologies
SKU: IRF7807ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7807ZTRPBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7807ZTRPBF from Infineon Technologies is a 30V, 11A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a control FET in notebook CPU VRMs and synchronous rectifier in POL converters for graphics cards and telecom systems, featuring 13.8 mΩ R_DS(on) at V_GS = 10 V, 7.2 nC total gate charge, and 100% avalanche-tested robustness.

For engineers reviewing the IRF7807ZTRPBF datasheet, IRF7807ZTRPBF pinout, IRF7807ZTRPBF application, or IRF7807ZTRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance (2.5 Ω typ.), fully characterized unclamped inductive switching behavior, and SO-8 thermal performance with R_θJA = 50 °C/W.

Technical Context

This MOSFET operates as a high-side control switch in synchronous buck converters, where fast turn-on/turn-off dynamics (t_d(on) = 6.9 ns, t_f = 3.1 ns) and low Q_gd/Q_gs1 ratio minimize C_dv/dt induced shoot-through risk during high dV/dt node transitions. Its body diode exhibits 31–46 ns reverse recovery time and 17–26 nC Q_rr, critical for synchronous rectification efficiency.

The device is fully specified across temperature: R_DS(on) increases to 18.2 mΩ max at T_J = 125°C, V_GS(th) drifts −4.7 mV/°C, and BVDSS has +0.023 V/°C tempco - enabling accurate loss modeling in thermally constrained VRM designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in high-side switch position without breakdown under transient overvoltage conditions.
R_DS(on) max @ 10 V	13.8 mΩ - Conduction loss contributor; enables ≤1.5 W I²R loss at 11 A DC current in compact SO-8 footprint.
Q_g typ.	7.2 nC - Gate drive energy requirement; determines minimum gate driver peak current needed for <10 ns switching.
I_D @ 25°C	11 A - Continuous drain current rating at ambient; derates to 8.7 A at 70°C case temperature per SO-8 thermal limits.
E_AS	63 mJ - Single-pulse avalanche energy capability; supports reliable operation during inductive load transients without failure.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance; defines maximum power dissipation before exceeding 150°C T_J at 25°C ambient.
V_GS(th)	1.35–2.25 V - Gate threshold range; ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers in control FET role.

Pinout & Package

IRF7807ZTRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction. Pin 1 is gate (G), pins 2–4 and 6–8 are parallel-connected drains (D), and pins 5 and 7 are sources (S). The top view shows pin 1 at bottom-left corner.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts PWM signal from controller IC; low input capacitance (C_iss = 770 pF) reduces driver loading.
2,3,4,6,7,8	Drain (D)	High-side switch node connection; multiple pins reduce parasitic inductance and improve current sharing in high-frequency switching.
5,7	Source (S)	Return path for channel current; dual-source pins lower source inductance, improving stability in synchronous rectifier mode.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	14.5 mΩ max - Enables use with 4.5 V gate drive in modern low-voltage VRMs without sacrificing conduction efficiency.
Fully characterized avalanche	100% tested E_AS = 63 mJ - Guarantees ruggedness against inductive energy spikes during hard-switching events.
Low gate resistance	R_G = 2.5 Ω typ. - Reduces gate oscillation risk and improves controllability of switching edges in high-dV/dt environments.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without preconditioning.
Optimized for synchronous rectification	Q_rr = 17–26 nC, t_rr = 31–46 ns - Minimizes reverse recovery losses and cross-conduction risk when used as low-side FET.

Applications

Notebook CPU Voltage Regulator

Graphics Card POL Converter

Use Scenario: High-current, high-efficiency step-down conversion delivering up to 45 A to mobile Intel/AMD processors.

IC Role / Device Role: Control FET (high-side switch) in synchronous buck topology, driven by dedicated PWM controller.

Use Value: 13.8 mΩ R_DS(on) at 10 V and 7.2 nC Q_g enable >92% efficiency at 1 MHz switching frequency under full load.

Use Scenario: Point-of-load regulation for GPU core voltage in discrete graphics cards requiring fast transient response.

IC Role / Device Role: Synchronous rectifier (low-side FET), replacing Schottky diode to reduce forward drop and conduction loss.

Use Value: Body diode Q_rr = 26 nC max and V_SD = 1.0 V enable 3–5% efficiency gain versus diode solution at 20 A output.

Telecom DC/DC Module

Industrial Embedded Power Supply

Use Scenario: Compact 12 V input to 1.2 V/30 A output converter in network line card power subsystems.

IC Role / Device Role: Primary switching element in multiphase buck stage, operating at 500 kHz–1 MHz.

Use Value: SO-8 thermal design with R_θJA = 50 °C/W allows stable operation at 70°C ambient without heatsink in dense PCB layouts.

Use Scenario: Reliable, long-lifetime power stage in fanless industrial controllers requiring extended temperature operation.

IC Role / Device Role: High-reliability control FET in isolated or non-isolated DC/DC converter with strict MTBF requirements.

Use Value: 100% avalanche-tested construction and −55°C to +150°C T_STG/T_J rating ensure field durability under voltage surge and thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7807PBF	Same die, non-lead-free variant; identical R_DS(on), Q_g, and SO-8 footprint.	No RoHS compliance; unsuitable for lead-free assembly processes.	Select only if legacy Pb-based soldering is mandated and environmental certification is not required.
Si7842DP-T1-GE3	30 V, 12.5 A, R_DS(on) = 12.5 mΩ @ 10 V, Q_g = 8.5 nC, SO-8 package.	Slightly higher gate charge; different Q_gd/Q_gs1 ratio affects C_dv/dt immunity.	Valid alternative if margin exists in gate drive strength and shoot-through risk is mitigated via layout or gate resistor tuning.

Compared with IRF7807ZTRPBF, IRF7807PBF offers identical electrical performance but lacks RoHS compliance, while Si7842DP-T1-GE3 trades marginally lower R_DS(on) for higher Q_g and altered switching behavior - requiring validation of gate drive capability and shoot-through immunity in target topology.

Availability

IRF7807ZTRPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, graphics card POL converters, and telecom DC/DC modules requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for IRF7807ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF HEXFET® Power MOSFET product line targets high-efficiency, high-frequency DC/DC conversion in computing, telecom, and consumer power systems, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRF7807ZTRPBF at 70°C case temperature?

The maximum continuous drain current is 8.7 A at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects SO-8 package thermal limitations and ensures junction temperature remains below 150°C under steady-state conduction.

Can IRF7807ZTRPBF be driven directly by a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is 1.35–2.25 V, but R_DS(on) rises sharply below 4.5 V. At 3.3 V, R_DS(on) exceeds 25 mΩ, causing excessive conduction loss. A dedicated gate driver or level-shifting circuit is required for reliable saturation.

Does IRF7807ZTRPBF include an integrated Schottky diode?

No - it contains only the intrinsic body diode formed by the MOSFET's p-n junction. This diode has V_SD = 1.0 V max and t_rr = 31–46 ns. No external or integrated Schottky is present; synchronous rectification relies on controlled channel conduction, not diode replacement.

How is avalanche ruggedness validated for this part?

Each unit undergoes 100% production testing for unclamped inductive switching (UIS) per JEDEC JESD22-A109. Tested at I_AS = 8.8 A with L = 0.1 mH, V_DD = 15 V, yielding E_AS ≥ 63 mJ - confirming ability to absorb inductive energy without parametric shift or failure.

IRF7807ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7807ZTRPBF FAQ

1.How can I place an order for IRF7807ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807ZTRPBF reliable?

The price and inventory of IRF7807ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7807ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807ZTRPBF?

IRF7807ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807ZTRPBF?

For technical support, including IRF7807ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807ZTRPBF requirements.

6.How does Aetrix verify that IRF7807ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7807ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7807ZTRPBF?

All IRF7807ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807ZTRPBF part is unused and in its original packaging.

Return procedure for IRF7807ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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