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Infineon Technologies IRF7809AV
- Part No.:
- IRF7809AV
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7809AV.pdf
- Description:
- MOSFET N-CH 30V 13.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,215
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Product details
Overview
IRF7809AV from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET optimized for synchronous buck converter high-side and low-side switching in CPU core power delivery. It features 7.0 mΩ RDS(on) at VGS = 4.5 V, 41 nC total gate charge, 13.3 A continuous drain current at 25°C, and SO-8 package with exposed drain pads for thermal performance. It is designed for high-efficiency DC-DC conversion in microprocessor VRMs.
For engineers reviewing the IRF7809AV datasheet, IRF7809AV pinout, IRF7809AV application, or IRF7809AV equivalent, key selection criteria include RDS(on) vs. gate drive voltage, Cdv/dt immunity for synchronous FET operation, body diode Qrr (120 nC), thermal resistance (RθJA = 50°C/W), and SO-8 PCB thermal layout compatibility.
Technical Context
The IRF7809AV employs HEXFET technology to balance low on-resistance and low gate charge-critical for minimizing conduction and switching losses in high-frequency synchronous buck converters. Its 7.0 mΩ RDS(on) at 4.5 V gate drive enables efficient operation with 3.3 V or 5 V logic-level control, while its 120 nC reverse recovery charge and 130 pF Crss support robust commutation under fast dV/dt conditions.
It is characterized for dual-role use: as a low-side switch with low RDS(on) and fast body diode recovery, and as a high-side FET with high Cdv/dt immunity to prevent spurious turn-on. Thermal design leverages the SO-8's RθJL = 20°C/W junction-to-lead path and exposed drain pad for direct PCB copper thermal coupling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V input rails and transient overshoot in CPU VRMs |
| RDS(on) | 7.0 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 15 A, reducing heat sink requirements |
| QG | 41 nC - Low gate drive energy supports >1 MHz switching without excessive driver loss |
| Qrr | 120 nC - Measured at di/dt ≈ 700 A/µs; critical for minimizing cross-conduction loss in synchronous rectification |
| RθJA | 50 °C/W - Validated on 1-inch² copper board; enables 2.5 W continuous dissipation in standard PCB mount |
| ID (cont) | 13.3 A @ TA = 25°C - Sustains full load current in compact multi-phase VRM designs |
| Coss | 1060 pF @ VDS = 16 V - Low output capacitance reduces dead-time energy loss and improves light-load efficiency |
Pinout & Package
The IRF7809AV is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA) with exposed drain terminals on pins 1–4 and 6–8, gate on pin 5, and source on pins 7 and 8 (dual-source configuration). The package supports vapor phase, infrared, convection, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 8 | Drain (D) | High-current power path; all connected internally to die drain; exposed pad provides primary thermal conduction path to PCB |
| 5 | Gate (G) | Control terminal; requires ≤ ±12 V drive; low QG enables fast, low-loss switching with standard gate drivers |
| 7, 8 | Source (S) | Power return path; dual-source pins reduce package inductance and improve current sharing in parallel configurations |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on)/QG ratio | 7.0 mΩ / 41 nC = 170 Ω·nC - Delivers best-in-class figure-of-merit for 30 V synchronous FETs in VRMs |
| Cdv/dt immunity | Tested for robustness against false turn-on during high dV/dt transitions in synchronous buck topologies |
| Body diode Qrr | 120 nC with 700 A/µs di/dt - Reduces switching loss and EMI in hard-switched low-side operation |
| 100% RG tested | Gate resistance of 1.5–3.0 Ω ensures consistent turn-on speed and reduces gate oscillation risk |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery Module |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying dynamic loads up to 150 A to modern x86 or ARM processors. IC Role / Device Role / Timing Role: Low-side synchronous FET handling high di/dt currents and reverse recovery during phase interleaving. Use Value: 7.0 mΩ RDS(on) and 120 nC Qrr minimize conduction + recovery losses, enabling >92% efficiency at 12 V input / 1.0 V output. | Use Scenario: Compact, thermally constrained VRM on graphics card PCB delivering up to 300 W to GPU cores. IC Role / Device Role / Timing Role: High-side switch in 500 kHz–1 MHz buck stage, requiring fast turn-on and immunity to Miller-induced turn-on. Use Value: 41 nC QG and high Cdv/dt immunity allow reliable operation with minimal gate drive overhead and no external snubbing. |
| Server Memory Regulator | AI Accelerator Board Power Stage |
Use Scenario: Point-of-load regulator for DDR5 memory modules requiring tight voltage regulation and fast transient response. IC Role / Device Role / Timing Role: Dual-role FET used in both high-side and low-side positions across interleaved phases. Use Value: SO-8 thermal design (RθJL = 20°C/W) sustains 13.3 A continuous current with <40°C rise on 2 oz copper, supporting dense memory DIMM layouts. | Use Scenario: High-density power stage on PCIe-based AI accelerator cards with strict thermal envelope limits. IC Role / Device Role / Timing Role: Low-inductance, low-RDS(on) switch in 3+1 phase topology powering ASIC cores at 0.75–0.85 V. Use Value: Dual-source pins (pins 7 & 8) and exposed drain pad reduce parasitic inductance and improve thermal transfer, enabling stable 100 A peak operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | RDS(on) = 3.5 mΩ @ 4.5 V; QG = 52 nC; higher current (18.5 A), larger die size | Better conduction loss but higher switching loss; requires stronger gate driver | Preferred when thermal margin is limited and gate drive capability supports higher QG |
| SiR872DP-T1-GE3 | RDS(on) = 6.0 mΩ @ 4.5 V; QG = 32 nC; trench MOSFET with lower Crss (85 pF) | Lower switching loss and improved Cdv/dt immunity; different SO-8 footprint (no exposed drain) | Selected when layout allows non-exposed-drain package and ultra-low Qsw is prioritized over RDS(on) |
Compared with IRF7809AV, IRF7832TRPBF trades higher gate charge for lower RDS(on), favoring thermally constrained but driver-capable designs; SiR872DP-T1-GE3 offers lower Qsw and Crss but lacks the exposed drain thermal path, shifting thermal management burden to PCB copper.
Availability
IRF7809AV is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power modules, server memory regulators, and AI accelerator board power stages requiring stable component supply and proven thermal performance in SO-8 form factor.
Supply support for IRF7809AV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7809AV belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and data center power applications.
FAQ
What is the maximum continuous drain current for IRF7809AV at 100°C case temperature?
The IRF7809AV supports 14.6 A continuous drain current at TL = 90°C (lead temperature), per datasheet absolute maximum ratings. At 100°C case temperature, derating applies: based on RθJA = 50°C/W and TJ(max) = 150°C, usable ID drops to approximately 10.5 A with 1-inch² copper cooling.
Does IRF7809AV require a gate resistor for stability in synchronous buck applications?
Yes-a gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. The device's specified RG = 1.5–3.0 Ω is internal; external series resistance controls dV/dt and prevents shoot-through during paralleling or high-speed switching.
Can IRF7809AV be used in avalanche-rated circuits?
No. The IRF7809AV is not rated for repetitive avalanche operation. Its datasheet specifies only unclamped inductive switching (UIS) energy (EAS = 6.7 mJ at ID = 6.7 A), intended for single-pulse fault tolerance-not sustained avalanche mode. Designers must ensure operating conditions stay within SOA limits.
How does the SO-8 package of IRF7809AV differ from standard SO-8 in thermal performance?
The IRF7809AV uses a modified SO-8 with exposed drain terminals on pins 1–4 and 6–8, plus an internal thermal pad connected to the die drain. This structure achieves RθJL = 20°C/W (junction-to-lead), significantly better than standard SO-8 (typically >60°C/W), enabling 3.0 W power dissipation at TL = 90°C with proper PCB copper area.
IRF7809AV Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3780 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7809AV FAQ
1.How can I place an order for IRF7809AV through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7809AV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7809AV reliable?
The price and inventory of IRF7809AV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7809AV is usually 5 days.
3.What payment methods are accepted for IRF7809AV?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7809AV transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7809AV?
IRF7809AV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7809AV order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7809AV?
For technical support, including IRF7809AV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7809AV requirements.
6.How does Aetrix verify that IRF7809AV is sourced from the original manufacturer or authorized distributors?
All IRF7809AV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7809AV meets industry standards.
7.What is the process for return or replacement of IRF7809AV?
All IRF7809AV units undergo pre-shipment inspection (PSI). If there is an issue with IRF7809AV, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7809AV part is unused and in its original packaging.
Return procedure for IRF7809AV:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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