Infineon Technologies IRF7809AVTRPBF

Overview

IRF7809AVTRPBF from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for synchronous buck converter high-side and low-side switching in CPU core power delivery. It features 7.0 mΩ R_DS(on) at V_GS = 4.5 V, 41 nC total gate charge, 13.3 A continuous drain current (T_A = 25°C), and SO-8 package with enhanced C_dv/dt immunity-enabling high-efficiency, high-density DC-DC conversion for modern microprocessors.

For engineers reviewing the IRF7809AVTRPBF datasheet, IRF7809AVTRPBF pinout, IRF7809AVTRPBF application, or IRF7809AVTRPBF equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, Q_G/Q_GD ratio for switching loss trade-offs, body diode recovery (Q_rr = 120 nC), thermal resistance (R_θJA = 50°C/W), and SO-8 PCB thermal performance under >2 W dissipation.

Technical Context

This device implements HEXFET® Power MOSFET architecture with trench-gate process to minimize conduction and switching losses simultaneously. Its low 7.0 mΩ R_DS(on) at 4.5 V gate drive enables efficient operation with standard 5 V or 3.3 V controller outputs, while its 12 nC gate-to-drain charge (Q_GD) and 14 nC switching charge (Q_sw) support high-frequency (>500 kHz) synchronous rectification.

The MOSFET is characterized for robust C_dv/dt-induced turn-on immunity-critical for low-side FETs in fast-switching buck stages-and includes 100% R_G testing. Its body diode exhibits 1.3 V forward voltage at 15 A and 120 nC reverse recovery charge under 700 A/µs di/dt, enabling reliable freewheeling without external Schottky parallel devices in many designs.

Key Specifications

Pinout & Package

IRF7809AVTRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), optimized for vapor-phase, infrared, convection, and wave soldering. The package provides dual-source/drain paralleling capability via shared leads and supports >2 W power dissipation on typical PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRF7809AVTRPBF, IRF7832TRPBF trades higher gate charge for lower on-resistance-favoring conduction-limited designs-while Si7850DP-T1-GE3 reduces Q_G and Q_sw at the cost of slightly wider V_GS(th) tolerance, making it more sensitive to gate drive noise in noisy environments.

Availability

IRF7809AVTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and enterprise-grade deployments.

Supply support for IRF7809AVTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF7809AVTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and data center power applications where low R_DS(on), controlled gate charge, and robust C_dv/dt immunity are critical.

FAQ

What is the maximum continuous drain current for IRF7809AVTRPBF at 90°C case temperature?

The maximum continuous drain current is 14.6 A at T_L = 90°C, measured under conditions of V_GS ≥ 4.5 V and mounted on a standard PCB with adequate copper area. This rating assumes junction temperature remains ≤150°C and accounts for reduced thermal resistance at elevated case temperatures.

Does IRF7809AVTRPBF require a gate resistor for stable operation in synchronous buck converters?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 1.5–3.0 Ω intrinsic gate resistance. While not strictly required for basic turn-on/turn-off, omitting it risks overshoot, false triggering, or EMI in high-di/dt applications above 300 kHz.

Can IRF7809AVTRPBF be used as a high-side switch with 12 V input and 5 V gate drive?

Yes-it is fully specified for V_GS = 4.5 V operation, delivering 7.0 mΩ R_DS(on) at that drive level. With 5 V gate drive and 12 V drain, it sustains 13.3 A continuously at 25°C ambient, provided thermal design maintains T_J ≤ 150°C using the SO-8 package's 50°C/W R_θJA.

How does the body diode performance of IRF7809AVTRPBF compare to discrete Schottky diodes in synchronous rectification?

Its body diode has V_SD = 1.3 V at 15 A and Q_rr = 120 nC, which is less efficient than a 0.45 V Schottky but avoids external component count and layout complexity. In practice, it enables acceptable efficiency in mid-power buck converters where synchronous FET conduction dominates, eliminating need for parallel Schottky in most CPU VRM designs.