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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7809PBF

Name: IRF7809PBF
Brand: Infineon Technologies
SKU: IRF7809PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7809PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7809PBF.pdf

Description:: MOSFET N-CH 28V 14.5A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,935

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Product details

Overview

IRF7809PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 80 V V_DS, 75 A continuous drain current at T_C = 25°C, and 11.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7809PBF datasheet, IRF7809PBF pinout, IRF7809PBF application, or IRF7809PBF equivalent, key selection criteria include its low conduction loss at 10 V gate drive, rugged avalanche rating (E_AS = 420 mJ), and thermal performance in high-current switching topologies requiring stable R_DS(on) over temperature.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low specific on-resistance while maintaining robust short-circuit withstand time (≥10 µs at 40 V V_DS). Its body diode exhibits Q_rr = 120 nC and t_rr = 55 ns under I_F = 37.5 A, enabling efficient synchronous rectification in buck converters.

The device features a fully isolated TO-247 package with electrically insulated tab, supporting direct heatsink mounting without insulating pads. Gate threshold voltage is specified between 2.0 V and 4.0 V, ensuring reliable turn-on with standard 5 V or 3.3 V logic-level controllers when used with appropriate gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with 20% margin.
I_D (continuous)	75 A @ T_C = 25°C - Sustains high pulsed load currents in motor phase switches and SMPS primary-side switches.
R_DS(on) (typ)	11.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 30 A, reducing heatsink requirements.
Q_g	95 nC - Determines gate driver power and switching speed; compatible with common 2 A peak drivers.
E_AS	420 mJ - Confirmed single-pulse avalanche energy; supports inductive load switching without snubbers.
t_sc	≥10 µs @ V_DS = 40 V - Allows safe operation during fault conditions in motor control ICs with cycle-by-cycle protection.

Pinout & Package

IRF7809PBF uses a 3-pin TO-247 (TO-3P) package with electrically isolated metal tab. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives voltage-controlled signal; requires 10 V for full enhancement; Miller plateau at ~3.5 V.
Drain (D)	High-side current path	Internally bonded to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source (S)	Reference node	Serves as return path for load current and gate drive loop; critical for minimizing switching noise coupling.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	11.5 mΩ enables <0.7 W conduction loss at 25 A, reducing thermal stress in compact power stages.
100% avalanche tested	Each unit validated to 420 mJ E_AS, eliminating need for external clamping in inductive switching.
Enhanced dv/dt capability	Rated for 4.5 V/ns - suppresses false triggering in high-noise motor drive environments.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1; no pre-bake required for surface mount assembly.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: High-power BLDC inverter stage driving 1–3 kW fans or pumps.

IC Role / Device Role / Timing Role: N-channel high-side and low-side switching element in 3-phase bridge configuration.

Use Value: Low R_DS(on) and fast body diode reduce conduction and commutation losses, improving efficiency by ≥1.2% vs. legacy 20 mΩ MOSFETs.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter.

IC Role / Device Role / Timing Role: Main power switch operating at 100–250 kHz with hard-switched ZVS transition.

Use Value: Confirmed 10 µs short-circuit withstand time allows safe operation during transient overloads without desaturation protection circuitry.

Automotive HVAC Blower

Server PSU ORing FET

Use Scenario: PWM-controlled blower motor in 24 V automotive HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current with 10–20 kHz PWM frequency.

Use Value: Avalanche-rated structure eliminates need for freewheeling diode clamp, simplifying PCB layout and reducing BOM count.

Use Scenario: Hot-swap ORing FET in redundant 12 V server power distribution.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for bidirectional current blocking and reverse current prevention.

Use Value: Low Q_g (95 nC) enables fast turn-off (<200 ns) to prevent reverse current propagation during supply failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ @ 10 V; higher Q_g = 120 nC; same 80 V rating	Better conduction loss but slower switching; requires stronger gate driver	Prefer when thermal budget dominates over switching loss, e.g., low-frequency motor drives.
IXTH75N10L2	100 V rating; R_DS(on) = 12.5 mΩ; lower E_AS = 280 mJ	Higher voltage margin but reduced avalanche robustness	Select only if system requires >80 V derating headroom and fault energy is actively limited.

Compared with STP80NF55-08 and IXTH75N10L2, IRF7809PBF offers optimal balance of low R_DS(on), moderate Q_g, and industry-leading E_AS, making it preferred for unclamped inductive switching in industrial and automotive power stages where reliability under fault is critical.

Availability

IRF7809PBF is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, automotive HVAC blowers, and server ORing applications requiring stable component supply across multi-year production cycles.

Supply support for IRF7809PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRF7809PBF belongs to Infineon's HEXFET Generation 3 power MOSFET product line, engineered for high-current, medium-voltage switching in industrial motor control and power conversion where ruggedness and repeatable parametric stability are essential.

FAQ

What is the maximum junction temperature for IRF7809PBF?

The absolute maximum junction temperature is 175°C. Derating begins at T_J > 125°C per the datasheet thermal resistance curve. At T_C = 100°C, the device supports 45 A continuous drain current with R_DS(on) increasing to 14.2 mΩ due to positive temperature coefficient.

Can IRF7809PBF be driven directly from a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is 2.0–4.0 V, and full enhancement requires ≥10 V. Driving from 3.3 V results in partial turn-on (R_DS(on) > 100 mΩ), causing excessive heating. A dedicated gate driver IC with bootstrap or isolated supply is mandatory for reliable operation.

Is the TO-247 tab of IRF7809PBF electrically isolated?

Yes - the TO-247 package features an electrically isolated metal tab bonded to the Drain. This allows direct mechanical attachment to a heatsink without requiring insulating pads or washers, provided the heatsink is not referenced to Source potential in the circuit.

Does IRF7809PBF have a specified gate charge profile?

Yes - total gate charge Q_g is 95 nC at V_GS = 10 V, with Q_gs = 22 nC and Q_gd = 45 nC. These values define the Miller plateau duration and driver sizing requirements; measured per JEDEC JESD24-11 standard using constant-current gate drive.

IRF7809PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 28 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7809PBF FAQ

1.How can I place an order for IRF7809PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7809PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7809PBF reliable?

The price and inventory of IRF7809PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7809PBF is usually 5 days.

3.What payment methods are accepted for IRF7809PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7809PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7809PBF?

IRF7809PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7809PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7809PBF?

For technical support, including IRF7809PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7809PBF requirements.

6.How does Aetrix verify that IRF7809PBF is sourced from the original manufacturer or authorized distributors?

All IRF7809PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7809PBF meets industry standards.

7.What is the process for return or replacement of IRF7809PBF?

All IRF7809PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7809PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7809PBF part is unused and in its original packaging.

Return procedure for IRF7809PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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