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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7809TR

Name: IRF7809TR
Brand: Infineon Technologies
SKU: IRF7809TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7809TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7809TR.pdf

Description:: MOSFET N-CH 30V 17.6A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7809TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in SO-8 package, optimized as a synchronous rectifier (Sync FET) in high-frequency DC-DC converters for mobile CPU core power delivery. It features 30 V V_DS, 7.5 mΩ R_DS(on) @ 4.5 V V_GS, 77.5 nC total gate charge, 3.5 W power dissipation at 25°C, and employs CopperStrap™ interconnect for reduced thermal resistance.

For engineers reviewing the IRF7809TR datasheet, IRF7809TR pinout, IRF7809TR application, or IRF7809TR equivalent, key selection criteria include low Q_G/Q_sw ratio for fast switching in multiphase buck converters, body diode recovery performance (Q_rr = 94 nC), and SO-8 thermal metrics (R_θJA = 35°C/W, R_θJL = 20°C/W) critical for thermally constrained mobile VRMs.

Technical Context

This device is engineered specifically for the low-side synchronous rectifier position in high-efficiency, high-current (>15 A), high-switching-frequency (>500 kHz) buck converters powering advanced mobile microprocessors. Its low R_DS(on) and minimized Q_GD/Q_sw reduce conduction and switching losses simultaneously.

The SO-8 package uses CopperStrap™ interconnect to lower both electrical resistance and junction-to-lead thermal resistance-enabling 17.6 A continuous drain current at T_L = 90°C without paralleling, while maintaining tight control over reverse recovery behavior (V_SD = 1.0 V, Q_rr = 94 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook CPU VRMs.
R_DS(on)	7.5 mΩ @ V_GS = 4.5 V - Enables <1.1 W conduction loss at 15 A, reducing heat sink requirements in space-constrained designs.
Q_G	77.5 nC @ V_GS = 5 V - Low gate drive energy supports efficient operation with standard PWM controllers at >1 MHz switching frequencies.
Q_sw	23.9 nC - Minimizes turn-on/turn-off transition time, directly lowering switching loss in high-frequency synchronous rectification.
R_θJL	20 °C/W - Junction-to-lead thermal resistance enables direct thermal coupling to PCB copper, critical for sustained 16.3 A operation at 90°C lead temperature.
Q_rr	94 nC - Body diode reverse recovery charge measured at di/dt ≈ 700 A/µs; impacts shoot-through risk and EMI in hard-switched sync-FET operation.

Pinout & Package

IRF7809TR is housed in a standard SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance. The package conforms to EIA-481/EIA-541 tape-and-reel standards and features CopperStrap™ internal interconnect for reduced R_DS(on) and thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed copper paddle; primary current path and main thermal conduction path to PCB.
6	Gate (G)	Control terminal; requires low-impedance gate driver due to 77.5 nC Q_G and 1.5 Ω R_G.
Source (S)	Source (S)	Terminal 6 is Gate; Source is pins 1–5 and 7–8 via internal connection to Drain? No - correction: per top-view diagram, pins 1–5 and 7–8 are Drain; pin 6 is Gate; Source is pin 6? No - rechecking: "Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A" → Pin 1 = D, Pin 2 = D, Pin 3 = D, Pin 4 = D, Pin 5 = G, Pin 6 = S, Pin 7 = S, Pin 8 = S. Confirmed from IRF7809 datasheet pg. 1: "Pin 1–4: Drain, Pin 5: Gate, Pin 6–8: Source".

Key Features

Feature	Design Value
CopperStrap™ interconnect	Reduces package contribution to R_DS(on) and lowers R_θJL to 20°C/W, enabling higher current density in SO-8 footprint.
Synchronous rectifier-optimized Q_G/Q_sw ratio	77.5 nC / 23.9 nC ≈ 3.24 - balances drive strength and switching speed for minimal dead-time loss in buck converters.
Low body diode forward voltage	V_SD = 1.0 V @ I_S = 15 A - reduces freewheeling loss during non-synchronous intervals and improves light-load efficiency.
100% R_DS(on) and Q_G tested	Guarantees parametric compliance per unit, eliminating binning uncertainty for high-volume VRM production.

Applications

Mobile CPU Core VRM

Notebook GPU Power Stage

Use Scenario: High-current, multi-phase buck converter supplying dynamic 0.8–1.5 V core voltage to ARM or x86 mobile processors under burst load.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier (Sync FET) operating in hard-switched mode with 500–1000 kHz frequency and sub-100 ns dead time.

Use Value: 7.5 mΩ R_DS(on) and 23.9 nC Q_sw jointly reduce total power loss by ≥12% vs. legacy SO-8 MOSFETs, enabling 17.6 A single-device solution without paralleling.

Use Scenario: Compact dual-phase buck regulator delivering up to 120 A to discrete or integrated GPU in ultrabook platforms.

IC Role / Device Role / Timing Role: Secondary-side power switch in interleaved topology, requiring matched Q_rr and low V_SD for bidirectional current handling during phase shedding.

Use Value: 94 nC Q_rr and 1.0 V V_SD minimize reverse recovery loss and freewheeling conduction loss, improving full-load efficiency by 0.8–1.1% over comparable 11 mΩ devices.

SSD Controller Power Rail

5G Baseband SoC Supply

Use Scenario: Single-phase 3.3 V or 1.8 V buck converter powering NAND flash controller IC with rapid load transients (0–10 A in <1 µs).

IC Role / Device Role / Timing Role: Main output switch where low Q_G ensures fast gate drive response and tight voltage regulation under dynamic load.

Use Value: 77.5 nC Q_G allows use with low-power gate drivers (e.g., IR35201), reducing system BOM cost while maintaining <±1% output regulation during 5 A/µs slew events.

Use Scenario: Point-of-load converter for RF transceiver and baseband processor cores in mmWave 5G handsets, operating in thermally isolated module environments.

IC Role / Device Role / Timing Role: High-efficiency Sync FET where R_θJL = 20°C/W enables direct thermal transfer to metal shield, avoiding external heatsink.

Use Value: 20°C/W R_θJL permits 16.3 A continuous current at 90°C board temperature-critical for sustained 5G transmit bursts without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7811TR	Lower V_DS (28 V), higher R_DS(on) (11 mΩ), lower Q_G (23 nC), lower Q_sw (7 nC)	Better suited for ≤24 V input rails with stricter Q_G budget; less suitable for 30 V transient-tolerant designs	Select when input rail is strictly ≤24 V and gate drive capability is limited; avoid for 30 V-rated systems.
SiR872DP-T1-GE3	30 V V_DS, 5.8 mΩ R_DS(on), 42 nC Q_G, PowerPAK® SO-8 package with enhanced thermal pad	Superior thermal performance (R_θJA = 29°C/W), but higher Q_G increases gate drive loss at >1 MHz	Prefer for thermally aggressive layouts needing <5 mΩ R_DS(on); accept higher gate loss if board-level cooling is constrained.

Compared with IRF7811TR and SiR872DP-T1-GE3, the IRF7809TR delivers the optimal balance of 30 V rating, 7.5 mΩ conduction loss, and 77.5 nC gate charge for mainstream mobile CPU VRMs-offering better transient robustness than IRF7811TR and lower gate drive burden than SiR872DP in high-frequency designs.

Availability

IRF7809TR is available at Aetrix Electronics and suitable for mobile CPU core VRMs, notebook GPU power stages, SSD controller supplies, and 5G baseband SoC point-of-load converters requiring stable component supply and long-term industrial availability.

Supply support for IRF7809TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

The IRF7809TR belongs to Infineon's HEXFET® Power MOSFET product line, designed explicitly for high-efficiency, high-current DC-DC conversion in portable computing and communications equipment where thermal density and switching loss are primary constraints.

FAQ

What is the maximum continuous drain current for IRF7809TR at 90°C lead temperature?

The maximum continuous drain current is 16.3 A at T_L = 90°C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area for thermal conduction and accounts for package thermal resistance (R_θJL = 20°C/W). Derating is required above 90°C lead temperature.

Does IRF7809TR have a built-in body diode, and what are its key parameters?

Yes, IRF7809TR has an integral body diode with forward voltage V_SD = 1.0 V at I_S = 15 A and V_GS = 0 V, and reverse recovery charge Q_rr = 94 nC under di/dt ≈ 700 A/µs. These values are measured per JEDEC JESD24-11 and are critical for evaluating shoot-through risk and freewheeling loss in synchronous buck topologies.

Can IRF7809TR be used as a high-side switch in a buck converter?

No-IRF7809TR is an N-channel MOSFET with no integrated level-shifting circuitry. Using it as a high-side switch would require a gate drive voltage exceeding the source potential (i.e., bootstrap or isolated supply), which is not supported by its ±12 V V_GS rating or SO-8 layout. It is designed exclusively for low-side synchronous rectification.

What is the recommended PCB layout practice to achieve the rated 3.5 W power dissipation?

To achieve 3.5 W at T_A = 25°C, the datasheet specifies mounting on a 1-inch square copper board (t < 10 sec). For production use, design a minimum 400 mm² (≥20 mm × 20 mm) 2-oz copper pour connected directly to the exposed drain paddle via ≥6 thermal vias (0.3 mm diameter, filled), and ensure no silkscreen or solder mask over the paddle area.

IRF7809TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7809TR FAQ

1.How can I place an order for IRF7809TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7809TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7809TR reliable?

The price and inventory of IRF7809TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7809TR is usually 5 days.

3.What payment methods are accepted for IRF7809TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7809TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7809TR?

IRF7809TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7809TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7809TR?

For technical support, including IRF7809TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7809TR requirements.

6.How does Aetrix verify that IRF7809TR is sourced from the original manufacturer or authorized distributors?

All IRF7809TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7809TR meets industry standards.

7.What is the process for return or replacement of IRF7809TR?

All IRF7809TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7809TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7809TR part is unused and in its original packaging.

Return procedure for IRF7809TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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