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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7811APBF

Name: IRF7811APBF
Brand: Infineon Technologies
SKU: IRF7811APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7811APBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7811APBF.pdf

Description:: MOSFET N-CH 28V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,692

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Product details

Overview

IRF7811APBF from Infineon Technologies is a 28 V, 11 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 12 mΩ R_DS(on) at V_GS = 4.5 V, 17 nC total gate charge, and 960 pF output capacitance, enabling efficient operation in telecom and processor power supplies.

For engineers reviewing the IRF7811APBF datasheet, IRF7811APBF pinout, IRF7811APBF application, or IRF7811APBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance (0.9–3.7 Ω), fully characterized avalanche energy (58 mJ), body diode reverse recovery charge (93–150 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, designed for unclamped inductive switching and synchronous rectification. Its gate threshold voltage (1.0–3.0 V) and low ∆V_GS(th)/°C (−4.0 mV/°C) support stable turn-on across temperature, while 54 pF Crss enables fast, controlled dV/dt immunity.

The device is characterized for linear SOA operation up to 100 µs pulses and features 100% R_G tested gate resistance (0.9–3.7 Ω), ensuring consistent switching timing. Avalanche rating (E_AS = 58 mJ at I_AR = 9.0 A) and 150 °C max junction temperature support robust operation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	28 V - Maximum blocking voltage before avalanche onset; suitable for 24 V input rails with margin.
R_DS(on) @ 4.5 V	12 mΩ - Enables <1 W conduction loss at 9 A DC, critical for high-efficiency synchronous rectification.
Q_g	17 nC - Low total gate charge reduces drive power and enables high-frequency (>1 MHz) switching without excessive gate driver stress.
C_oss	960 pF - Output capacitance directly impacts turn-off loss and resonant behavior in synchronous buck phases.
t_r/t_f	4.1 ns / 6.5 ns - Fast edge rates minimize overlap loss during dead-time transitions in half-bridge configurations.
E_AS	58 mJ - Single-pulse avalanche energy rating supports reliability under transient overvoltage conditions in unclamped inductive loads.
Q_rr	93–150 nC - Reverse recovery charge of integrated body diode determines cross-conduction loss and EMI in synchronous rectifier mode.

Pinout & Package

IRF7811APBF is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal dissipation. The package complies with JEDEC MS-012AC and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Seven parallel drain terminals connected to internal die source metallization; primary current path for high-side or low-side switching.
8	Gate (G)	Single gate input; low gate resistance (0.9–3.7 Ω) minimizes ringing and improves dV/dt noise immunity.
Source (S)	Source (S)	Internally tied to pins 1–7 via substrate connection; external source bond wire connects to pin 8's adjacent pad (not labeled separately in SO-8 outline).

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	12 mΩ enables >95% efficiency in 12 V → 1.2 V VRMs with minimal heatsinking.
Fully characterized avalanche	58 mJ E_AS at 9.0 A verified per JEDEC JESD24-11, supporting ruggedness in non-isolated converters.
Low Q_gd/Q_gs1 ratio	Q_gd = 4.7 nC, Q_gs1 = 3.3 nC → ratio ≈ 1.42; suppresses C_dv/dt turn-on risk in high-dV/dt synchronous nodes.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); no pre-bake required for assembly.
Body diode t_rr	72–110 ns reverse recovery time ensures low shoot-through risk when paired with fast-control FETs.

Applications

Server VRM Synchronous Rectifier

Telecom DC-DC Isolated Converter

Use Scenario: 24 V input, 1.2 V/100 A output server voltage regulator module using multiphase buck topology.

IC Role / Device Role: Low-side synchronous rectifier FET replacing Schottky diode to reduce conduction loss and improve thermal headroom.

Use Value: 12 mΩ R_DS(on) at 4.5 V drive cuts rectifier loss by ~65% vs. typical 40 V Schottky, enabling higher power density and lower case temperature rise.

Use Scenario: 48 V to 12 V isolated forward converter in telecom power shelf with synchronous rectification on secondary side.

IC Role / Device Role: Secondary-side synchronous rectifier operating at 300–500 kHz switching frequency.

Use Value: 17 nC Q_g and 960 pF C_oss allow clean, low-loss switching at high frequency while maintaining ZVS capability under light load.

Industrial PLC Power Supply

Embedded CPU Core Voltage Regulator

Use Scenario: 24 V industrial input converted to 3.3 V/5 V for programmable logic controller I/O modules.

IC Role / Device Role: High-efficiency buck converter power stage FET with integrated body diode used in continuous conduction mode.

Use Value: Fully characterized avalanche rating (58 mJ) ensures reliable operation during inductive load transients and line surges common in factory environments.

Use Scenario: Point-of-load (POL) converter delivering 1.0–1.3 V at up to 30 A to modern ARM or x86 CPU cores.

IC Role / Device Role: Low-R_DS(on) synchronous rectifier in compact 3 × 3 mm² SO-8 footprint to fit tight board space constraints.

Use Value: SO-8 thermal resistance (R_θJA = 50 °C/W) combined with 12 mΩ R_DS(on) limits junction rise to <45 °C at full load, eliminating need for thermal vias or copper pours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 11.5 mΩ @ 4.5 V; Q_g = 21 nC; C_oss = 1020 pF; SO-8 package.	Slightly lower R_DS(on) but higher Q_g increases gate drive loss above 500 kHz.	Preferred where conduction loss dominates and switching frequency ≤ 300 kHz.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V only; requires ≥8 V gate drive; Q_g = 12 nC; SO-8 package.	Not rated for 4.5 V drive; unsuitable for 5 V logic-level control ICs.	Only viable with 10 V gate drivers; not drop-in compatible for 4.5 V systems.

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7811APBF offers optimal balance of 4.5 V drivability, low Q_g, and proven avalanche ruggedness-making it preferred for high-frequency synchronous rectification where gate drive voltage is constrained and reliability under transient stress is critical.

Availability

IRF7811APBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7811APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7811APBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in non-isolated and isolated DC-DC converters targeting computing and communications infrastructure.

FAQ

Is IRF7811APBF suitable for 5 V gate drive applications?

Yes. Its gate threshold voltage range (1.0–3.0 V) and guaranteed 12 mΩ R_DS(on) at V_GS = 4.5 V make it fully compatible with standard 5 V logic-level controllers. The device remains fully enhanced down to 4.5 V, with no derating required for typical buck converter gate drivers.

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70°C, the continuous drain current is 9.1 A with V_GS = 10 V, based on SO-8 package thermal limits and R_θJA = 50 °C/W. This assumes adequate PCB copper area (≥1 in² 2 oz Cu) and still-air conditions per JEDEC 51-7.

Does IRF7811APBF have an integrated body diode, and is it optimized for synchronous rectification?

Yes. It integrates a fast, low-Q_rr (93–150 nC) body diode with 72–110 ns reverse recovery time. The diode is explicitly characterized for synchronous rectifier use in high-frequency buck and forward converters, and its parameters are validated per JEDEC standards.

Can IRF7811APBF be used in avalanche mode for protection?

Yes. It is 100% R_G tested and fully characterized for single-pulse avalanche with E_AS = 58 mJ at I_AR = 9.0 A. This rating applies to unclamped inductive switching events and supports design margin in non-isolated converters where snubbers are omitted.

IRF7811APBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 28 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1760 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7811APBF FAQ

1.How can I place an order for IRF7811APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7811APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7811APBF reliable?

The price and inventory of IRF7811APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811APBF is usually 5 days.

3.What payment methods are accepted for IRF7811APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7811APBF?

IRF7811APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7811APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7811APBF?

For technical support, including IRF7811APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811APBF requirements.

6.How does Aetrix verify that IRF7811APBF is sourced from the original manufacturer or authorized distributors?

All IRF7811APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811APBF meets industry standards.

7.What is the process for return or replacement of IRF7811APBF?

All IRF7811APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7811APBF part is unused and in its original packaging.

Return procedure for IRF7811APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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