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Infineon Technologies IRF7811ATRPBF
- Part No.:
- IRF7811ATRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7811ATRPBF.pdf
- Description:
- MOSFET N-CH 28V 11A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,374
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Product details
Overview
IRF7811ATRPBF from Infineon Technologies is a 28 V, 11 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, featuring 12 mΩ RDS(on) at VGS = 4.5 V, 17 nC total gate charge, and fully characterized avalanche capability. It serves as a high-frequency synchronous rectifier or control FET in buck converters for CPU power delivery and telecom DC-DC systems.
For engineers reviewing the IRF7811ATRPBF datasheet, IRF7811ATRPBF pinout, IRF7811ATRPBF application, or IRF7811ATRPBF equivalent, key selection criteria include low 4.5 V drive capability, ultra-low gate impedance (0.9–3.7 Ω), tight RDS(on) temperature stability, body diode reverse recovery performance (Qrr = 93–150 nC), and SO-8 thermal resistance (RθJA = 50 °C/W).
Technical Context
This MOSFET employs planar silicon HEXFET architecture optimized for high-frequency switching in synchronous rectification topologies. Its gate threshold voltage (1.0–3.0 V) and low Qgd/Qgs1 ratio minimize Cdv/dt turn-on risk in noisy switching-node environments.
The device is fully characterized for unclamped inductive switching (EAS = 58 mJ), supports 100% RG testing, and delivers stable on-resistance across –55 to +150 °C junction range with 0.025 V/°C BVDSS tempco.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 28 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom/industrial DC-DC |
| RDS(on) @ 4.5 V | 12 mΩ - Enables <1 W conduction loss at 9 A RMS in compact SO-8 footprint |
| Qg | 17 nC - Low gate drive energy reduces controller loading and enables efficient 1–2 MHz operation |
| Qrr | 93–150 nC - Quantified reverse recovery charge critical for minimizing cross-conduction loss in synchronous buck |
| RθJA | 50 °C/W - Thermal resistance defines maximum ambient temperature for 11 A continuous operation without heatsink |
| ID @ 70°C | 9.1 A - Derated continuous current rating reflecting real-world board-level thermal limits |
| EAS | 58 mJ - Single-pulse avalanche energy supporting robustness against inductive switching transients |
Pinout & Package
IRF7811ATRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–4 and 6–8 are drain terminals; Pin 5 is gate; Pins 2–3–4 are source (shared with drain leads per internal layout).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Seven parallel drain connections reduce package inductance and improve current sharing in high-di/dt applications |
| 5 | Gate (G) | Single gate terminal with low RG (0.9–3.7 Ω) minimizes gate oscillation and improves EMI behavior |
| 2, 3, 4 | Source (S) | Shared source pins provide low-inductance return path for body diode and channel current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 12 mΩ enables direct logic-level drive from 5 V or 3.3 V controllers without level-shifting |
| Fully characterized avalanche | 58 mJ EAS rating verified per JEDEC JESD24-1, supporting reliable operation under unclamped inductive loads |
| Low Qgd/Qgs1 ratio | Ratio minimized to suppress Cdv/dt induced turn-on in high dV/dt synchronous rectifier nodes |
| 100% RG tested | Every unit screened for gate resistance consistency, ensuring predictable drive timing and reduced shoot-through risk |
| Lead-free and RoHS compliant | Meets IPC/JEDEC J-STD-020 reflow profile for Pb-free assembly up to 260 °C peak |
Applications
| High-Frequency Synchronous Buck Converters | Isolated Telecom DC-DC Converters |
|---|---|
Use Scenario: Point-of-load (POL) regulator supplying core voltage to x86 or ARM processors in servers and workstations. IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1.5 MHz with precise dead-time control to prevent shoot-through. Use Value: 12 mΩ RDS(on) at 4.5 V reduces conduction loss by >30% vs. legacy 20 mΩ devices, improving full-load efficiency by ~1.2%. | Use Scenario: Secondary-side synchronous rectifier in 48 V input isolated forward or LLC converter for 5G base station power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier operating with zero-voltage switching (ZVS) edge detection and adaptive gate timing. Use Value: Low Qrr (93–150 nC) and fast trr (72–110 ns) minimize body diode conduction loss and associated heating during transition periods. |
| Industrial Motor Drive Half-Bridge Stages | Automotive ADAS Power Management |
Use Scenario: High-side/low-side switch pair in 24 V BLDC motor gate driver stage for HVAC blowers or pump controls. IC Role / Device Role / Timing Role: Low-side FET handling PWM commutation at ≤100 kHz with integrated freewheeling diode conduction. Use Value: Fully characterized avalanche withstand (58 mJ) ensures reliability during inductive kickback events without external snubbers. | Use Scenario: Power switch for radar module LDO pre-regulator or camera sensor bias supply in automotive ADAS ECUs. IC Role / Device Role / Timing Role: Load switch enabling/disabling 3.3 V or 5 V rail with controlled inrush and fault reporting via gate monitoring. Use Value: Tight VGS(th) distribution (1.0–3.0 V) and low leakage (<100 nA) support precise enable threshold and low standby current compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 11.5 mΩ @ 4.5 V; Qg = 19.5 nC; SO-8 with thermally enhanced pad | Slightly higher gate charge increases driver loss at >1 MHz; better thermal RθJA (40 °C/W) | Preferred for thermally constrained layouts where board-level cooling is limited |
| DMN3020LSD-13 | RDS(on) = 14.5 mΩ @ 4.5 V; Qg = 13.5 nC; dual-N in SO-8 | Lower Qg benefits light-load efficiency; higher RDS(on) raises conduction loss above 6 A | Optimal for space-constrained half-bridge designs needing matched dual FETs |
Compared with Si7852DP-T1-GE3 and DMN3020LSD-13, IRF7811ATRPBF offers the best balance of low RDS(on), moderate Qg, and proven avalanche ruggedness-making it ideal for high-reliability synchronous rectification where both efficiency and transient robustness are required.
Availability
IRF7811ATRPBF is available at Aetrix Electronics and suitable for high-frequency synchronous buck converters, isolated telecom DC-DC converters, and industrial motor drive half-bridge stages requiring stable component supply and long-term production continuity.
Supply support for IRF7811ATRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and manufacturing excellence.
The IRF7811ATRPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where low gate charge and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF7811ATRPBF supports 9.1 A continuous drain current at TA = 70°C with VGS = 10 V, based on its 50 °C/W junction-to-ambient thermal resistance and SO-8 package limitations. This rating assumes adequate PCB copper area (≥1 in² 2 oz Cu) and still-air conditions.
Does this MOSFET require a gate resistor for stability?
Yes-a 2.2–10 Ω gate resistor is recommended between driver output and pin 5 to dampen ringing caused by trace inductance and low gate impedance (0.9–3.7 Ω). This prevents false triggering and reduces EMI, especially in high dV/dt synchronous rectifier configurations.
Can IRF7811ATRPBF be used as a replacement for IRF7807TRPBF?
No-IRF7807TRPBF has VDSS = 30 V and RDS(on) = 14 mΩ @ 4.5 V, while IRF7811ATRPBF is rated at 28 V and 12 mΩ. Though similar in package and function, the lower breakdown voltage requires verification of system overvoltage margins before substitution.
What is the significance of the "100% RG tested" marking?
"100% RG tested" means each IRF7811ATRPBF unit undergoes inline gate resistance screening during final test. This ensures gate drive timing consistency, reduces variation in turn-on/turn-off delays, and lowers risk of shoot-through in tightly timed synchronous topologies.
IRF7811ATRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 28 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1760 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7811ATRPBF FAQ
1.How can I place an order for IRF7811ATRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7811ATRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7811ATRPBF reliable?
The price and inventory of IRF7811ATRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811ATRPBF is usually 5 days.
3.What payment methods are accepted for IRF7811ATRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811ATRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7811ATRPBF?
IRF7811ATRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7811ATRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7811ATRPBF?
For technical support, including IRF7811ATRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811ATRPBF requirements.
6.How does Aetrix verify that IRF7811ATRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7811ATRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811ATRPBF meets industry standards.
7.What is the process for return or replacement of IRF7811ATRPBF?
All IRF7811ATRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811ATRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7811ATRPBF part is unused and in its original packaging.
Return procedure for IRF7811ATRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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