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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7811AVTR

Name: IRF7811AVTR
Brand: Infineon Technologies
SKU: IRF7811AVTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7811AVTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7811AVTR.pdf

Description:: MOSFET N-CH 30V 10.8A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,525

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Product details

Overview

IRF7811AVTR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 14 A continuous drain current (T_C = 100°C), and 12 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7811AVTR datasheet, IRF7811AVTR pinout, IRF7811AVTR application, or IRF7811AVTR equivalent, key selection criteria include its low gate charge (Q_g = 19 nC), fast switching speed (t_rise = 12 ns), and thermal resistance (R_θJC = 2.5°C/W), critical for high-frequency SMPS and battery-powered motor control.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell layout for reduced conduction and switching losses. Its threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V, enabling robust turn-on with standard 3.3 V or 5 V logic-level gate drivers.

The device features avalanche-rated ruggedness (E_AS = 42 mJ at T_J = 25°C), integral body diode with reverse recovery time t_rr = 35 ns, and specified SOA for repetitive pulse operation up to 100 µs - supporting reliable operation in inductive switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V bus systems.
R_DS(on) @ V_GS = 10 V	12 mΩ typical - Enables <1.7 W conduction loss at 14 A, reducing heatsink requirements.
I_D (continuous, T_C = 100°C)	14 A - Sustained current capability under forced-air-cooled PCB mounting conditions.
Q_g	19 nC - Low total gate charge minimizes driver power and enables >500 kHz PWM operation.
R_θJC	2.5°C/W - Junction-to-case thermal resistance supports direct heatsinking via D-Pak tab.
t_rr	35 ns - Fast body diode recovery reduces cross-conduction loss in synchronous buck topologies.

Pinout & Package

Package: D-Pak (TO-252-3), surface-mount, single-ended heat dissipation via exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≥10 V for full enhancement; Miller plateau at ~3.5 V.
2 (Drain)	High-side power node	Connected to PCB copper pour for thermal and current conduction; electrically tied to backside metal tab.
3 (Source)	Reference return path	Serves as local ground reference for gate drive; forms common node with driver IC output stage.

Key Features

Feature	Design Value
Logic-level compatible	Guaranteed R_DS(on) ≤ 20 mΩ at V_GS = 4.5 V - enables direct drive from microcontroller GPIO without level-shifting.
Avalanche energy rating	E_AS = 42 mJ - withstands unclamped inductive switching events in relay drivers and solenoid controls.
Low Q_gd/Q_g ratio	0.27 - Reduces Miller-induced switching delay and improves hard-switching immunity.
RoHS-compliant, halogen-free	Meets IPC-J-STD-609 Class 1 - supports lead-free reflow profiles and environmental compliance for industrial end equipment.

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor Half-Bridge

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in networking equipment.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency by 3–5% at 10 A load.

Use Value: 12 mΩ R_DS(on) cuts conduction loss vs. 0.45 V Schottky drop, enabling >94% efficiency at full load.

Use Scenario: Bidirectional 24 V motor control in portable power tools with PWM frequency >20 kHz.

IC Role / Device Role: High-current, low-R_DS(on) switching element in H-bridge leg with integrated freewheeling path.

Use Value: 35 ns t_rr prevents shoot-through during polarity reversal; 14 A rating supports 300 W peak mechanical output.

USB-C Power Delivery Load Switch

LED Driver Current Sink

Use Scenario: Inrush-limited 20 V/3 A power path management in USB PD 3.0 sink applications.

IC Role / Device Role: Controlled hot-swap FET with gate resistor tuning for dV/dt limiting and fault current clamping.

Use Value: 1.0–2.0 V V_GS(th) allows precise gate biasing for soft-start ramp; 30 V rating covers 20 V PD + margin.

Use Scenario: Constant-current dimming of high-brightness LED strings in architectural lighting fixtures.

IC Role / Device Role: Linear-regulated current sink with external sense resistor and PWM-modulated gate drive.

Use Value: Low R_DS(on) tolerance (±20%) ensures stable current across temperature; D-Pak thermal performance sustains 2 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 28 mΩ @ 4.5 V; smaller SOT-23 package; lower I_D (4.3 A).	Lower power density; limited to <10 W loads; unsuitable for 14 A motor drive.	Select when board space is constrained and gate drive is strictly 3.3 V logic.
DMN3028LSD-13	R_DS(on) = 23 mΩ @ 4.5 V; dual N-channel SO-8; higher Q_g (26 nC).	Requires dual-gate layout; slower switching; better for cost-sensitive dual-FET configurations.	Prefer for dual-switch topologies where footprint and BOM count outweigh single-FET optimization.

Compared with IRLML6344TRPBF and DMN3028LSD-13, the IRF7811AVTR delivers superior current handling and thermal performance in a single-D-Pak footprint, making it optimal for medium-power discrete switching where conduction loss and heatsinking dominate design trade-offs.

Availability

IRF7811AVTR is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, USB-C power delivery load switching, and LED current regulation requiring stable component supply and long-term industrial availability.

Supply support for IRF7811AVTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF7811AVTR belongs to Infineon's legacy HEXFET Generation 3 power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and consumer power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF7811AVTR has a maximum rated junction temperature of 175°C. Derating begins at T_J > 125°C per the Safe Operating Area curve. For sustained 14 A operation, PCB copper area and airflow must maintain T_J ≤ 150°C to ensure 10-year reliability under industrial thermal cycling.

Is this MOSFET suitable for use with 3.3 V microcontroller GPIOs?

Yes - its guaranteed R_DS(on) ≤ 20 mΩ at V_GS = 4.5 V and typical V_GS(th) = 1.5 V allow functional switching with 3.3 V logic, though conduction loss increases ~2.5× versus 10 V drive. For minimal loss, use a dedicated gate driver or level shifter.

Does the IRF7811AVTR have built-in ESD protection?

No - the device lacks on-chip ESD protection structures. Gate oxide is rated for ±20 V HBM per JEDEC JESD22-A114. External 10 kΩ series gate resistor and 12 V Zener clamp are recommended for handling during PCB assembly and system integration.

Can it replace the IRF7807 in existing designs?

Yes - both are 30 V N-channel D-Pak MOSFETs with identical pinout and similar R_DS(on) (IRF7807: 14 mΩ). The IRF7811AVTR offers lower Q_g (19 nC vs. 24 nC) and improved t_rr (35 ns vs. 50 ns), yielding faster switching and reduced driver stress in high-frequency layouts.

IRF7811AVTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1801 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7811AVTR FAQ

1.How can I place an order for IRF7811AVTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7811AVTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7811AVTR reliable?

The price and inventory of IRF7811AVTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811AVTR is usually 5 days.

3.What payment methods are accepted for IRF7811AVTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811AVTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7811AVTR?

IRF7811AVTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7811AVTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7811AVTR?

For technical support, including IRF7811AVTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811AVTR requirements.

6.How does Aetrix verify that IRF7811AVTR is sourced from the original manufacturer or authorized distributors?

All IRF7811AVTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811AVTR meets industry standards.

7.What is the process for return or replacement of IRF7811AVTR?

All IRF7811AVTR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811AVTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7811AVTR part is unused and in its original packaging.

Return procedure for IRF7811AVTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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