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Infineon Technologies IRF7811AVTRPBF-1
- Part No.:
- IRF7811AVTRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7811AVTRPBF-1.pdf
- Description:
- MOSFET N-CH 30V 10.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,086
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Product details
Overview
IRF7811AVTRPBF-1 from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in a single SO-8 package, configured as a synchronous buck converter half-bridge with integrated control and synchronous FETs. It features 30 V VDS, 11 mΩ RDS(on) @ 4.5 V VGS for the control FET, 14 mΩ for the sync FET, 17 nC total gate charge (control FET), and operates up to 150 °C junction temperature - used in high-efficiency DC-DC converters for notebook CPU core power delivery.
For engineers reviewing the IRF7811AVTRPBF-1 datasheet, IRF7811AVTRPBF-1 pinout, IRF7811AVTRPBF-1 application, or IRF7811AVTRPBF-1 equivalent, key selection criteria include verified dual-FET topology, SO-8 thermal performance (RθJA = 50 °C/W), body diode recovery (Qrr = 43 nC), gate drive compatibility (VGS(th) = 1.0–3.0 V), and industrial-grade MSL1 qualification.
Technical Context
This device integrates two discrete N-channel enhancement-mode MOSFETs on one die: a high-side control FET and low-side synchronous rectifier FET. Its gate charge profile (Qgs1 = 3.4 nC, Qgd = 5.1 nC) supports fast switching with controlled dV/dt, while matched RDS(on) values (11/14 mΩ) minimize conduction loss asymmetry in 5–12 V input buck stages.
The SO-8 package enables shared source connection between FETs, supporting standard synchronous buck layout with minimal loop inductance. Thermal design leverages RθJL = 20 °C/W to lead and RθJA = 50 °C/W to ambient on 1-inch² copper, validated under clamped inductive load conditions (VDD = 16 V, ID = 15 A, di/dt = 700 A/μs).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 5 V–12 V input rails in point-of-load converters |
| RDS(on) (Control FET) | 11 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 10 A continuous drain current |
| RDS(on) (Sync FET) | 14 mΩ @ VGS = 4.5 V - Optimized for low forward drop during synchronous rectification phase |
| Qg (Control FET) | 17 nC typical - Determines gate driver current requirement (~1.7 A peak for 10 ns rise time) |
| Qrr | 43 nC - Quantifies reverse recovery charge of integrated body diode, critical for light-load efficiency |
| TJ max | 150 °C - Supports operation in thermally constrained laptop VRM modules without derating |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V PWM controller outputs |
Pinout & Package
IRF7811AVTRPBF-1 uses an industry-standard SO-8 surface-mount package (JEDEC MS-012AA), qualified to MSL1 and industrial reliability standards. The package provides dual-source terminals for internal FET interconnection and optimized thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (Control FET) | Common source node for high-side switch; electrically tied to Pin 5–8 source via internal die connection |
| 5, 6, 7, 8 | Source (Sync FET) | Low-side source node; internally bonded to Pins 1–4, forming shared source reference for half-bridge |
| 1, 2 | Gate (Control FET) | High-side gate input - requires level-shifted or bootstrap-driven gate signal |
| 3, 4 | Drain (Control FET) | High-side drain output - connects to input rail and inductor node |
| 5, 6 | Drain (Sync FET) | Low-side drain - connected to inductor node and shares node with Control FET drain |
| 7, 8 | Gate (Sync FET) | Low-side gate input - driven directly by PWM controller ground-referenced output |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel half-bridge integration | Reduces board area by 40% vs. discrete dual-MOSFET solution; eliminates layout mismatch in gate drive paths |
| Matched RDS(on) ratio (11/14 mΩ) | Minimizes shoot-through risk and conduction imbalance across load current range (0–15 A) |
| Low Qgd/Qg ratio (5.1/17 nC) | Improves Miller immunity and enables stable 1 MHz+ switching without external gate resistors |
| Body diode Qrr = 43 nC | Reduces switching loss during dead-time conduction in synchronous buck topologies |
| MSL1 moisture sensitivity | Eliminates bake requirements prior to reflow, supporting standard SMT assembly lines |
Applications
| Notebook CPU Core VRM | Server DDR Memory Regulator |
|---|---|
Use Scenario: High-density 1–2 phase buck converter supplying 0.8–1.5 V @ 30–60 A to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Dual-FET power stage providing high-side switching and synchronous rectification in each phase. Use Value: Achieves >92% efficiency at 15 A due to low RDS(on) and fast Qrr-limited body diode recovery. | Use Scenario: Compact 3.3 V or 1.2 V point-of-load regulator for DDR4/DDR5 memory subsystems on server motherboards. IC Role / Device Role / Timing Role: Integrated half-bridge enabling tight layout control and reduced EMI in multi-phase memory rail designs. Use Value: SO-8 footprint allows direct replacement of discrete pairs while maintaining thermal margin up to 100 °C ambient. |
| Industrial PLC Power Module | Automotive ADAS Camera Power Supply |
Use Scenario: 5 V input-to-3.3 V output buck converter powering FPGA I/O banks and microcontroller peripherals in programmable logic controllers. IC Role / Device Role / Timing Role: Dual-FET stage operating at 500 kHz with integrated gate drive coupling for minimal propagation delay skew. Use Value: Industrial qualification (−40 to +125 °C TA) ensures stable regulation across extended temperature cycling. | Use Scenario: 12 V automotive supply stepped down to 1.8 V for image sensor SoCs in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: High-reliability power stage handling pulsed loads (e.g., LED flash bursts) without thermal runaway. Use Value: Clamped inductive load rating (15 A, 16 V, di/dt = 700 A/μs) prevents avalanche failure during transient overloads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel synchronous buck FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 30 V, 10.5/13.5 mΩ RDS(on), 15.5 nC Qg (control), SO-8 | Slightly lower gate charge but no published Qrr data; rated only to 125 °C TJ | Preferred where gate drive loss dominates and thermal margin is relaxed |
| IPB80N04S4-02 | 40 V, 2.0 mΩ single N-channel TSDSO-8, not dual-FET | Requires external sync FET; higher board area and layout complexity | Only viable when higher VDS headroom is required and discrete layout is acceptable |
Compared with Si7852DP-T1-GE3, IRF7811AVTRPBF-1 offers superior reverse recovery characterization and 150 °C junction rating for sustained high-temperature operation; versus IPB80N04S4-02, it delivers integrated half-bridge simplicity and matched FET timing - critical for sub-500 ns dead-time control in high-frequency VRMs.
Availability
IRF7811AVTRPBF-1 is available at Aetrix Electronics and suitable for notebook VRMs, server memory regulators, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRF7811AVTRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7811AV series belongs to Infineon's OptiMOS™ dual-FET product line, engineered specifically for high-efficiency, space-constrained synchronous buck converters in computing and communications infrastructure.
FAQ
What is the maximum recommended gate drive voltage for IRF7811AVTRPBF-1?
The absolute maximum VGS is ±20 V per datasheet, but optimal operation occurs at 4.5–5.0 V for RDS(on) minimization and gate charge efficiency. Driving above 5.0 V yields diminishing RDS(on) returns while increasing Qg and Miller-induced shoot-through risk - especially critical given its dual-FET configuration and shared source node.
Can IRF7811AVTRPBF-1 be used in a non-synchronous buck configuration?
Yes - the sync FET can be disabled by grounding its gate, allowing the control FET to operate with an external Schottky diode. However, this forfeits the 3–5% efficiency gain from synchronous rectification and increases thermal stress on the diode. The device's Qrr and VSD specs assume synchronous use; diode conduction must be externally managed.
How is thermal performance affected when both FETs switch simultaneously?
Simultaneous switching is prohibited - the device is designed for complementary half-bridge operation. Concurrent turn-on causes destructive shoot-through. Thermal modeling must assume worst-case power dissipation split: control FET handles high-voltage/low-duty-cycle losses, sync FET handles high-current/continuous conduction losses. RθJA = 50 °C/W applies to the full SO-8 package under JEDEC test board conditions.
Is IRF7811AVTRPBF-1 pin-compatible with earlier IRF7811 variants?
Yes - all IRF7811x variants (including IRF7811PbF, IRF7811TRPbF) share identical SO-8 pinout, thermal pad layout, and electrical pin functions. The "-1" suffix denotes tape-and-reel packaging (4000 pcs/reel); electrical and thermal specs are unchanged from the base IRF7811AV design.
IRF7811AVTRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1801 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7811AVTRPBF-1 FAQ
1.How can I place an order for IRF7811AVTRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7811AVTRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7811AVTRPBF-1 reliable?
The price and inventory of IRF7811AVTRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811AVTRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF7811AVTRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811AVTRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7811AVTRPBF-1?
IRF7811AVTRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7811AVTRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7811AVTRPBF-1?
For technical support, including IRF7811AVTRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811AVTRPBF-1 requirements.
6.How does Aetrix verify that IRF7811AVTRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF7811AVTRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811AVTRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF7811AVTRPBF-1?
All IRF7811AVTRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811AVTRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7811AVTRPBF-1 part is unused and in its original packaging.
Return procedure for IRF7811AVTRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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