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Infineon Technologies IRF7811TR
- Part No.:
- IRF7811TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7811TR.pdf
- Description:
- MOSFET N-CH 28V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,222
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Product details
Overview
IRF7811TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in SO-8 package, designed as a synchronous rectifier (Sync FET) in high-frequency DC-DC converters for mobile CPU core power delivery. It features 28 V VDS, 11 mΩ RDS(on) @ 4.5 VGS, 23 nC total gate charge, 7 nC switching charge, and 31 nC output charge - enabling high-efficiency, low-loss operation in compact point-of-load designs.
For engineers reviewing the IRF7811TR datasheet, IRF7811TR pinout, IRF7811TR application, or IRF7811TR equivalent, key selection criteria include its low Qsw/QG ratio for fast switching, optimized body diode recovery (Qrr = 82 nC), thermal resistance (RθJL = 20 °C/W), and SO-8 CopperStrap™ interconnect for reduced package resistance in high-current synchronous buck stages.
Technical Context
This device operates as the low-side synchronous rectifier in dual-MOSFET buck converter topologies, where precise gate drive timing and minimized reverse recovery losses are critical. Its 1.0 V gate threshold voltage and 2.5 A continuous body diode current support robust shoot-through immunity and controlled freewheeling conduction.
The SO-8 package uses CopperStrap™ interconnect to reduce both electrical resistance and thermal resistance between die and leadframe. Measured RθJL = 20 °C/W and RθJA = 35 °C/W (on 1"² copper board) enable sustained 13 A operation at TL = 90 °C without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 28 V - maximum blocking voltage for 20–25 V input rail applications with margin |
| RDS(on) | 11 mΩ @ VGS = 4.5 V - conduction loss of ~2.5 W at 15 A, enabling single-device use instead of paralleled FETs |
| QG | 23 nC @ VGS = 5 V - gate drive energy requirement compatible with standard PWM controllers driving 1–2 MHz switching |
| Qsw | 7 nC - low switching charge minimizes turn-on/turn-off transition losses in high-frequency operation |
| Qoss | 31 nC @ VDS = 16 V - output capacitance impacts zero-voltage switching (ZVS) capability and resonant tank design |
| RθJL | 20 °C/W - junction-to-lead thermal resistance enables direct thermal coupling to PCB copper pour for passive cooling |
| ID (TL = 90°C) | 13 A - sustainable continuous current under typical VRM heatsink conditions without derating |
Pinout & Package
IRF7811TR is housed in a standard SO-8 surface-mount package with exposed drain paddle (pin 1–4 and 6–8 connected to drain), optimized via CopperStrap™ interconnect for enhanced thermal and electrical performance. The package complies with EIA-481/EIA-541 tape-and-reel standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | High-current power path; all pins electrically tied to internal drain metallization and exposed paddle |
| 5 | Gate (G) | Control terminal; requires < ±12 V rating and low-impedance drive to achieve specified QG-based switching speed |
| - (exposed pad) | Drain (D) | Primary thermal path to PCB; must be soldered to large copper area for RθJA = 35 °C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| CopperStrap™ interconnect | Reduces package resistance by >40% vs. standard SO-8, lowering conduction loss and improving thermal transfer to PCB |
| Low Qsw/QG ratio (7/23 ≈ 0.3) | Enables faster switching with lower gate driver power consumption and reduced EMI generation |
| Optimized body diode Qrr = 82 nC | Minimizes reverse recovery loss and associated voltage spikes during synchronous rectification transitions |
| 1.0 V VGS(th) | Ensures reliable turn-on with 3.3 V or 5 V gate drivers while maintaining noise immunity against false triggering |
| SO-8 footprint compatibility | Enables drop-in replacement in existing layouts designed for industry-standard 8-pin power MOSFET packages |
Applications
| Mobile CPU Core VRM | GPU Power Delivery |
|---|---|
Use Scenario: Point-of-load DC-DC converter supplying 0.8–1.3 V at up to 40 A to ARM or x86 mobile processors in ultrabooks and tablets. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and improve efficiency. Use Value: Achieves >92% efficiency at 15 A load due to 11 mΩ RDS(on) and 7 nC Qsw, reducing thermal load on compact PCBs. | Use Scenario: Dual-phase buck regulator powering discrete or integrated GPU cores in portable gaming devices. IC Role / Device Role: Sync FET operating at 1–2 MHz with adaptive dead-time control to prevent shoot-through. Use Value: Qrr = 82 nC and fast tf = 8 ns minimize body diode conduction time and associated losses during phase interleaving. |
| SSD Controller Power | 5G Baseband PMIC |
Use Scenario: Single-phase 12 V input to 1.8 V output converter for NAND flash controller ICs in M.2 NVMe SSDs. IC Role / Device Role: High-efficiency low-side switch managing transient current demands during burst read/write operations. Use Value: 13 A continuous rating at 90 °C case temperature supports sustained 20 A peak loads without thermal throttling. | Use Scenario: Compact multi-rail PMIC supplying core, I/O, and RF sections of 5G mmWave baseband SoCs. IC Role / Device Role: Secondary-stage sync FET delivering 1.0 V @ 8 A to digital signal processor blocks. Use Value: Low RθJL = 20 °C/W allows direct thermal coupling to ground plane, eliminating need for thermal vias in space-constrained modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 9.5 mΩ @ 4.5 VGS; QG = 27 nC; SO-8 with enhanced thermal pad | Lower conduction loss but higher gate charge increases driver loss at >1.5 MHz | Preferred for <1.2 MHz designs prioritizing efficiency over switching speed |
| IPB80N04S4-03 | TO-263 package; RDS(on) = 3.0 mΩ @ 10 VGS; QG = 72 nC; not logic-level | Requires 10 V gate drive; superior thermal performance but incompatible with 3.3 V control rails | Only suitable when gate driver supports ≥10 V and board space permits D2PAK footprint |
Compared with SiR872DP-T1-GE3 and IPB80N04S4-03, the IRF7811TR offers optimal balance of logic-level drive compatibility, low Qsw, and SO-8 thermal performance - making it uniquely suited for space- and efficiency-constrained mobile VRMs where gate drive voltage is limited to 3.3–5 V.
Availability
IRF7811TR is available at Aetrix Electronics and suitable for mobile CPU core VRMs, GPU power delivery systems, SSD controller supplies, and 5G baseband PMICs requiring stable component supply across extended production lifecycles.
Supply support for IRF7811TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.
The HEXFET® product line - including the IRF7811TR - was engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure, emphasizing low RDS(on), fast switching, and robust thermal packaging.
FAQ
What is the maximum recommended gate drive voltage for IRF7811TR?
The absolute maximum gate-source voltage is ±12 V per datasheet. For reliable long-term operation, gate drive should be limited to 4.5–5.0 V to fully exploit its logic-level characteristics while avoiding overstress of the gate oxide. Driving above 5.5 V yields diminishing RDS(on) improvement and increases risk of gate leakage degradation over time.
Can IRF7811TR be used as a high-side switch in a buck converter?
No - IRF7811TR is optimized as a low-side synchronous rectifier. Its 1.0 V gate threshold and low RDS(on) at 4.5 VGS make it unsuitable for high-side operation without a floating gate driver. High-side use would require ≥10 V gate drive relative to source, exceeding its logic-level design intent and risking insufficient VGS margin during transients.
How does the CopperStrap™ interconnect improve thermal performance?
CopperStrap™ replaces traditional aluminum bond wires with direct copper strap connections between die and leadframe. This reduces both electrical resistance (lowering I²R loss) and thermal resistance (RθJL = 20 °C/W vs. ~30 °C/W in standard SO-8), enabling more efficient heat transfer from junction to PCB copper pour without additional thermal vias.
Is IRF7811TR RoHS-compliant and halogen-free?
Yes - IRF7811TR is manufactured in compliance with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The SO-8 package uses matte tin lead finish and green molding compound, with full material declarations available in Infineon's official product change notices (PCNs) and substance compliance reports.
IRF7811TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 28 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7811TR FAQ
1.How can I place an order for IRF7811TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7811TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7811TR reliable?
The price and inventory of IRF7811TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811TR is usually 5 days.
3.What payment methods are accepted for IRF7811TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7811TR?
IRF7811TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7811TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7811TR?
For technical support, including IRF7811TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811TR requirements.
6.How does Aetrix verify that IRF7811TR is sourced from the original manufacturer or authorized distributors?
All IRF7811TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811TR meets industry standards.
7.What is the process for return or replacement of IRF7811TR?
All IRF7811TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7811TR part is unused and in its original packaging.
Return procedure for IRF7811TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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