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Infineon Technologies IRF7811WTR
- Part No.:
- IRF7811WTR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7811WTR.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,498
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Product details
Overview
IRF7811WTR from Infineon Technologies (formerly International Rectifier) is an N-channel HEXFET® Power MOSFET optimized for synchronous buck converters in CPU core power delivery. It features 9.0 mΩ RDS(on) at VGS = 4.5 V, 22 nC total gate charge, 14 A continuous drain current (TA = 25°C), and SO-8 package with exposed drain pads for thermal performance. Used in high-efficiency DC-DC converters powering modern microprocessors.
For engineers reviewing the IRF7811WTR datasheet, IRF7811WTR pinout, IRF7811WTR application, or IRF7811WTR equivalent, key selection criteria include RDS(on), QG, Cdv/dt immunity, body diode recovery (Qrr = 45 nC), and SO-8 thermal resistance (RθJA = 40°C/W).
Technical Context
This MOSFET employs advanced trench-gate HEXFET technology to minimize conduction and switching losses simultaneously. Its low 9.0 mΩ on-resistance at 4.5 V gate drive and 8.8 nC gate-to-drain charge (QGD) support fast, efficient switching in high-frequency synchronous rectification.
The device is characterized for critical synchronous FET parameters: high Cdv/dt immunity to prevent false turn-on, low reverse recovery charge (Qrr = 45 nC), and tightly specified gate threshold voltage (VGS(th) = 1.0 V min) enabling stable operation with low-voltage PWM controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V input rail applications with margin |
| RDS(on) | 9.0 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 15 A in CPU core rails |
| QG | 22 nC - Low gate drive power requirement for 300–1000 kHz switching |
| Qrr | 45 nC - Minimizes body diode switching loss and EMI in hard-switched sync-FET operation |
| RθJA | 40 °C/W - Supports 3.1 W dissipation on standard 1-inch² PCB copper area |
| ID (cont) | 14 A @ TA = 25°C - Rated for sustained current in compact VRM designs |
| VGS(th) | 1.0 V min - Ensures reliable turn-on with 3.3 V or 5 V gate drivers |
Pinout & Package
IRF7811WTR is housed in a standard SO-8 surface-mount package with exposed drain paddle (pin 1–4 and 6–8 are drain terminals; pin 5 is gate; pins 2–3–4 are source). The layout supports dual-side cooling and high-current routing in dense DC-DC layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Multiple parallel drain connections reduce package inductance and improve thermal spreading |
| 5 | Gate (G) | Single gate input with 2.0–4.0 Ω internal gate resistance for controlled turn-on/turn-off |
| 2, 3, 4 | Source (S) | Shared source terminals enable Kelvin sensing and low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for synchronous buck topologies | Low QGD/QG ratio (0.4) reduces Miller-induced switching delay and improves duty cycle fidelity |
| High Cdv/dt immunity | Validated against false turn-on under >10 V/ns transients typical in multiphase CPU VRMs |
| 100% RG tested | Guaranteed gate resistance of 2.0–4.0 Ω ensures consistent drive timing across production lots |
| Body diode with low Qrr | 45 nC reverse recovery charge enables efficient freewheeling without external Schottky |
Applications
| Server CPU Core VRM | Laptop Voltage Regulator Module |
|---|---|
Use Scenario: Multiphase synchronous buck converter delivering 1–2 V @ 50–150 A to Intel/AMD server CPUs. IC Role / Device Role / Timing Role: Synchronous FET (low-side switch) operating at 300–600 kHz with precise dead-time control. Use Value: 9.0 mΩ RDS(on) and 45 nC Qrr reduce conduction + switching losses by ~18% vs. legacy 12 mΩ parts. | Use Scenario: Compact 2–3 phase VRM on thin-and-light laptop motherboards with tight thermal constraints. IC Role / Device Role / Timing Role: High-side or low-side power switch in space-constrained, air-cooled DC-DC stage. Use Value: SO-8 package with exposed drain allows 3.1 W dissipation on minimal PCB copper, eliminating need for thermal vias. |
| Graphics Card GPU Power Stage | Industrial FPGA Core Supply |
Use Scenario: High-current, transient-responsive power stage for discrete GPU VRMs requiring rapid load-step response. IC Role / Device Role / Timing Role: Low-side FET in interleaved buck topology with 1 MHz+ switching frequency. Use Value: 22 nC QG and 11 ns rise time enable clean, low-loss switching up to 1.2 MHz without excessive gate driver heating. | Use Scenario: Reliable, long-lifecycle core supply for Xilinx/Intel industrial FPGAs operating in extended temperature environments. IC Role / Device Role / Timing Role: Primary switching element in isolated or non-isolated buck regulator with -40°C to +125°C ambient. Use Value: -55°C to +150°C junction rating and 150 µA IDSS at 100°C ensure stable operation over full industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | RDS(on) = 4.5 mΩ @ 4.5 V; QG = 33 nC; SO-8 | Lower RDS(on) but higher gate charge increases driver loss at >500 kHz | Prefer for lower conduction loss in <300 kHz, thermally limited designs |
| SiR872DP-T1-GE3 | RDS(on) = 7.0 mΩ @ 4.5 V; QG = 20 nC; PowerPAK® SO-8 | Enhanced thermal pad (RθJA = 35°C/W); same footprint, tighter QG tolerance | Prefer when board-level thermal resistance must be reduced below 40°C/W |
Compared with IRF7811WTR, IRF7832TRPBF trades higher switching loss for lower conduction loss, while SiR872DP-T1-GE3 delivers better thermal performance and tighter gate charge consistency-both require revalidation of gate drive strength and layout parasitics.
Availability
IRF7811WTR is available at Aetrix Electronics and suitable for server CPU VRMs, laptop voltage regulator modules, graphics card power stages, and industrial FPGA core supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF7811WTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7811WTR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.
FAQ
What is the maximum safe operating frequency for IRF7811WTR in a synchronous buck converter?
The IRF7811WTR supports reliable operation up to 1.2 MHz, validated by its 11 ns rise time, 9.9 ns fall time, and 10.1 nC switching charge. At frequencies above 800 kHz, gate drive strength and PCB layout parasitics become critical; thermal limits remain governed by RθJA = 40°C/W and 3.1 W power dissipation rating.
Does IRF7811WTR require a gate resistor for stability in high-speed switching?
Yes-a series gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's internal RG (2.0–4.0 Ω) provides baseline damping, but external tuning is required for optimal EMI and shoot-through immunity in multiphase VRMs.
Can IRF7811WTR replace IRF7807 in an existing design?
Yes, with validation: both are SO-8 N-channel MOSFETs, but IRF7811WTR offers 9.0 mΩ vs. IRF7807's 13 mΩ RDS(on) and lower QG (22 nC vs. 26 nC). Layout changes are unnecessary, but gate drive timing and thermal margin should be rechecked due to higher current density.
Is the body diode of IRF7811WTR suitable for asynchronous operation without external Schottky?
Yes-the body diode is characterized with 45 nC Qrr and 1.25 V VSD at 15 A, making it viable for low-duty-cycle freewheeling in asynchronous buck converters. However, for >200 kHz or high-efficiency designs, a parallel Schottky remains preferred to eliminate reverse recovery loss.
IRF7811WTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2335 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7811WTR FAQ
1.How can I place an order for IRF7811WTR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7811WTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7811WTR reliable?
The price and inventory of IRF7811WTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811WTR is usually 5 days.
3.What payment methods are accepted for IRF7811WTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811WTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7811WTR?
IRF7811WTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7811WTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7811WTR?
For technical support, including IRF7811WTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811WTR requirements.
6.How does Aetrix verify that IRF7811WTR is sourced from the original manufacturer or authorized distributors?
All IRF7811WTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811WTR meets industry standards.
7.What is the process for return or replacement of IRF7811WTR?
All IRF7811WTR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811WTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7811WTR part is unused and in its original packaging.
Return procedure for IRF7811WTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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