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Infineon Technologies IRF7811WTRPBF
- Part No.:
- IRF7811WTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7811WTRPBF.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,984
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Product details
Overview
IRF7811WTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel HEXFET® Power MOSFET in SO-8 package, optimized for synchronous buck converter low-side FET applications. It delivers 9.0 mΩ RDS(on) at VGS = 4.5 V, 22 nC total gate charge, and 109 A pulsed drain current - enabling high-efficiency CPU core power delivery in compact DC-DC converters.
For engineers reviewing the IRF7811WTRPBF datasheet, IRF7811WTRPBF pinout, IRF7811WTRPBF application, or IRF7811WTRPBF equivalent, key selection criteria include RDS(on) vs. gate drive voltage, Cdv/dt immunity for synchronous operation, thermal resistance (RθJA = 40 °C/W), and body diode recovery performance (Qrr = 45 nC).
Technical Context
This MOSFET employs trench-gated HEXFET technology to minimize conduction and switching losses simultaneously. Its low 9.0 mΩ on-resistance at 4.5 V gate drive and 8.8 nC gate-to-drain charge (QGD) support fast, low-loss switching in high-frequency synchronous buck topologies.
The device features enhanced Cdv/dt immunity to prevent false turn-on during high dV/dt transitions, validated by 100% RG testing and characterized with Qsw = 10.1 nC and Qoss = 12 nC at VDS = 16 V - critical for stable low-side FET operation in microprocessor VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters |
| RDS(on) | 9.0 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 15 A DC load, reducing thermal stress in dense PCB layouts |
| QG | 22 nC @ VGS = 5 V - Determines gate driver power requirement and switching speed in 300–1000 kHz buck converters |
| Qrr | 45 nC - Quantifies reverse recovery charge of integrated body diode, directly impacting shoot-through risk and efficiency in synchronous rectification |
| RθJA | 40 °C/W - Specifies junction-to-ambient thermal resistance on standard 1-inch² copper pad; enables ~3.1 W continuous dissipation at TA = 25 °C |
| ID | 14 A @ TA = 25 °C - Continuous DC current rating under natural convection, defining safe operating area for steady-state CPU core loads |
| VGS(th) | 1.0 V - Low threshold voltage ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance; compatible with vapor phase, infrared, convection, and wave soldering processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 | Drain (D) | Parallel-connected internal drain terminals tied to exposed paddle - primary current path and thermal conduction path to PCB |
| 4 | Gate (G) | Control terminal requiring ≤ ±12 V drive; low 2.0–4.0 Ω gate resistance supports clean edge rates |
| 8 | Source (S) | Reference node for gate drive and current sensing; connects to power ground plane in synchronous buck low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on)/QG ratio | 9.0 mΩ / 22 nC = 0.41 mΩ·nC - balances conduction and switching loss for >90% efficiency in 500 kHz+ CPU VRMs |
| Cdv/dt-induced turn-on immunity | Validated via layout-independent test - prevents spurious conduction during high dV/dt transitions across high-side switch |
| 100% RG tested | Ensures consistent gate drive timing and eliminates batch variation in switching behavior |
| Lead-free (RoHS-compliant) | Meets IPC-J-STD-020 moisture sensitivity level 1 - supports standard reflow profiles without pre-bake |
Applications
| Server CPU Core VRM | Laptop Voltage Regulator Module |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying dynamic 1–2 V/10–100 A loads to x86 or ARM processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET, switching at 300–1000 kHz with precise dead-time control. Use Value: 9.0 mΩ RDS(on) minimizes I²R loss under heavy load; 45 nC Qrr reduces body diode conduction time and associated power loss. | Use Scenario: Compact, thermally constrained single- or dual-phase VRM powering mobile SoCs in ultrabooks and thin clients. IC Role / Device Role / Timing Role: Low-side FET in space-limited synchronous buck stage, driven by integrated controller with 3.3 V gate output. Use Value: 1.0 V VGS(th) ensures full enhancement with 3.3 V logic; SO-8 footprint allows high-density layout while maintaining 3.1 W power handling. |
| GPU Power Delivery | ASIC Core Supply |
Use Scenario: Multi-rail, high-transient-current power system for discrete graphics processing units with rapid load steps up to 50 A/µs. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (≥600 kHz) buck converter, paired with high-side GaN or Si MOSFET. Use Value: 8.8 nC QGD enables fast, controlled turn-off to suppress shoot-through; 20 °C/W RθJL supports localized thermal management via PCB copper pour. | Use Scenario: Point-of-load regulator for AI accelerator or network processor cores demanding tight voltage regulation and low noise. IC Role / Device Role / Timing Role: Low-side switch in digitally controlled, adaptive-frequency buck converter with PMBus interface. Use Value: Low 12 nC Qoss reduces capacitive switching loss; robust 150 µA IDSS at 100 °C ensures stability over extended industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | RDS(on) = 4.5 mΩ @ 4.5 V, QG = 34 nC - lower on-resistance but higher gate charge | Better for ultra-low-loss, lower-frequency designs (<300 kHz); less suitable for high-frequency, gate-drive-limited systems | Choose when conduction loss dominates and gate driver can support 34 nC charge |
| SI7850DP-T1-GE3 | RDS(on) = 8.0 mΩ @ 4.5 V, QG = 20 nC - slightly lower RDS(on), lower QG, same SO-8 package | Higher Ciss (2500 pF vs. 2335 pF) may increase gate drive loss; identical thermal profile | Prefer for new designs seeking marginal RDS(on)/QG improvement with proven compatibility |
Compared with IRF7811WTRPBF, IRF7832TRPBF trades higher switching loss for lower conduction loss, while SI7850DP-T1-GE3 offers a balanced upgrade in both parameters - making it the most direct drop-in candidate for next-generation VRMs requiring incremental efficiency gains.
Availability
IRF7811WTRPBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulator modules, and GPU power delivery systems requiring stable component supply and long-term industrial availability.
Supply support for IRF7811WTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion applications, with the IRF7811WTRPBF specifically engineered for synchronous buck low-side FET roles in microprocessor and GPU voltage regulation.
FAQ
What is the maximum continuous drain current at 100°C ambient temperature?
The IRF7811WTRPBF supports 13 A continuous drain current at TL = 90°C (lead temperature), which correlates to approximately 9–10 A at TA = 100°C depending on PCB copper area and airflow. Derating must follow the normalized RDS(on) vs. temperature curve (Fig 1) and thermal impedance plot (Fig 7) to ensure TJ ≤ 150°C.
Is the IRF7811WTRPBF suitable for use as a high-side switch?
No - the IRF7811WTRPBF is optimized as a low-side synchronous rectifier FET. Its 1.0 V gate threshold and lack of integrated bootstrap circuitry make it unsuitable for high-side operation without external gate drive level-shifting. It is not rated for floating gate drive or source-switching configurations.
Does this MOSFET require a gate resistor for EMI suppression?
A small gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's 2.0–4.0 Ω intrinsic gate resistance helps, but external resistance improves EMI performance and reduces peak gate current stress during fast switching in high-dV/dt environments.
How does the body diode performance compare to an external Schottky diode?
The integrated body diode has VSD = 1.25 V at 15 A and Qrr = 45 nC, resulting in higher forward loss and reverse recovery loss than a parallel 10BQ040 Schottky (Qrr(s) = 41 nC). However, its co-packaged integration eliminates layout parasitics and simplifies PCB routing - a trade-off accepted in space-constrained VRMs where moderate efficiency loss is acceptable.
IRF7811WTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2335 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7811WTRPBF FAQ
1.How can I place an order for IRF7811WTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7811WTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7811WTRPBF reliable?
The price and inventory of IRF7811WTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811WTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7811WTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811WTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7811WTRPBF?
IRF7811WTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7811WTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7811WTRPBF?
For technical support, including IRF7811WTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811WTRPBF requirements.
6.How does Aetrix verify that IRF7811WTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7811WTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811WTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7811WTRPBF?
All IRF7811WTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811WTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7811WTRPBF part is unused and in its original packaging.
Return procedure for IRF7811WTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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