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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7815PBF

Name: IRF7815PBF
Brand: Infineon Technologies
SKU: IRF7815PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7815PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7815PBF.pdf

Description:: MOSFET N-CH 150V 5.1A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7815PBF from Infineon (formerly International Rectifier) is a 150V, 5.1A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier in isolated DC-DC converters and as a high-efficiency power switch in notebook CPU VRMs. It features 34 mΩ R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and fully characterized avalanche capability up to 529 mJ.

For engineers reviewing the IRF7815PBF datasheet, IRF7815PBF pinout, IRF7815PBF application, or IRF7815PBF equivalent, key selection criteria include its low conduction loss at 10 V drive, robust unclamped inductive switching performance, body diode recovery characteristics (Q_rr = 213–320 nC), and thermal resistance (R_θJA = 50 °C/W) in standard SO-8 mounting.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted drift region design to achieve low R_DS(on) while maintaining 150 V breakdown voltage. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) and negative temperature coefficient (−12.2 mV/°C) support stable current sharing in paralleled configurations.

The device integrates a fast, low-Q_rr intrinsic body diode suitable for synchronous rectification, with reverse recovery time (t_rr) of 41–62 ns under defined conditions (I_F = 3.1 A, di/dt = 300 A/µs). Avalanche energy rating (E_AS = 529 mJ) is specified at T_J = 25°C with unclamped inductive test circuit per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, enabling use in 48 V input DC-DC stages and notebook 12 V/19 V rail conversion.
R_DS(on) max	43 mΩ @ V_GS = 10 V - Ensures <125 mW conduction loss at 5.1 A DC, critical for thermally constrained VRM phases.
Q_g typ.	25 nC - Enables efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., IR35201 or similar).
I_D continuous	5.1 A @ T_A = 25°C - Rated for sustained load current in SO-8 footprint without forced airflow.
E_AS	529 mJ - Supports reliable operation during transient overloads and inductive turn-off events in synchronous buck topologies.
t_rr	41–62 ns - Limits reverse recovery losses and EMI generation when used as synchronous rectifier in flyback or forward converters.
R_θJA	50 °C/W - Requires PCB copper area ≥1 in² (with 2 oz Cu) to maintain T_J < 125°C at full rated current.

Pinout & Package

IRF7815PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad on underside for enhanced thermal dissipation. Pin numbering follows top-view orientation per datasheet Figure 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven pins internally connected to drain metallization - provides low-inductance, high-current path and thermal conduction to PCB copper pour.
6	Gate (G)	Single gate input - requires clean, low-impedance drive to minimize switching losses; sensitive to ESD (±20 V max rating).
Source (S)	Source (S)	Pin 6 is gate; source is connected to pins 1–5 and 7–8 via internal substrate tie - external source connection made through pins 1–5 and 7–8 (not pin 6).

Key Features

Feature	Design Value
Very low R_DS(on)	34 mΩ typ. @ 10 V - Reduces I²R losses by >30% vs. legacy 100 V MOSFETs in same package, improving VRM efficiency at light-to-moderate loads.
Fully characterized avalanche	529 mJ single-pulse rating - Eliminates need for external snubbers in hard-switched topologies where inductive energy must be absorbed internally.
Low gate charge	25 nC total - Allows use of low-power gate drivers and reduces dynamic losses in high-frequency (>500 kHz) synchronous rectifiers.
Optimized body diode	Q_rr = 213–320 nC, t_rr = 41–62 ns - Minimizes shoot-through risk and recovery-related voltage spikes in synchronous buck/flyback secondary-side switching.

Applications

Notebook CPU Voltage Regulator Module (VRM)

Isolated DC-DC Converter Secondary Side

Use Scenario: High-density, multi-phase buck converter supplying core voltage (e.g., 0.8–1.5 V) to Intel/AMD mobile processors.

IC Role / Device Role: High-side or low-side synchronous power switch operating at 300–1000 kHz with 10 V gate drive.

Use Value: 34 mΩ R_DS(on) enables ≤1.2 W conduction loss per phase at 5.1 A, supporting compact thermal design without heatsinks.

Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated forward or active-clamp forward converter for telecom/datacom systems.

IC Role / Device Role: Replacement for Schottky diode in output rectification stage, driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Body diode t_rr < 62 ns and Q_rr < 320 nC reduce switching node ringing and improve light-load efficiency by >2.5% vs. 40 V Schottky alternatives.

Industrial 24 V Input DC-DC Converter

Embedded System Point-of-Load (POL) Regulator

Use Scenario: 24 V input, 3.3 V/5 V output buck converter powering FPGA or ASIC in factory automation controllers.

IC Role / Device Role: Low-side synchronous MOSFET in fixed-frequency (500 kHz) buck stage with integrated controller (e.g., MP2451).

Use Value: 150 V V_DS rating provides 3× margin over 24 V nominal input, accommodating surge transients up to ±40 V without failure.

Use Scenario: Compact 12 V–1.2 V POL module on carrier board for ARM-based edge AI modules requiring <10 A peak current.

IC Role / Device Role: Bottom-FET in dual-MOSFET power stage, leveraging SO-8 footprint compatibility with common gate driver IC footprints.

Use Value: Standard SO-8 package allows drop-in replacement in existing layouts; R_θJA = 50 °C/W supports 5.1 A continuous operation with 2-layer 1 oz Cu PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832PBF	Lower V_DS (100 V), lower R_DS(on) (22 mΩ), higher Q_g (34 nC)	Not suitable for 48 V bus or surge-prone industrial inputs; better for 12–24 V POL only	Select when system V_IN ≤ 30 V and lowest conduction loss is priority over voltage margin.
SiR872DP-T1-GE3	Same V_DS (150 V), lower R_DS(on) (28 mΩ), lower Q_g (19 nC), PQFN5x6 package	Requires PCB redesign due to different footprint and thermal pad layout; no SO-8 pin compatibility	Select when upgrading thermal performance is feasible and SO-8 footprint lock-in is not required.

Compared with IRF7832PBF and SiR872DP-T1-GE3, IRF7815PBF offers balanced trade-offs: sufficient 150 V rating for 48 V systems, SO-8 compatibility for legacy designs, and verified avalanche ruggedness-making it preferred for cost-sensitive, footprint-constrained notebook and telecom power supplies.

Availability

IRF7815PBF is available at Aetrix Electronics and suitable for notebook VRMs, isolated DC-DC converters, industrial 24 V DC-DC supplies, and embedded POL regulators requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7815PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line delivers high-voltage, high-current switching solutions optimized for efficiency, ruggedness, and thermal reliability in server, computing, and telecom power conversion systems.

FAQ

What is the maximum safe operating voltage for IRF7815PBF in continuous DC operation?

The absolute maximum drain-to-source voltage (V_DS) is 150 V, and this rating applies to steady-state DC blocking conditions. Operation above 120 V DC is discouraged without derating for temperature and transients; actual design margin should maintain V_DS ≤ 100 V under worst-case surge (e.g., ISO 7637-2 Pulse 5a) to ensure long-term reliability.

Can IRF7815PBF be used as a high-side switch with bootstrap gate drive?

Yes - its 150 V V_DS and 20 V max V_GS rating support bootstrap-based high-side configuration in buck or half-bridge topologies. Gate drive must limit V_GS to ≤20 V and provide sufficient peak current (>1 A) to charge 25 nC Q_g within required dead-time windows.

Does IRF7815PBF have a qualified AEC-Q101 rating for automotive use?

No - IRF7815PBF is not AEC-Q101 qualified. It is intended for industrial, computing, and telecom applications. For automotive-grade equivalents, consider Infineon's OptiMOS™ 5 series (e.g., BSC014N04LS6) with explicit AEC-Q101 certification and extended temperature range.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

Its body diode has V_SD ≈ 1.3 V and Q_rr = 213–320 nC, which is higher conduction loss but lower reverse recovery charge than many 40 V Schottkys. In 12 V output converters switching >300 kHz, it achieves comparable or better efficiency due to elimination of forward voltage drop asymmetry and reduced EMI from controlled recovery.

IRF7815PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 43mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1647 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7815PBF FAQ

1.How can I place an order for IRF7815PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7815PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7815PBF reliable?

The price and inventory of IRF7815PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7815PBF is usually 5 days.

3.What payment methods are accepted for IRF7815PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7815PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7815PBF?

IRF7815PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7815PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7815PBF?

For technical support, including IRF7815PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7815PBF requirements.

6.How does Aetrix verify that IRF7815PBF is sourced from the original manufacturer or authorized distributors?

All IRF7815PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7815PBF meets industry standards.

7.What is the process for return or replacement of IRF7815PBF?

All IRF7815PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7815PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7815PBF part is unused and in its original packaging.

Return procedure for IRF7815PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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