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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7820PBF

Name: IRF7820PBF
Brand: Infineon Technologies
SKU: IRF7820PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7820PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7820PBF.pdf

Description:: MOSFET N CH 200V 3.7A 8-SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7820PBF from Infineon Technologies (formerly International Rectifier) is a 200V, 2.5A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous rectification and high-efficiency DC-DC conversion. It delivers 62.5 mΩ R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and features fully characterized avalanche capability with 606 mJ single-pulse energy rating. Used as secondary-side synchronous MOSFET in isolated notebook CPU power supplies and telecom DC-DC converters.

For engineers reviewing the IRF7820PBF datasheet, IRF7820PBF pinout, IRF7820PBF application, or IRF7820PBF equivalent, key selection criteria include its low R_DS(on) at 10 V drive, fast switching (t_r = 3.2 ns, t_f = 12 ns), body diode Q_rr = 213–320 nC, and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, designed for unidirectional high-frequency switching in hard-switched and resonant topologies. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining low conduction loss at 10 V gate bias.

The device exhibits strong temperature stability: R_DS(on) increases only ~1.8× from 25°C to 150°C (normalized curve), and V_GS(th) decreases linearly at −12 mV/°C. Avalanche ruggedness is validated per JEDEC JESD24-11, supporting reliable operation under inductive turn-off stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side isolation in 48 V input telecom DC-DC converters with margin
R_DS(on) max @ V_GS = 10 V	78 mΩ - enables <1.5 W conduction loss at 2.5 A continuous drain current
Q_g typ.	29 nC - reduces gate driver power demand and switching loss in 300–1000 kHz applications
I_D @ T_A = 25°C	2.5 A - defines maximum continuous current in SO-8 surface-mount layout without heatsink
E_AS	606 mJ - ensures single-pulse unclamped inductive switching survival up to I_AS = 2.8 A
Q_rr	213–320 nC - determines reverse recovery loss and cross-conduction risk in synchronous rectifier mode
R_θJA	50 °C/W - sets thermal rise limit of 125°C junction above ambient at 2.5 A, 78 mΩ

Pinout & Package

IRF7820PBF is housed in standard SO-8 (Small Outline-8) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source. The package supports JEDEC MS-012AC footprint and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-side switch node connection; all five pins electrically tied to internal drain metallization
4	Gate (G)	Control terminal; requires 10 V for full enhancement; ±20 V absolute max rating
6, 8	Source (S)	Power return path and reference for gate drive; dual pins reduce source inductance

Key Features

Feature	Design Value
Very low R_DS(on) at 10 V	62.5 mΩ typ. - minimizes I²R losses in high-current, low-voltage output rails
Fully characterized avalanche	606 mJ E_AS - eliminates need for external snubbers in flyback or forward converter outputs
Low gate charge	29 nC total - enables use with low-power gate drivers and reduces switching transition time
Enhanced body diode	Q_rr = 213–320 nC, t_rr = 33–50 ns - improves efficiency in synchronous rectifier mode vs. discrete Schottky solutions

Applications

Notebook CPU Core Voltage Regulator

Telecom Isolated DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in multiphase VRMs supplying Intel/AMD processors at ≤1.5 V / 50 A.

IC Role / Device Role / Timing Role: Low-side synchronous MOSFET replacing Schottky diode; switched at same frequency as primary-side FET (300–600 kHz).

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling higher efficiency (>92%) and lower thermal density on motherboard.

Use Scenario: Output rectification in 48 V input, 12 V/20 A isolated forward converter for enterprise switches.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary winding; driven by transformer-coupled or active clamp timing signals.

Use Value: Achieves 0.78 V_SD forward drop at 2.2 A, cutting diode loss by 65% versus 100 V Schottky, improving full-load efficiency by 1.2%.

Industrial PLC Power Module

Automotive Infotainment DC-DC Stage

Use Scenario: 24 V to 5 V/3.3 V intermediate bus conversion in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: High-side switch in buck regulator stage; operated with external PWM controller and bootstrap gate drive.

Use Value: With 200 V rating and 150°C T_J rating, sustains operation during 40 V load-dump transients without derating.

Use Scenario: 12 V to 5 V step-down for USB-C PD and display interface in automotive head units.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch in compact buck converter; driven by automotive-grade PWM IC.

Use Value: 78 mΩ R_DS(on) limits self-heating to <15°C rise at 2 A, meeting AEC-Q101 transient thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK20Z	200 V, 1.8 A, R_DS(on) = 1.5 Ω - 19× higher on-resistance, TO-92 package	Limited to <100 mA loads; unsuitable for synchronous rectification	Select only for ultra-low-cost, low-current linear regulation or protection circuits
SiHFL220	200 V, 2.7 A, R_DS(on) = 75 mΩ, Q_g = 25 nC - slightly lower gate charge, same SO-8 footprint	Identical thermal and switching performance; qualified to AEC-Q101	Preferred for automotive designs requiring qualification; otherwise functionally interchangeable

Compared with STP2NK20Z, IRF7820PBF enables >90% lower conduction loss in 2 A applications; versus SiHFL220, it trades minor Q_g increase for broader industrial qualification and legacy design support.

Availability

IRF7820PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, telecom DC-DC converters, industrial PLC power modules, and automotive infotainment DC-DC stages requiring stable component supply across multi-year production cycles.

Supply support for IRF7820PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET Power MOSFET product line targets high-efficiency switching applications in computing, communications, and industrial power supplies, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRF7820PBF at 70°C ambient?

The maximum continuous drain current is 1.6 A at T_A = 70°C with SO-8 mounting on 1-inch² 2-oz copper, based on thermal derating from 2.5 A at 25°C using R_θJA = 50 °C/W. This assumes no forced airflow and standard JEDEC test board conditions.

Does IRF7820PBF have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic p-n junction body diode rated for 2.2 A continuous source current and 2.8 A pulsed. Key parameters include V_SD = 1.3 V max at 2.2 A, t_rr = 33–50 ns, and Q_rr = 213–320 nC at T_J = 25°C, making it suitable for synchronous rectification without external diodes.

Can IRF7820PBF be used in avalanche mode repeatedly?

No - the 606 mJ E_AS rating applies only to single-pulse unclamped inductive switching. Repeated avalanche operation causes cumulative lattice damage and is not guaranteed by specification. Designers must avoid operating beyond SOA limits or implement clamping circuits for repetitive stress.

Is IRF7820PBF compatible with lead-free reflow soldering processes?

Yes - IRF7820PBF is RoHS-compliant and qualified for standard lead-free reflow profiles with peak temperatures up to 260°C (JEDEC J-STD-020). The SO-8 package meets MSL-1 moisture sensitivity level, eliminating bake requirements prior to assembly.

IRF7820PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1750 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7820PBF FAQ

1.How can I place an order for IRF7820PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7820PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7820PBF reliable?

The price and inventory of IRF7820PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7820PBF is usually 5 days.

3.What payment methods are accepted for IRF7820PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7820PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7820PBF?

IRF7820PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7820PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7820PBF?

For technical support, including IRF7820PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7820PBF requirements.

6.How does Aetrix verify that IRF7820PBF is sourced from the original manufacturer or authorized distributors?

All IRF7820PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7820PBF meets industry standards.

7.What is the process for return or replacement of IRF7820PBF?

All IRF7820PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7820PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7820PBF part is unused and in its original packaging.

Return procedure for IRF7820PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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