Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7821PBF

Name: IRF7821PBF
Brand: Infineon Technologies
SKU: IRF7821PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7821PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7821PBF.pdf

Description:: MOSFET N-CH 30V 13.6A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,316

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7821PBF from Infineon Technologies is a 30V, 13A N-channel HEXFET Power MOSFET in SO-8 package, optimized as synchronous rectifier FET in high-frequency buck converters. It delivers 7.0 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and fully characterized avalanche capability (44 mJ E_AS). Used in point-of-load DC/DC stages for server VRMs and telecom power modules.

For engineers reviewing the IRF7821PBF datasheet, IRF7821PBF pinout, IRF7821PBF application, or IRF7821PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V (9.1 mΩ max), Q_gd/Q_gs1 ratio impact on C_dv/dt immunity, body diode reverse recovery (Q_rr = 23–35 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, designed specifically for synchronous rectification where low conduction loss and fast switching are critical. Its gate threshold voltage (1.0–2.6 V) and negative temperature coefficient of V_GS(th) (−4.9 mV/°C) support stable current sharing in parallel configurations.

It operates in hard-switched clamped-inductive topologies with validated unclamped avalanche performance up to 44 mJ at T_J = 25°C. The 110 pF Crss and 2.9 nC Q_gd directly influence Miller-induced turn-on risk during high dV/dt node transitions in buck converter half-bridges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems.
R_DS(on) @ V_GS = 10 V	7.0 mΩ typ. - Enables <1.2 W conduction loss at 13 A RMS in 12 V output VRMs.
Q_g	9.3 nC typ. - Determines gate drive power and switching speed in 300–1000 kHz converters.
Q_rr	23–35 nC - Quantifies body diode recovery loss transferred to control FET during dead-time.
E_AS	44 mJ - Specifies single-pulse avalanche energy handling without failure under inductive fault.
R_θJA	50 °C/W - Limits junction temperature rise to ≤75°C at 1.6 W dissipation in standard SO-8 PCB layout.

Pinout & Package

IRF7821PBF is housed in a surface-mount SO-8 package with exposed drain pad for thermal enhancement. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source. This configuration supports high-current drain routing and low-inductance source return paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-current power path; all connected internally to common drain metallization and exposed pad.
4	Gate (G)	Control terminal; requires <10 V drive for full enhancement; sensitive to C_dv/dt coupling.
6, 8	Source (S)	Power return and reference node for gate drive; dual pins reduce source inductance in high-di/dt operation.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	9.1 mΩ max - Ensures efficient operation with 5 V gate drivers in cost-sensitive designs.
Fully characterized avalanche	44 mJ E_AS - Eliminates need for external snubbers in inductive load transients.
Optimized Q_gd/Q_gs1 ratio	2.9 nC / 2.5 nC = 1.16 - Reduces susceptibility to spurious turn-on during high dV/dt node switching.
Lead-free and RoHS compliant	Pb-free plating per JEDEC J-STD-020 - Meets industrial and networking equipment environmental requirements.

Applications

Server Voltage Regulator Modules

Telecom DC/DC Converters

Use Scenario: 12 V input to 1.2 V/100 A output VRM in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 500–800 kHz with 50 ns dead time.

Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 12 mΩ devices, improving full-load efficiency by 1.2%.

Use Scenario: Intermediate bus converter (48 V to 12 V) in 5G base station power supplies.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage with tight thermal constraints.

Use Value: SO-8 package with exposed drain enables 1.6 W continuous dissipation without heatsink, simplifying board layout.

Industrial PLC Power Supplies

Networking Switch PoE Controllers

Use Scenario: 24 V input to 3.3 V/5 A auxiliary rail in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback-derived topology.

Use Value: 1.0 V V_SD body diode forward drop minimizes cross-conduction loss during light-load discontinuous mode.

Use Scenario: 54 V input to 5 V/2 A PoE-powered device interface in enterprise switches.

IC Role / Device Role / Timing Role: High-efficiency buck regulator FET supporting IEEE 802.3bt Class 5/6 power delivery.

Use Value: 9.3 nC Q_g allows clean 1 MHz switching with standard gate drivers, reducing output filter size by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 11.5 nC; SO-8 with enhanced thermal pad	Higher gate charge increases drive loss at >600 kHz; better thermal R_θJA (42 °C/W)	Prefer when board-level thermal management is constrained but switching frequency ≤500 kHz.
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; 80 A rating	Larger footprint and higher cost; over-specified for ≤15 A point-of-load use cases	Select only when system-level current derating or long-term reliability margin exceeds 3× design peak current.

Compared with Si7852DP-T1-GE3 and IPB80N04S4-02, IRF7821PBF offers optimal balance of low gate charge (9.3 nC), moderate R_DS(on) (7.0 mΩ), and SO-8 manufacturability-making it ideal for space-constrained, high-frequency synchronous buck stages where drive loss and layout simplicity are prioritized over ultra-low conduction loss.

Availability

IRF7821PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF7821PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, communications, and industrial systems-emphasizing low R_DS(on), robust avalanche rating, and fast switching parameters.

FAQ

Is IRF7821PBF suitable for 4.5 V gate drive in synchronous buck applications?

Yes. Its R_DS(on) is specified at 9.1 mΩ max with V_GS = 4.5 V, enabling full enhancement using standard 5 V logic-level gate drivers. The 1.0–2.6 V V_GS(th) range ensures reliable turn-on even with driver voltage tolerance and PCB trace drop.

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70°C, the continuous drain current is 11 A with proper PCB copper area (≥1 in² 2 oz Cu). This is derived from the 1.6 W power dissipation limit and 50 °C/W R_θJA, assuming no forced airflow and standard SO-8 thermal land pattern.

Does IRF7821PBF have avalanche ruggedness rated for repetitive stress?

No. The datasheet specifies only single-pulse avalanche energy (E_AS = 44 mJ). Repetitive avalanche is not characterized or guaranteed. System design must avoid repeated inductive switching faults through proper gate timing and protection circuitry.

How does its body diode reverse recovery compare to Schottky alternatives?

The body diode exhibits Q_rr = 23–35 nC and t_rr = 28–42 ns-significantly higher than Schottky diodes but acceptable in synchronous rectification where the diode conducts only during dead time. Unlike Schottky, it supports bidirectional current flow and withstands reverse bias up to 30 V.

IRF7821PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7821PBF FAQ

1.How can I place an order for IRF7821PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7821PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7821PBF reliable?

The price and inventory of IRF7821PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7821PBF is usually 5 days.

3.What payment methods are accepted for IRF7821PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7821PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7821PBF?

IRF7821PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7821PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7821PBF?

For technical support, including IRF7821PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7821PBF requirements.

6.How does Aetrix verify that IRF7821PBF is sourced from the original manufacturer or authorized distributors?

All IRF7821PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7821PBF meets industry standards.

7.What is the process for return or replacement of IRF7821PBF?

All IRF7821PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7821PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7821PBF part is unused and in its original packaging.

Return procedure for IRF7821PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.