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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7821TRPBFXTMA1

Name: IRF7821TRPBFXTMA1
Brand: Infineon Technologies
SKU: IRF7821TRPBFXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7821TRPBFXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7821TRPBFXTMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7821TRPBFXTMA1 from Infineon Technologies is a 30V, 13A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as the synchronous rectifier FET in high-frequency buck converters. It delivers 7.0 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and features fully characterized avalanche capability (44 mJ E_AS) for robust operation in clamped inductive switching. Used in point-of-load DC/DC stages for servers and telecom equipment.

For engineers reviewing the IRF7821TRPBFXTMA1 datasheet, IRF7821TRPBFXTMA1 pinout, IRF7821TRPBFXTMA1 application, or IRF7821TRPBFXTMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V (9.1 mΩ), Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 23–35 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET operates as the low-side synchronous rectifier in non-isolated buck converters, where its low R_DS(on) minimizes conduction loss while fast switching (t_r = 2.7 ns, t_f = 7.3 ns) and low Q_gd (2.9 nC) suppress C_dv/dt-induced turn-on. Its body diode is rated for 100 A pulsed source current and exhibits 28–42 ns reverse recovery time under 10 A, 20 V conditions.

The device is characterized across temperature (–55 to +155 °C T_J) with ±20 V gate rating, 100 µA I_DSS, and 1.0–2.6 V V_GS(th) range. Avalanche energy is specified at 44 mJ (T_J = 25 °C), validated under unclamped inductive load per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; sets upper limit for input voltage in 12 V or 24 V bus applications.
R_DS(on) @ V_GS = 10 V	7.0 mΩ (typ), 9.1 mΩ (max) - Directly determines conduction loss in synchronous rectifier position at full load.
Q_g	9.3 nC (typ) - Governs gate drive power loss and switching speed; critical for >500 kHz converter designs.
Q_gd	2.9 nC (typ) - Key metric for C_dv/dt immunity; lower value reduces risk of false turn-on during high dV/dt node transitions.
Q_rr	23–35 nC - Quantifies body diode recovery charge; directly impacts shoot-through loss and stress on control FET.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance defines maximum power dissipation in standard SO-8 PCB layout (1 in² 2 oz Cu).

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source. Internally paralleled drain leads reduce inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-current output path; electrically tied to exposed copper pad for thermal and electrical conduction to PCB ground plane.
4	Gate (G)	Control terminal; requires <10 V drive for full enhancement; sensitive to C_dv/dt coupling from switching node.
6, 8	Source (S)	Return path for load current; referenced to controller IC ground; used for V_GS sensing in high-side gate drivers.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	9.1 mΩ max - Enables efficient operation with 5 V gate drive from common PWM controllers, reducing need for level-shifting.
Fully characterized avalanche	44 mJ single-pulse E_AS - Guarantees ruggedness against transient overvoltage during startup, overload, or fault conditions without external snubbers.
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.5 nC ≈ 1.16 - Minimizes Miller-induced gate voltage spikes, improving reliability in high dV/dt synchronous buck topologies.
Optimized body diode	Q_rr = 23–35 nC, t_rr = 28–42 ns - Reduces reverse recovery loss and cross-conduction risk when paired with fast-switching control FETs.

Applications

Server Point-of-Load Converter

Telecom DC/DC Module

Use Scenario: 12 V input to 1.2 V/100 A output stage in rack-mounted server VRMs.

IC Role / Device Role: Synchronous rectifier FET replacing Schottky diode to cut conduction loss and improve efficiency above 20 A.

Use Value: 7.0 mΩ R_DS(on) reduces I²R loss by >60% vs. typical 40 V Schottky, enabling >92% peak efficiency at 500 kHz switching.

Use Scenario: 48 V to 3.3 V intermediate bus converter in 5G base station power supply.

IC Role / Device Role: Low-side switch in multiphase buck regulator supplying FPGA core voltage.

Use Value: 9.3 nC Q_g and 2.7 ns rise time support clean 1 MHz operation with minimal gate drive overhead and reduced EMI.

Industrial PLC Power Stage

Networking Switch ASIC Supply

Use Scenario: 24 V input to 5 V/20 A auxiliary rail in programmable logic controller backplane.

IC Role / Device Role: Primary power switch in compact, thermally constrained DC/DC module.

Use Value: SO-8 package with exposed drain pad achieves 50 °C/W R_θJA, allowing 2.5 W continuous dissipation without heatsink in 4-layer board layout.

Use Scenario: 12 V to 0.85 V core supply for high-speed Ethernet switch ASIC with dynamic load steps.

IC Role / Device Role: Synchronous rectifier in adaptive voltage positioning (AVP) buck stage.

Use Value: 1.0 V V_SD body diode forward drop ensures low-loss freewheeling during light-load discontinuous conduction mode (DCM).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	Higher R_DS(on) (12.5 mΩ max @ 10 V), same SO-8 package and 30 V rating.	Suitable for lower-current (<8 A) or cost-sensitive designs where thermal margin allows higher conduction loss.	Select when gate drive voltage is ≥10 V and peak efficiency is secondary to BOM cost reduction.
SiR872DP-T1-GE3	Lower Q_g (7.3 nC typ), 30 V, 15 A, PowerPAK SO-8 package with improved R_θJA (40 °C/W).	Better suited for ultra-high-frequency (>1 MHz) or thermally aggressive environments requiring faster switching and lower junction rise.	Prefer when designing for >700 kHz operation or when PCB space allows PowerPAK footprint and enhanced thermal relief.

Compared with IRF7821TRPBFXTMA1, IRF7832TRPBF trades efficiency for cost at lower loads, while SiR872DP-T1-GE3 improves switching speed and thermal performance but requires layout adaptation for PowerPAK; all three share identical 30 V rating and SO-8-compatible mounting.

Availability

IRF7821TRPBFXTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and industrial PLC power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7821TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

Is IRF7821TRPBFXTMA1 lead-free and RoHS compliant?

Yes. The "PbF" suffix and "Lead-Free" notation in the official datasheet confirm compliance with EU RoHS Directive 2011/65/EU and JEDEC JS709B. All solderable terminations use matte tin plating over nickel, and the SO-8 package contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE.

Can IRF7821TRPBFXTMA1 be used with 5 V gate drive in a 3.3 V output buck converter?

Yes. At V_GS = 4.5 V, R_DS(on) is guaranteed ≤9.1 mΩ (max), and typical value is ~8.5 mΩ - sufficient for high-efficiency operation at 3.3 V/30 A. Gate threshold voltage (V_GS(th)) ranges from 1.0 to 2.6 V, ensuring reliable enhancement with 5 V logic-level drivers without requiring bootstrap or charge-pump circuitry.

What is the maximum continuous drain current at 70°C case temperature?

The datasheet specifies 11 A continuous drain current (I_D) at T_A = 70°C with SO-8 mounting on standard FR-4 PCB. This reflects derating from the 13 A rating at 25°C ambient due to thermal resistance (R_θJA = 50 °C/W); actual current capability depends on PCB copper area, airflow, and adjacent heat sources.

Does IRF7821TRPBFXTMA1 include an integrated body diode, and is it suitable for synchronous rectification?

Yes. It integrates a monolithic N-channel MOSFET with an inherent parasitic p-n body diode between source and drain. The diode is fully characterized (V_SD ≤ 1.0 V, Q_rr = 23–35 nC, t_rr = 28–42 ns) and explicitly qualified for synchronous rectification in buck converters - confirmed by Infineon's application note AN-1001 and Figure 17 gate charge waveform analysis.

IRF7821TRPBFXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8-902

IRF7821TRPBFXTMA1 FAQ

1.How can I place an order for IRF7821TRPBFXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7821TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7821TRPBFXTMA1 reliable?

The price and inventory of IRF7821TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7821TRPBFXTMA1 is usually 5 days.

3.What payment methods are accepted for IRF7821TRPBFXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7821TRPBFXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7821TRPBFXTMA1?

IRF7821TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7821TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7821TRPBFXTMA1?

For technical support, including IRF7821TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7821TRPBFXTMA1 requirements.

6.How does Aetrix verify that IRF7821TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?

All IRF7821TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7821TRPBFXTMA1 meets industry standards.

7.What is the process for return or replacement of IRF7821TRPBFXTMA1?

All IRF7821TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7821TRPBFXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7821TRPBFXTMA1 part is unused and in its original packaging.

Return procedure for IRF7821TRPBFXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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