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Infineon Technologies IRF7822PBF
- Part No.:
- IRF7822PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7822PBF.pdf
- Description:
- MOSFET N-CH 30V 18A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,679
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Product details
Overview
IRF7822PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in high-frequency DC-DC buck converters for CPU core power delivery. It delivers 5.0 mΩ RDS(on) at VGS = 4.5 V, 44 nC total gate charge, and 150 A pulsed drain current - enabling high-efficiency operation in compact point-of-load designs.
For engineers reviewing the IRF7822PBF datasheet, IRF7822PBF pinout, IRF7822PBF application, or IRF7822PBF equivalent, key selection criteria include its low RDS(on)/QG ratio, Cdv/dt-induced turn-on immunity, SO-8 thermal performance (RθJA = 40 °C/W), and suitability for synchronous buck topologies powering modern microprocessors.
Technical Context
This MOSFET employs trench-gate HEXFET technology to minimize conduction and switching losses simultaneously. Its 5.0 mΩ on-resistance at 4.5 V gate drive and 9.0 nC gate-to-drain charge (QGD) support fast, low-loss switching in high-duty-cycle synchronous rectification.
The device features enhanced Cdv/dt immunity critical for reliable operation in high-dV/dt node environments, and its body diode exhibits 1.0 V forward voltage at 15 A with 120 nC reverse recovery charge - reducing shoot-through risk and improving light-load efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports input rails up to 24 V in buck converters with margin |
| RDS(on) | 5.0 mΩ @ VGS = 4.5 V - enables <1 W conduction loss at 15 A continuous output |
| QG | 44 nC - balances gate drive strength and switching speed for 300–1000 kHz operation |
| QGD | 9.0 nC - minimizes Miller-induced delay and improves hard-switching robustness |
| RθJA | 40 °C/W - allows >3 W dissipation on standard 1-inch² PCB copper area |
| ID (TA = 70°C) | 13 A - defines practical continuous current limit under typical board-level thermal conditions |
| VGS(th) | 1.0 V - ensures full enhancement with logic-level gate drivers (e.g., 3.3 V or 5 V) |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA), thermally enhanced for vapor-phase and reflow soldering. Exposed drain pads on pins 1–4 and 6–8 provide low-inductance, high-current paths and improved heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 | Drain (D) | Parallel-connected high-current output path; tied to PCB ground plane for thermal and EMI control |
| 5 | Gate (G) | Control input requiring <44 nC charge; sensitive to ringing due to low VGS(th) |
| 7–8 | Source (S) | Return path for load current; common reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on)/QG ratio | ~114 Ω·nC - reduces combined conduction + switching loss in high-frequency buck stages |
| Cdv/dt immunity | Enhanced layout and process design - suppresses false turn-on during high dV/dt transitions in synchronous rectifiers |
| Body diode Qrr | 120 nC - lowers reverse recovery loss and EMI vs. standard MOSFETs in discontinuous conduction mode |
| Lead-free SO-8 | RoHS-compliant, JEDEC-standard footprint - compatible with automated assembly and IPC-7095 layout guidelines |
Applications
| Server CPU Core VRM | Laptop GPU Power Stage |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V at up to 120 A to Intel/AMD server CPUs. IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode with 300–600 kHz switching frequency. Use Value: 5.0 mΩ RDS(on) cuts conduction loss by ~35% vs. legacy 7.5 mΩ devices, directly improving VRM efficiency and thermal headroom. | Use Scenario: Compact dual-phase buck regulator powering discrete graphics processing units in thin-and-light notebooks. IC Role / Device Role / Timing Role: Low-side synchronous FET with fast turn-off (tf = 12 ns) to minimize dead-time losses. Use Value: 44 nC QG enables clean gate drive using integrated controller outputs without external buffers, saving board space. |
| Network Switch ASIC Supply | Industrial FPGA Core Rail |
Use Scenario: Point-of-load regulator delivering 1.0 V/40 A to high-speed network switch ASICs with tight transient response requirements. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier paired with a 30 V high-side FET in a 500 kHz buck stage. Use Value: 150 A pulsed current rating supports peak load transients without derating, maintaining regulation during burst-mode operation. | Use Scenario: Ruggedized 1.2 V/25 A power rail for Xilinx/Kintex FPGAs in industrial control PLCs operating at 85°C ambient. IC Role / Device Role / Timing Role: Thermally stable low-side FET with –55 to 150°C TJ range and 40 °C/W RθJA. Use Value: SO-8 package achieves >3 W dissipation on 2-oz copper PCB, eliminating need for heatsinks in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832PBF | RDS(on) = 3.3 mΩ @ 4.5 V; QG = 52 nC; higher conduction loss trade-off for lower on-resistance | Better suited for ultra-low-voltage, high-current phases where <3 mΩ is critical | Select when RDS(on) reduction outweighs gate drive power increase |
| Si7852DP | RDS(on) = 4.8 mΩ @ 4.5 V; QG = 36 nC; different SO-8 footprint (non-JEDEC), lower QGD | Optimized for faster switching in 1 MHz+ multiphase VRMs with tighter layout constraints | Prefer when board space is limited and gate drive capability is constrained |
Compared with IRF7822PBF, IRF7832PBF offers lower RDS(on) but demands more gate drive energy, while Si7852DP provides superior QG/QGD balance for very high-frequency operation - making IRF7822PBF the optimal mid-frequency, cost-performance balance for mainstream CPU/GPU VRMs.
Availability
IRF7822PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop GPU power stages, and industrial FPGA core rails requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF7822PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7822PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.
FAQ
Is IRF7822PBF suitable for 3.3 V gate drive?
Yes. With a gate threshold voltage (VGS(th)) of 1.0 V and guaranteed RDS(on) at VGS = 4.5 V, the IRF7822PBF fully enhances using standard 3.3 V logic-level gate drivers. Its low VGS(th) ensures strong channel formation even with marginal overdrive, supporting robust operation in noise-prone environments.
What is the maximum continuous current at 85°C ambient?
At TA = 85°C, the device's continuous drain current is derated to approximately 9.5 A based on its 3.0 W power dissipation limit at 70°C and RθJA = 40 °C/W. This assumes a standard 1-inch² copper pad; actual current depends on PCB layout and airflow.
Does IRF7822PBF have avalanche rating?
No. The IRF7822PBF is not rated for repetitive avalanche operation. Its absolute maximum ratings specify only unclamped inductive switching limits. For designs subject to inductive energy recovery or fault conditions, external clamping or snubbing is required to prevent junction failure.
Can it replace IRF7807 in existing designs?
Yes, with verification. Both are SO-8 N-channel MOSFETs, but IRF7822PBF has lower RDS(on) (5.0 mΩ vs. 7.0 mΩ) and higher QG (44 nC vs. 32 nC). Gate drive strength and layout parasitics must be reviewed to ensure no oscillation or excessive switching loss occurs due to increased gate charge.
IRF7822PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7822PBF FAQ
1.How can I place an order for IRF7822PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7822PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7822PBF reliable?
The price and inventory of IRF7822PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7822PBF is usually 5 days.
3.What payment methods are accepted for IRF7822PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7822PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7822PBF?
IRF7822PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7822PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7822PBF?
For technical support, including IRF7822PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7822PBF requirements.
6.How does Aetrix verify that IRF7822PBF is sourced from the original manufacturer or authorized distributors?
All IRF7822PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7822PBF meets industry standards.
7.What is the process for return or replacement of IRF7822PBF?
All IRF7822PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7822PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7822PBF part is unused and in its original packaging.
Return procedure for IRF7822PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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