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Infineon Technologies IRF7822TRPBF
- Part No.:
- IRF7822TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7822TRPBF.pdf
- Description:
- MOSFET N-CH 30V 18A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,584
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Product details
Overview
IRF7822TRPBF from Infineon Technologies is an N-channel HEXFET® Power MOSFET in SO-8 package, optimized for synchronous buck converters in CPU core power delivery. It delivers 5.0 mΩ RDS(on) at VGS = 4.5 V, 44 nC total gate charge, and 150 µA IDSS leakage at 100°C - enabling high-efficiency DC-DC conversion in microprocessor VRMs.
For engineers reviewing the IRF7822TRPBF datasheet, IRF7822TRPBF pinout, IRF7822TRPBF application, or IRF7822TRPBF equivalent, key selection criteria include low RDS(on)/QG ratio (114 Ω·nC), Cdv/dt immunity for synchronous FET operation, and SO-8 thermal performance with RθJA = 40 °C/W on standard PCB.
Technical Context
This MOSFET employs trench-gated HEXFET technology to minimize conduction and switching losses simultaneously. Its 5.0 mΩ RDS(on) at 4.5 V gate drive and 9.0 nC QGD support fast, low-loss switching in high-frequency synchronous buck topologies.
The device features enhanced Cdv/dt immunity to prevent false turn-on during high-slew-rate transitions, validated by 120 nC reverse recovery charge (Qrr) and 1.0 V source-drain diode forward voltage at 15 A - critical for robust body-diode commutation in multiphase VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports input rails up to 24 V in CPU core converters with margin |
| RDS(on) | 5.0 mΩ @ VGS = 4.5 V - enables <1.5 W conduction loss at 15 A output current |
| QG | 44 nC @ VGS = 5.0 V - balances gate drive strength and switching speed for 300–1000 kHz operation |
| QGD | 9.0 nC - minimizes Miller plateau duration and improves hard-switching robustness |
| RθJA | 40 °C/W - allows ≥3.0 W continuous power dissipation on 1-inch² copper PCB |
| VGS(th) | 1.0 V - ensures reliable enhancement-mode turn-on with 3.3 V or 5 V gate drivers |
| ID (TA = 70°C) | 13 A - defines maximum continuous current under typical VRM board temperature conditions |
Pinout & Package
IRF7822TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for thermal and electrical connection. The package supports vapor-phase, IR, convection, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (D) | Drain | Parallel-connected drain terminals form low-inductance, high-current path to ground plane |
| 5 (G) | Gate | Single gate input with 1.5 Ω internal gate resistance - reduces ringing without external damping |
| 7–8 (S) | Source | Common-source connection for synchronous FET; ties to power ground return path |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on)/QG ratio | 114 Ω·nC - maximizes efficiency across 300–1000 kHz switching frequencies in VRMs |
| Cdv/dt-induced turn-on immunity | Validated via low QGD/QG ratio (20.5%) - prevents spurious turn-on during high dV/dt transitions |
| Low reverse recovery charge | Qrr = 120 nC - reduces body-diode switching loss and EMI in discontinuous conduction mode |
| Lead-free SO-8 packaging | RoHS-compliant, JEDEC MS-012AA outline - compatible with standard SMT reflow profiles |
| High-temperature leakage control | IDSS = 150 µA @ TJ = 100°C - maintains stability in thermally constrained VRM layouts |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery Module |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86/ARM processors. IC Role / Device Role / Timing Role: Synchronous high-side or low-side FET in 300–1000 kHz PWM-controlled VRM. Use Value: 5.0 mΩ RDS(on) and 44 nC QG reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% vs. legacy 8 mΩ devices. | Use Scenario: Compact, high-density power stage for discrete or integrated GPU VRMs in gaming laptops and workstations. IC Role / Device Role / Timing Role: Low-side synchronous rectifier handling peak currents >20 A per phase with fast body-diode recovery. Use Value: 120 nC Qrr and 1.0 V VSD minimize reverse recovery energy and forward conduction loss during light-load DCM operation. |
| Server Memory Regulator | AI Accelerator Power Stage |
Use Scenario: DDR5 memory channel VRM delivering tightly regulated 1.1 V with fast transient response. IC Role / Device Role / Timing Role: High-frequency (≥800 kHz) synchronous FET operating with tight gate drive timing margins. Use Value: 9.0 nC QGD and 1.5 Ω RG ensure clean, predictable turn-on/turn-off edges - reducing shoot-through risk in high-dV/dt environments. | Use Scenario: Distributed point-of-load (POL) regulator for FPGA or ASIC tiles requiring dynamic voltage scaling. IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) FET supporting adaptive frequency and phase shedding. Use Value: 13 A continuous current rating at 70°C ambient and 40 °C/W RθJA enable stable operation in thermally dense AI module PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | RDS(on) = 3.3 mΩ @ 4.5 V; QG = 52 nC; higher conduction efficiency but increased switching loss | Better suited for lower-frequency (<500 kHz), high-current phases where conduction dominates | Select when prioritizing full-load efficiency over light-load EMI or gate drive capability |
| SiR872DP-T1-GE3 | RDS(on) = 4.2 mΩ @ 4.5 V; QG = 39 nC; tighter RDS(on) distribution and lower QGD/QG ratio | Enhanced Cdv/dt immunity and improved gate drive margin in ultra-high-speed (>1 MHz) VRMs | Select when operating above 800 kHz or requiring tighter parametric consistency across production lots |
Compared with IRF7822TRPBF, IRF7832TRPBF trades higher gate charge for lower RDS(on), while SiR872DP-T1-GE3 offers superior gate charge linearity and Cdv/dt margin - making it preferable for high-frequency, high-reliability AI/ML accelerator power stages.
Availability
IRF7822TRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and server memory regulators requiring stable component supply and long-term industrial availability.
Supply support for IRF7822TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7822TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.
FAQ
Is IRF7822TRPBF suitable for synchronous rectification in buck converters?
Yes. Its low 5.0 mΩ RDS(on) at 4.5 V, 120 nC Qrr, and 1.0 V VSD make it ideal as a low-side synchronous FET in buck converters. The device's Cdv/dt immunity prevents false turn-on during high-slew-rate transitions, ensuring robust commutation in multi-phase VRMs.
What is the maximum continuous drain current at 85°C ambient temperature?
At TA = 85°C, derating from the 13 A rating at 70°C yields approximately 9.5 A continuous drain current, based on its 40 °C/W RθJA and 150°C max junction temperature. This assumes 1-inch² copper pad and still-air convection cooling per JEDEC standards.
Does IRF7822TRPBF require a gate resistor for stable operation?
A small gate resistor (2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. The device's internal 1.5 Ω RG provides partial damping, but external resistance improves EMI and shoot-through margin in high-speed, high-current VRM designs.
Can IRF7822TRPBF be used in place of IRF7807 in existing designs?
Yes, with validation. Both are SO-8 N-channel MOSFETs, but IRF7822TRPBF offers 5.0 mΩ vs. IRF7807's 7.0 mΩ RDS(on) and lower QG (44 nC vs. 55 nC). Gate threshold (1.0 V) and VDS (30 V) match, so no driver changes are needed - however, layout thermal performance must be verified due to higher power density.
IRF7822TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7822TRPBF FAQ
1.How can I place an order for IRF7822TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7822TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7822TRPBF reliable?
The price and inventory of IRF7822TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7822TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7822TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7822TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7822TRPBF?
IRF7822TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7822TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7822TRPBF?
For technical support, including IRF7822TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7822TRPBF requirements.
6.How does Aetrix verify that IRF7822TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7822TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7822TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7822TRPBF?
All IRF7822TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7822TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7822TRPBF part is unused and in its original packaging.
Return procedure for IRF7822TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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