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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7828PBF

Name: IRF7828PBF
Brand: Infineon Technologies
SKU: IRF7828PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7828PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7828PBF.pdf

Description:: MOSFET N-CH 30V 13.6A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7828PBF from Infineon Technologies is an N-channel HEXFET® Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in CPU core DC-DC buck converters. It delivers 9.5 mΩ R_DS(on) at V_GS = 4.5 V, 9.2 nC total gate charge, and 13.6 A continuous drain current (T_A = 25°C), enabling high-efficiency power delivery for microprocessor VRMs.

For engineers reviewing the IRF7828PBF datasheet, IRF7828PBF pinout, IRF7828PBF application, or IRF7828PBF equivalent, key selection criteria include low R_DS(on)/Q_G ratio, C_dv/dt immunity for synchronous FET operation, thermal resistance (R_θJA = 50 °C/W), and SO-8 PCB-mount power dissipation capability up to 2.5 W.

Technical Context

This MOSFET employs advanced trench-gate HEXFET technology to minimize conduction and switching losses simultaneously. Its 9.5 mΩ on-resistance at 4.5 V gate drive and 2.9 nC gate-to-drain charge (Q_GD) support fast, low-loss switching in high-frequency synchronous buck topologies.

The device features enhanced C_dv/dt immunity to prevent false turn-on during high-slew-rate node transitions, critical for high-side or low-side synchronous FET roles. Its body diode exhibits 13 nC reverse recovery charge (Q_rr) under 700 A/µs di/dt, enabling efficient freewheeling in non-overlap-controlled converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V in point-of-load converters with margin.
R_DS(on)	9.5 mΩ @ V_GS = 4.5 V - Enables <1.5 W conduction loss at 12 A, critical for VRM efficiency.
Q_G	9.2 nC @ V_GS = 5 V - Low gate drive energy reduces controller loading and switching loss.
Q_GD	2.9 nC - Minimizes Miller-induced delay and improves hard-switching robustness.
R_θJA	50 °C/W - Allows 2.5 W continuous dissipation on standard 1-in² copper PCB.
Q_rr	13 nC @ di/dt = 700 A/µs - Reduces body-diode switching loss and EMI in synchronous rectification.

Pinout & Package

SO-8 surface-mount package (EIA-481 compliant), 5.0 mm × 6.0 mm footprint, 1.75 mm max height, designed for vapor-phase, IR, convection, and wave soldering. Thermal pad not present; power dissipation relies on copper pour and trace routing.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8	Drain (D)	Internally paralleled drain terminals - connected to high-current output node (e.g., switch node in buck converter).
5	Gate (G)	Single gate input - requires low-impedance driver to manage 9.2 nC charge and suppress ringing.
Source (S)	Source (S)	Pins 1–4 and 6–8 are drains; pin 5 is gate; pins labeled "S" in top view are pins 1, 2, 3, 4, 6, 7, 8? No - per top-view diagram: pins 1, 2, 3, 4 = D; pin 5 = G; pins 6, 7, 8 = S - correction: pins 6, 7, 8 are Source terminals (3× parallel source connections).

Key Features

Feature	Design Value
Optimized R_DS(on)/Q_G ratio	9.5 mΩ / 9.2 nC = 1.03 Ω·nC - balances conduction and switching loss for 300–1000 kHz VRM operation.
C_dv/dt-induced turn-on immunity	Validated for high dV/dt nodes in synchronous buck - prevents shoot-through in low-side FET position.
Low Q_oss	6.1 nC @ V_DS = 10 V - reduces capacitive switching loss during hard commutation.
Body diode Q_rr	13 nC with 700 A/µs di/dt - enables clean freewheeling without voltage spikes in non-overlap control schemes.

Applications

CPU Core VRM

GPU Voltage Regulator

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86 or ARM CPUs.

IC Role / Device Role: Low-side synchronous rectifier FET, conducting during bottom-switch conduction interval.

Use Value: 9.5 mΩ R_DS(on) minimizes I²R loss at >100 A per phase; SO-8 thermal design supports 2.5 W dissipation per FET.

Use Scenario: Compact, high-density VRM on GPU reference boards requiring rapid transient response.

IC Role / Device Role: High-side or low-side switching FET in 300–600 kHz buck stage with tight layout constraints.

Use Value: 9.2 nC Q_G enables fast switching with minimal gate driver stress; SO-8 footprint simplifies multi-phase layout.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: DDR5 memory subsystem VRM delivering 1.1–1.8 V at up to 60 A per channel.

IC Role / Device Role: Synchronous rectifier in interleaved two-phase buck converter.

Use Value: 13 nC Q_rr ensures low-loss body-diode conduction during dead-time; 150 °C T_J(max) supports high-ambient server environments.

Use Scenario: Point-of-load regulator for FPGA or ASIC fabric powering AI inference accelerators.

IC Role / Device Role: Low-R_DS(on) switching FET in compact, high-efficiency 500 kHz buck converter.

Use Value: 50 °C/W R_θJA allows stable operation on dense PCBs without heatsinks; lead-free SO-8 complies with RoHS requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 7.2 mΩ @ 4.5 V; Q_G = 12.5 nC; SO-8 package	Lower R_DS(on) but higher Q_G - favors lower conduction loss over switching loss.	Prefer when board-level thermal management permits higher gate drive loss for reduced I²R heating.
IPB80N04S4-03	R_DS(on) = 3.0 mΩ @ 4.5 V; TO-263 package; higher current rating (80 A)	Larger footprint and higher thermal mass - suited for higher-power single-phase designs.	Select only if SO-8 footprint constraint is relaxed and >20 A per FET is required.

Compared with SiR872DP and IPB80N04S4-03, the IRF7828PBF offers the best balance of low R_DS(on), moderate Q_G, and SO-8 manufacturability for space-constrained, multi-phase CPU/GPU VRMs where thermal budget is tightly managed.

Availability

IRF7828PBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU voltage regulators, and AI accelerator power stages requiring stable component supply, RoHS-compliant packaging, and consistent SO-8 form factor across production batches.

Supply support for IRF7828PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency DC-DC conversion, with IRF7828PBF specifically engineered for synchronous buck converter applications in computing and AI infrastructure.

FAQ

What is the maximum continuous drain current for IRF7828PBF at 70°C case temperature?

The maximum continuous drain current is 11 A at T_L = 70°C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area for heat spreading and accounts for junction-to-lead thermal resistance (R_θJL = 20 °C/W). Derating applies above 70°C.

Does IRF7828PBF have a Kelvin source connection for improved gate control?

No, IRF7828PBF does not feature a Kelvin source. It uses standard 3-pin source configuration (pins 6, 7, 8) in SO-8. Gate drive loop inductance must be minimized externally via short, wide traces and local decoupling to maintain switching stability.

Can IRF7828PBF be used as a high-side switch in a floating-gate configuration?

Yes - its ±20 V gate-source rating and 30 V V_DS support high-side use in bootstrap-gated buck converters. However, gate drive voltage must remain within ±20 V relative to source, and C_dv/dt immunity must be verified against actual node slew rates in the target layout.

What is the typical reverse recovery charge (Q_rr) of the body diode under standard test conditions?

The typical reverse recovery charge is 13 nC, measured at V_DS = 16 V, V_GS = 0 V, I_S = 15 A, and di/dt ≈ 700 A/µs. This value reflects performance with the internal body diode only - no external Schottky is assumed unless explicitly added in circuit design.

IRF7828PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7828PBF FAQ

1.How can I place an order for IRF7828PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7828PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7828PBF reliable?

The price and inventory of IRF7828PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7828PBF is usually 5 days.

3.What payment methods are accepted for IRF7828PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7828PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7828PBF?

IRF7828PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7828PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7828PBF?

For technical support, including IRF7828PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7828PBF requirements.

6.How does Aetrix verify that IRF7828PBF is sourced from the original manufacturer or authorized distributors?

All IRF7828PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7828PBF meets industry standards.

7.What is the process for return or replacement of IRF7828PBF?

All IRF7828PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7828PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7828PBF part is unused and in its original packaging.

Return procedure for IRF7828PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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