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Infineon Technologies IRF7828TRPBF
- Part No.:
- IRF7828TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7828TRPBF.pdf
- Description:
- MOSFET N-CH 30V 13.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,256
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Product details
Overview
IRF7828TRPBF from Infineon Technologies is an N-channel HEXFET® Power MOSFET in SO-8 package, optimized for synchronous buck converter high-side and low-side switching in CPU core power delivery. It delivers 9.5 mΩ RDS(on) at VGS = 4.5 V, 13.6 A continuous drain current (TA = 25°C), and 9.2 nC total gate charge - enabling high-efficiency, high-frequency DC-DC conversion for microprocessor VRMs.
For engineers reviewing the IRF7828TRPBF datasheet, IRF7828TRPBF pinout, IRF7828TRPBF application, or IRF7828TRPBF equivalent, key selection criteria include RDS(on)/QG trade-off, Cdv/dt immunity for synchronous FET operation, thermal resistance (RθJA = 50°C/W), and SO-8 footprint compatibility with dual-MOSFET phase-leg layouts.
Technical Context
This MOSFET employs trench-gate HEXFET technology to minimize conduction and switching losses simultaneously. Its 9.5 mΩ on-resistance at 4.5 V gate drive and low 2.9 nC gate-to-drain charge (QGD) reduce turn-on delay and improve hard-switching robustness in synchronous buck topologies.
The device features enhanced Cdv/dt immunity to prevent false turn-on during high dV/dt transitions, critical for low-side FETs in fast-switching VRMs. Its body diode exhibits 13 nC reverse recovery charge (Qrr) and 1.0 V forward voltage at 10 A, supporting efficient synchronous rectification without external Schottky parallelization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 12 V input rails with margin for transient spikes in CPU core converters |
| RDS(on) | 9.5 mΩ @ VGS = 4.5 V - enables <1 W conduction loss at 10 A, critical for >90% efficiency targets |
| QG | 9.2 nC - balances gate drive strength and switching speed for 500 kHz–1 MHz operation |
| QGD | 2.9 nC - minimizes Miller plateau duration, improving controllability in high-dV/dt environments |
| RθJA | 50 °C/W - allows 2.5 W dissipation on standard 1-in² PCB copper, sufficient for 15 A peak loads |
| Qrr | 13 nC - reduces body-diode recovery loss and EMI in synchronous rectification mode |
| VGS(th) | 1.0 V - ensures full enhancement with 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
IRF7828TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012, EIA-481 compliant), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package supports vapor-phase, infrared, convection, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Parallel-connected high-current output path; pins 1–4 and 6–8 share internal die drain metallization |
| 5 | Gate (G) | Control terminal requiring <10 V drive; low 2.3 Ω gate resistance enables fast edge rates |
| Source (S) | Source (S) | Internal connection to pins 5 and 6 - pin 5 is gate, so source is pins 1–4/6–8 common return via substrate; actual source terminals are pins 1–4 and 6–8 ground-side connections in typical layout |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) / QG ratio | 1.03 mΩ·nC - directly improves figure-of-merit for high-frequency synchronous buck stages |
| Cdv/dt immunity | Rated for high dV/dt stress without spurious turn-on - eliminates need for negative gate drive or gate clamping in low-side position |
| Body diode Qrr | 13 nC - enables clean zero-voltage switching (ZVS) transitions in resonant and hybrid topologies |
| Lead-free SO-8 packaging | RoHS-compliant, compatible with IPC-J-STD-020 reflow profiles up to 260°C peak |
Applications
| Server CPU VRM | Laptop Core Power |
|---|---|
Use Scenario: 12 V input to 0.8–1.3 V output, 30–60 A per phase, 500 kHz–1 MHz switching frequency. IC Role / Device Role / Timing Role: Low-side synchronous FET in dual-phase interleaved buck converter; handles high RMS current and fast commutation. Use Value: 9.5 mΩ RDS(on) and 13.6 A rating reduce conduction loss by >25% vs. legacy 15 mΩ devices at same current density. | Use Scenario: Thin-and-light notebook motherboard with space-constrained 2-phase VRM for Intel Core i7/i9 processors. IC Role / Device Role / Timing Role: High-side FET paired with complementary low-side MOSFET; driven by integrated PWM controller with 4.5 V gate output. Use Value: 1.0 V VGS(th) ensures full enhancement at 3.3 V gate drive, eliminating level-shifter requirements in compact designs. |
| GPU Power Delivery | ASIC Core Rail |
Use Scenario: Discrete 4-phase VRM supplying 0.7–1.2 V to NVIDIA/AMD GPU cores under dynamic 100+ A load transients. IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode (CCM) with tight dead-time control. Use Value: 2.9 nC QGD shortens Miller plateau, enabling sub-20 ns dead-time tuning and minimizing shoot-through risk. | Use Scenario: FPGA or AI accelerator SoC requiring ultra-low-noise, tightly regulated 0.6–0.85 V core supply with fast load-step response. IC Role / Device Role / Timing Role: Low-inductance, low-RDS(on) FET in compact 3-phase stacked inductor design. Use Value: 50°C/W RθJA and SO-8 thermal pad enable 2.5 W dissipation without heatsink - critical for fanless embedded acceleration modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | RDS(on) = 6.8 mΩ @ 4.5 V, QG = 12.5 nC - lower on-resistance but higher gate charge | Better for low-frequency, high-current phases where conduction loss dominates | Prefer when thermal budget allows higher drive power and switching frequency ≤ 300 kHz |
| SiR872DP-T1-GE3 | RDS(on) = 8.0 mΩ @ 4.5 V, QG = 10.5 nC, RθJA = 42°C/W - improved thermal performance in PQFN | Requires PCB redesign (PQFN-8 vs SO-8); better for space-constrained, high-power-density boards | Select only if board layout permits PQFN footprint and thermal vias can be added under exposed pad |
Compared with IRF7832TRPBF and SiR872DP-T1-GE3, the IRF7828TRPBF offers the best balance of low QG, adequate RDS(on), and SO-8 compatibility - making it optimal for cost-sensitive, mid-frequency CPU VRMs where layout reuse and driver simplicity are prioritized.
Availability
IRF7828TRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, laptop core power supplies, GPU power delivery systems, and ASIC core rail designs requiring stable component supply across multi-year production cycles.
Supply support for IRF7828TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.
The IRF7828TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing power delivery - emphasizing RDS(on)/QG optimization and Cdv/dt robustness.
FAQ
What is the maximum safe operating junction temperature for IRF7828TRPBF?
The absolute maximum junction temperature is 150°C, and the device is rated for continuous operation up to this limit. Derating begins above 25°C ambient per the transient thermal impedance curve (Figure 7), with RθJA = 50°C/W defining steady-state limits on standard PCBs. Operation beyond 150°C risks permanent parametric shift or bond-wire failure.
Can IRF7828TRPBF be used as a high-side switch with 12 V gate drive?
Yes - its ±20 V gate-source rating and 1.0 V threshold voltage ensure reliable enhancement with 12 V gate drive. However, in high-side configurations, a bootstrap or isolated gate driver is required to maintain VGS > 4.5 V during high-side conduction, as the source potential swings near the input rail.
Does IRF7828TRPBF require a Schottky diode in parallel for body diode operation?
No - the device's 13 nC Qrr and 1.0 V VSD are optimized for synchronous rectification without external parallel diodes. Adding a Schottky would increase layout complexity and parasitic inductance, potentially degrading EMI and efficiency in well-designed VRMs.
Is IRF7828TRPBF suitable for automotive applications?
No - per Infineon's qualification documentation, this part is designed and qualified for consumer-grade applications only. It does not meet AEC-Q101 stress test requirements or automotive temperature range (−40°C to 150°C) validation, and lacks automotive-specific reliability reporting or PPAP support.
IRF7828TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 12.5mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1010 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7828TRPBF FAQ
1.How can I place an order for IRF7828TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7828TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7828TRPBF reliable?
The price and inventory of IRF7828TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7828TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7828TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7828TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7828TRPBF?
IRF7828TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7828TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7828TRPBF?
For technical support, including IRF7828TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7828TRPBF requirements.
6.How does Aetrix verify that IRF7828TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7828TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7828TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7828TRPBF?
All IRF7828TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7828TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7828TRPBF part is unused and in its original packaging.
Return procedure for IRF7828TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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