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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7831PBF

Name: IRF7831PBF
Brand: Infineon Technologies
SKU: IRF7831PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7831PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7831PBF.pdf

Description:: MOSFET N-CH 30V 21A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,730

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Product details

Overview

IRF7831PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 21A N-channel Power MOSFET in SO-8 package optimized as the synchronous FET in high-frequency point-of-load buck converters. It features 3.6 mΩ R_DS(on) at V_GS = 10 V, 40 nC total gate charge, and fully characterized avalanche capability for robust operation under clamped inductive switching.

For engineers reviewing the IRF7831PBF datasheet, IRF7831PBF pinout, IRF7831PBF application, or IRF7831PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance for fast switching, Q_gd/Q_gs1 ratio critical to C_dv/dt immunity, and body diode reverse recovery performance in synchronous rectification.

Technical Context

This device is designed specifically for the low-side (synchronous FET) position in non-isolated DC/DC converters, where conduction loss, gate drive loss, and output charge dissipation dominate efficiency. Its SO-8 footprint enables dual-MOSFET integration with matched thermal coupling to the control FET.

It operates with gate drive voltages down to 4.5 V, supports continuous drain current up to 17 A at T_A = 70 °C, and delivers 100% tested R_G for predictable turn-on timing. The body diode exhibits 42–62 ns t_rr and 31–47 nC Q_rr, directly impacting shoot-through risk and loss distribution in the high-side FET.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus systems and 12 V intermediate bus architectures.
R_DS(on) max	3.6 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 20 A RMS in typical POL applications.
Q_g typ.	40 nC - Determines gate drive power and switching speed; impacts gate driver sizing and dead-time optimization.
Q_rr	31–47 nC - Directly contributes to high-side FET loss and EMI during body diode commutation.
t_r/t_f	10 ns / 5.3 ns - Supports >1 MHz switching frequencies with minimal overlap loss in synchronous buck topologies.
R_θJA	50 °C/W - Defines thermal derating in standard SO-8 PCB layouts without heatsinking.
E_AS	100 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during unclamped inductive transients.

Pinout & Package

IRF7831PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires low-impedance drive to minimize C_dv/dt turn-on risk due to Q_gd/Q_gs1 ratio.
2–4, 6–8 (D)	Drain	High-current output node; all pins internally connected to common drain metallization and thermal pad.
5 (S)	Source	Power return path and gate reference; tied to power ground plane in synchronous buck layout.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables efficient operation with 5 V gate drivers common in POL controllers, reducing conduction loss at light loads.
Fully characterized avalanche	100% tested E_AS and I_AR ensure robustness against transient overvoltage events in unclamped inductive circuits.
Low Q_gd/Q_gs1 ratio	Minimizes susceptibility to C_dv/dt induced turn-on during high dV/dt switching node transitions.
Optimized body diode t_rr	42–62 ns reverse recovery time reduces shoot-through current and associated losses in synchronous rectification.

Applications

Server VRM

Network Switch POL

Use Scenario: 12 V input to 1.0–1.8 V output conversion for CPU/GPU core rails in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous FET in multiphase buck converter; switches at 500 kHz–1 MHz with precise dead-time control.

Use Value: 3.6 mΩ R_DS(on) and 40 nC Q_g enable >92% efficiency at 100 A per phase while maintaining thermal margin on standard 2 oz copper PCBs.

Use Scenario: Point-of-load regulation for ASIC/FPGA I/O and SerDes supplies in 10/25/100 GbE switches.

IC Role / Device Role / Timing Role: Low-side switch in compact, high-density buck modules operating at ≥1 MHz with tight transient response.

Use Value: Ultra-low gate impedance and 5.3 ns fall time support fast load-step response and reduce output filter size by enabling higher switching frequency.

Storage Controller PSU

AI Accelerator Board

Use Scenario: 5 V or 12 V input to 3.3 V/1.2 V rails powering NVMe SSD controllers and memory buffers.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated or non-isolated buck stages; co-packaged with control FET on same thermal island.

Use Value: Matched R_DS(on) temperature coefficient and SO-8 footprint allow symmetrical thermal coupling, minimizing current imbalance across phases.

Use Scenario: Multi-rail power delivery for PCIe-based AI accelerators requiring independent 0.8 V core, 1.2 V memory, and 3.3 V I/O supplies.

IC Role / Device Role / Timing Role: High-current synchronous FET in stacked-phase buck converters with interleaved gate drive.

Use Value: 100% tested R_G and low Q_oss (22 nC) reduce gate drive uncertainty and output capacitance-related switching loss at 800 kHz–1.2 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 42 nC; SO-8 with enhanced thermal pad.	Slightly lower R_DS(on) but higher Q_g; identical t_rr and E_AS ratings.	Better conduction loss at full load; marginally higher gate drive loss and slightly reduced C_dv/dt immunity.
IPB033N04LG	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 34 nC; TO-263-3 package (not SO-8).	Lower gate charge improves switching efficiency but requires different PCB layout and thermal management.	Preferred for thermally constrained designs where SO-8 thermal resistance is limiting; not drop-in compatible.

Compared with SiR872DP and IPB033N04LG, IRF7831PBF offers the best balance of low gate charge, proven SO-8 thermal performance, and tightly controlled Q_gd/Q_gs1 for reliable operation in high-dV/dt synchronous buck environments.

Availability

IRF7831PBF is available at Aetrix Electronics and suitable for server VRMs, network switch POLs, and AI accelerator board power delivery requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7831PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRF7831PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-frequency DC/DC conversion in computing and networking infrastructure where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current for IRF7831PBF at 70°C ambient?

The maximum continuous drain current is 17 A at T_A = 70 °C with V_GS = 10 V, based on SO-8 package thermal limits and R_DS(on) derating. This assumes adequate PCB copper area (≥1 in² 2 oz copper per drain pad) and still-air conditions. At higher case temperatures or reduced copper, current must be further derated per the linear derating factor of 0.02 W/°C.

Does IRF7831PBF support 4.5 V gate drive in synchronous buck applications?

Yes - IRF7831PBF is fully specified down to V_GS = 4.5 V, with R_DS(on) = 4.4 mΩ max at that drive level. Its low gate threshold (1.35–2.35 V) and ultra-low gate impedance ensure strong enhancement-mode behavior and fast turn-on even with 5 V controller outputs, making it suitable for legacy and modern POL ICs.

How is avalanche ruggedness verified for IRF7831PBF?

Every unit undergoes 100% production testing for single-pulse avalanche energy (E_AS) and avalanche current (I_AR). Test conditions follow JEDEC JESD24-11 using clamped inductive loads at T_J = 25 °C and V_DD = 15 V, with confirmed minimum E_AS = 100 mJ and I_AR = 16 A. No units are shipped without passing this test.

Can IRF7831PBF be used as the high-side (control) FET in a buck converter?

No - IRF7831PBF is optimized as the synchronous (low-side) FET. Its low R_DS(on) and body diode characteristics are tuned for source-grounded operation. As a high-side switch, it would require bootstrap or isolated gate drive, and its Q_gd/Q_gs1 ratio is not optimized for high dV/dt immunity in that configuration. Use dedicated high-side or complementary pairs instead.

IRF7831PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7831PBF FAQ

1.How can I place an order for IRF7831PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7831PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7831PBF reliable?

The price and inventory of IRF7831PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7831PBF is usually 5 days.

3.What payment methods are accepted for IRF7831PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7831PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7831PBF?

IRF7831PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7831PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7831PBF?

For technical support, including IRF7831PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7831PBF requirements.

6.How does Aetrix verify that IRF7831PBF is sourced from the original manufacturer or authorized distributors?

All IRF7831PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7831PBF meets industry standards.

7.What is the process for return or replacement of IRF7831PBF?

All IRF7831PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7831PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7831PBF part is unused and in its original packaging.

Return procedure for IRF7831PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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