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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7831TR

Name: IRF7831TR
Brand: Infineon Technologies
SKU: IRF7831TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7831TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7831TR.pdf

Description:: MOSFET N-CH 30V 21A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,771

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Product details

Overview

IRF7831TR from Infineon Technologies (formerly International Rectifier) is a 30V, N-channel, dual-die SO-8 Power MOSFET optimized as the synchronous FET in high-frequency point-of-load buck converters. It delivers 2.5 mΩ R_DS(on) at V_GS = 10 V, 40 nC total gate charge, and 100% avalanche-tested robustness for networking and computing power stages.

For engineers reviewing the IRF7831TR datasheet, IRF7831TR pinout, IRF7831TR application, or IRF7831TR equivalent, key selection criteria include low Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on, body diode Q_rr = 31–47 nC for light-load efficiency, and SO-8 thermal resistance R_θJA = 50 °C/W for board-level thermal design.

Technical Context

This device implements a planar HEXFET structure with fully characterized unclamped inductive switching (UIS) capability up to 100 mJ at T_J = 25°C. Its gate threshold voltage (1.35–2.35 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −5.7 mV/°C) enable stable current sharing in paralleled configurations.

The SO-8 package integrates two identical N-channel dies sharing source terminals, supporting synchronous rectification where low Q_oss (22 pF) and fast t_rr (42–62 ns) minimize output charge loss and reverse recovery dissipation transferred to the control FET.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in non-isolated DC/DC converters
R_DS(on) max	3.6 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 16 A RMS in high-current POL stages
Q_g typ.	40 nC - Determines gate drive power (P_drive = Q_g × V_g × f) and switching speed in 300–1000 kHz applications
Q_rr	31–47 nC - Directly impacts shoot-through risk and control-FET dissipation during body-diode commutation
R_θJA	50 °C/W - Sets maximum allowable power dissipation (1.6 W at T_A = 70°C) without heatsinking
E_AS	100 mJ - Confirmed single-pulse avalanche energy supports reliable operation under transient overloads

Pinout & Package

IRF7831TR uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The dual-die configuration shares source (S) and gate (G) connections across both channels, with eight pins arranged in standard SOIC layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Common high-side connection for both internal MOSFETs; tied to PCB copper pour for thermal relief
5	Gate (G)	Single gate input controlling both dies; requires low-impedance driver to manage 40 nC total charge
6, 7, 8	Source (S)	Common source node; serves as return path for synchronous rectifier current and reference for gate drive

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.4 mΩ max - Enables efficient operation with 5 V gate drive in controller-based sync-buck designs
Fully characterized avalanche	100% tested E_AS - Eliminates need for external snubbers in inductive load transients
Low Q_gd/Q_gs1 ratio	Q_gd = 11 nC, Q_gs1 = 12 nC - Reduces susceptibility to C_dv/dt induced turn-on at switching node
Lead-free construction	RoHS-compliant Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Server VRM

Network Switch PSU

Use Scenario: 12 V input, 0.8–1.8 V output, 300–600 kHz multiphase buck converter supplying CPU/GPU core power.

IC Role / Device Role / Timing Role: Synchronous rectifier FET handling high RMS current (>30 A per phase) with minimal conduction loss.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 4.5 mΩ devices at 20 A, improving full-load efficiency.

Use Scenario: 48 V to 12 V intermediate bus converter feeding PoE controllers and PHYs in Layer 3 switches.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET operating in continuous conduction mode (CCM) with 500 kHz switching.

Use Value: Low Q_rr (31 nC typ.) minimizes reverse recovery loss transferred to primary-side FET, reducing overall system thermal stress.

AI Accelerator Board

Edge Compute Module

Use Scenario: High-density 3.3 V/5 V point-of-load regulator delivering >50 A to FPGA or ASIC fabric using stacked SO-8 layouts.

IC Role / Device Role / Timing Role: Dual-die configuration enables parallel current sharing without external current-sense resistors.

Use Value: Matched die characteristics ensure balanced current division (<5% mismatch), avoiding thermal runaway in compact layouts.

Use Scenario: Fanless industrial edge compute module requiring silent operation and no heatsinks in ambient up to 70°C.

IC Role / Device Role / Timing Role: Synchronous FET in 1 MHz buck stage powering DDR memory and SoC I/O rails.

Use Value: R_θJA = 50 °C/W allows 1.6 W dissipation at 70°C ambient-sufficient for 15 A peak loads without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 49 nC; SO-8 with enhanced thermal pad	Higher gate charge increases driver loss at >1 MHz; better thermal R_θJA = 42 °C/W	Preferred for thermally constrained 1 MHz+ designs where gate drive loss is secondary to junction temperature rise
IPB036N04LG	R_DS(on) = 3.6 mΩ @ 10 V; Q_g = 32 nC; TO-263-3 package	Larger footprint; higher R_θJA = 55 °C/W but superior R_θJL = 1.2 °C/W to heatsink	Suitable when board space permits discrete heatsinking and lower gate drive power is prioritized over area efficiency

Compared with IRF7831TR, SiR872DP trades 23% higher Q_g for 8% lower R_DS(on) and improved thermal resistance, while IPB036N04LG offers 20% lower Q_g in a larger package with inferior board-level cooling but better heatsink coupling-making IRF7831TR optimal for area-constrained, medium-frequency POLs.

Availability

IRF7831TR is available at Aetrix Electronics and suitable for server VRMs, network switch PSUs, AI accelerator boards, and edge compute modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7831TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF7831TR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center and telecom infrastructure where low R_DS(on), controlled Q_g, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRF7831TR at 70°C ambient?

The IRF7831TR supports 17 A continuous drain current at T_A = 70°C with SO-8 mounting on 1-in² 2-oz copper. This rating assumes no forced airflow and accounts for R_θJA = 50 °C/W and P_D derating above 25°C. Actual current must be validated against board layout, copper area, and thermal vias.

Does IRF7831TR require a gate resistor for stability in synchronous buck operation?

Yes-a 2.2–4.7 Ω gate resistor is recommended between driver output and pin 5 to dampen ringing caused by gate loop inductance and Q_gd feedback. This prevents false turn-on during high dV/dt transitions and ensures clean switching waveforms at frequencies above 300 kHz.

Can IRF7831TR be used in linear regulation mode?

No-it is not characterized for linear-mode operation. The Safe Operating Area (SOA) curve shows limited DC capability (≤1 A at V_DS > 10 V), and sustained linear operation risks thermal runaway due to positive R_DS(on) temperature coefficient above 100°C. It is designed exclusively for switching applications.

How does the body diode's reverse recovery performance affect system efficiency?

The body diode's Q_rr (31–47 nC) directly contributes to power loss in the control FET during dead-time conduction. Higher Q_rr increases voltage overshoot and circulating current, raising control-FET switching loss and EMI. In 500 kHz designs, this can reduce full-load efficiency by 0.4–0.7% versus devices with Q_rr < 25 nC.

IRF7831TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7831TR FAQ

1.How can I place an order for IRF7831TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7831TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7831TR reliable?

The price and inventory of IRF7831TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7831TR is usually 5 days.

3.What payment methods are accepted for IRF7831TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7831TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7831TR?

IRF7831TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7831TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7831TR?

For technical support, including IRF7831TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7831TR requirements.

6.How does Aetrix verify that IRF7831TR is sourced from the original manufacturer or authorized distributors?

All IRF7831TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7831TR meets industry standards.

7.What is the process for return or replacement of IRF7831TR?

All IRF7831TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7831TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7831TR part is unused and in its original packaging.

Return procedure for IRF7831TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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